Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
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- Pages.18-19
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- 2008
Epitaxial growth of in-situ doped polycrystalline 3C-SiC for M/NEMS application
M/NEMS용 in-situ 도핑된 다결정 3C-SiC 박막 성장
- Kim, Kang-San (School of Electrical Eng., University of Ulsan) ;
- Chung, Gwiy-Sang (School of Electrical Eng., University of Ulsan)
- Published : 2008.06.19
Abstract
Polycrystalline(poly) 3C-SiC film is a promising structural material for M/NEMS used in harsh environments, bio and fields. In order to realize poly 3C-SiC based M/NEMS devices, the electrical properties of poly 3C-SiC film have to be optimized. The n-type poly 3C-SiC thin film is deposited by APCVD using HMDS