Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Epitaxial growth of in-situ doped polycrystalline 3C-SiC for M/NEMS application

M/NEMS용 in-situ 도핑된 다결정 3C-SiC 박막 성장

  • 김강산 (울산대학교 전기전자정보시스템공학부) ;
  • 정귀상 (울산대학교 전기전자정보시스템공학부)
  • Published : 2008.06.19
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Abstract

Polycrystalline(poly) 3C-SiC film is a promising structural material for M/NEMS used in harsh environments, bio and fields. In order to realize poly 3C-SiC based M/NEMS devices, the electrical properties of poly 3C-SiC film have to be optimized. The n-type poly 3C-SiC thin film is deposited by APCVD using HMDS$(Si_2(CH_3)_6)$ as single precursor and are in-situ doped using N2. Resistivity values as low as 0.014 $\Omega$cm were achieved. The carrier concentration increased with doping from $3.0819\times10^{17}$ to $2.2994\times10^{19}cm^{-3}$ and electronicmobility increased from 2.433 to 29.299 $cm^2/V{\cdot}s$.

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