• 한국전기전자재료학회논문지
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• 제22권2호
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• pp.107-113
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• 2009

In order to improve air stability, we proposed a new active layer of an organic TFT by synthesizing P3HT/POSS conjugated polymer. P3HT/POSS OTFTs with the various P3HT/POSS volume ratios were fabricated and characterized. With the P3HT/POSS volume ratio of 1:1, we achieved the field-effect mobilities of ${\sim}1.19{\times}10^{-3}\;cm^2/v{\cdot}sec$ in the saturation region and the current on/off ratio of ${\sim}2.51{\times}10^2$. The resulting current on-off ratio was much higher than that of the P3HT-based OTFTs and resulted from the dramatic decrease of the off-current. Since the off-current can be reduced by preventing oxygen in atmosphere from doping the P3HT/POSS active layers, this new active layer shows its ability to avoid oxygen doping in atmosphere. Therefore, the improvement of the air stability can be achieved by employing the P3HT/POSS active layers.

• 전기화학회지
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• 제8권1호
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• pp.24-31
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• 2005

Ion-Shower-Doping장비 및 $PH_/3M_2$혼합 가스를 사용하여 Phosphorous를 ELA방법으로 제조된 Poly-Si에 가속 전압 및 조사량을 변수로 이온 주입하였다. As-implanted된 시편의 결정도는 UV-transmittance spectroscopy를 사용하여 측정하였다. 이 때 UV-transmittance를 이용하여 측정한 값은 Raman spectroscopy를 이용해서 측정한 값과 서로 관련되어 있음을 알았다. 면 저항은 가속전압이 1kV에서 15kV까지 증가함에 따라 감소한다 그러나 가혹한 도핑조건하에서는 가속전압의 증가 시 면 저항이 증가한다. 이는 활성화 열처리 후 치유되지 않은 결함에 의해 전자가 포획되며 이에 따라 전하 운반자의 농도가 감소하는 때문이다. 활성화 열처리는 로열처리, RTA 열처리, ELA 열처리 등의 방법으로 수행하였고 열처리 방법에 따르는 도펀트의 활성화 및 결함의 회복의 거동을 연구하였다

• 한국전기전자재료학회논문지
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• 제26권4호
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• pp.284-288
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• 2013

Power MOSFETs(Metal Oxide Semiconductor Field Effect Transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device during switch-on state, it is essential to increase its conductance. We have experimental results and explanations on the doping profile dependence of the electrical behavior of the vertical MOSFET. The device is fabricated as $8.25{\mu}m$ cell pitch and $4.25{\mu}m$ gate width. The performances of device with various p base doping concentration are compared at Vth from 1.77 V to 4.13 V. Also the effect of the cell structure on the on-resistance and breakdown voltage of the device are analyzed. The simulation results suggest that the device optimized for various applications can be further optimized at power device.

• 한국수소및신에너지학회논문집
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• 제33권1호
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• pp.105-112
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• 2022

Copper (Cu)-based catalysts have been widely used in a methanol steam reforming (MSR) reaction for hydrogen production for air-independent propulsion (AIP) applications and their good catalytic activities have attracted much attention. However, the agglomeration of the catalytic active site Cu causes deteriorating the catalytic performance and suppression of Cu agglomeration is a crucial issue in the AIP applications that the MSR system is typically operated at 250-300℃ for a long time. R. Sakai et al. recently showed a computational study on the anchoring effect that reduces an agglomeration of active sites by doping in a supporter. In order to present the anchoring effect on 𝛾-Al₂O₃ supported Cu-based catalysts, in this study, the adsorption energies of Cu on X-doped (X=ruthenium, phosphorus, silicon) 𝛾-Al₂O₃ were calculated and Cu adsorption energy decreased due to a change of the electronic structure originated from doping, thereby proving the anchoring effect.

• 한국전기전자재료학회논문지
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• 제27권5호
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• pp.292-296
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• 2014

We investigated the effect of Ta doping on the dielectric and piezoelectric properties of lead-free $(K_{0.5}Na_{0.5})NbO_3$ ceramics prepared using a conventional ceramic processing. X-ray diffraction analysis revealed that Ta was perfectly substituted into Nb-sites in the range of 0 to 20 at%. As Ta content in the KNN increased, the sinterability of KNN ceramics was significantly degraded while the Ta doping enhanced the piezoelectric constant $d_{33}$, planar mode piezoelectric coupling coefficient ($k_p$), and electromechanical quality factor ($Q_m$). The highest values for $d_{33}$, $k_p$, and $Q_m$ was found to be 156 pC/N, 0.37, and 155, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.192-198
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• 2017

In this paper, we propose a novel double gate vertical channel tunneling field effect transistor (DVTFET) with a dielectric sidewall and optimization characteristics. The dielectric sidewall is applied to the gate region to reduced ambipolar voltage ($V_{amb}$) and double gate structure is applied to improve on-current ($I_{ON}$) and subthreshold swing (SS). We discussed the fin width ($W_S$), body doping concentration, sidewall width ($W_{side}$), drain and gate underlap distance ($X_d$), source doping distance ($X_S$) and pocket doping length ($X_P$) of DVTFET. Each of device performance is investigated with various device parameter variations. To maximize device performance, we apply the optimum values obtained in the above discussion of a optimization simulation. The optimum results are steep SS of 32.6 mV/dec, high $I_{ON}$ of $1.2{\times}10^{-3}A/{\mu}m$ and low $V_{amb}$ of -2.0 V.

• Carbon letters
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• 제9권2호
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• pp.131-136
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• 2008

In order to investigate the effect of doping C, N, B and F elements on $TiO_2$ for reducing the band gap, the heat treatment of $TiO_2$ was carried out with tetraethylammonium tetrafluoroborate. Through XRD and XPS analysis, the C, N, B and F doped anatase $TiO_2$ was confirmed. According to the increase of temperature during treatment, the particle size was increased due to aggregation of $TiO_2$ with elements (B, C, N and F). To investigate the capacity of photocatalyst for degradation of dye under solar light, the degradation of acridine orange and methylene blue was conducted. The degradation of dyes was carried out successfully under solar light indicating the effect of doping elements (B, C, N and F) on $TiO_2$ for reducing the band gap effectively.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.285-296
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• 2005

Reduced pressure chemical vapor deposition technology has been used to study SiGe heterostructure epitaxy and device issues, including SiGe relaxed buffers, proper control of Ge component and crystalline defects, two dimensional delta doping, and their influence on electrical properties of devices. From experiments, 2D profiles of B and P presented FWHM of 5 nm and 20 nm, respectively, and doses in 5×10/sup 11/ ∼ 3×10/sup 14/ ㎝/sup -2/ range. The results could be employed to fabricate SiGe/Si heterostructure field effect transistors with both Schottky contact and MOS structure for gate electrodes. I-V characteristics of 2D P-doped HFETs revealed normal behavior except the detrimental effect of crystalline defects created at SiGe/Si interfaces due to stress relaxation. On the contrary, sharp B-doping technology resulted in significant improvement in DC performance by 20-30 ％ in transconductance and short channel effect of SiGe HMOS. High peak concentration and mobility in 2D-doped SiGe heterostructures accompanied by remarkable improvements of electrical property illustrate feasible use for nano-sale FETs and integrated circuits for radio frequency wireless communication in particular.

• 한국재료학회지
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• 제18권5호
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• pp.272-276
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• 2008

In submicron MOSFET devices, maintaining the ratio between the channel length (L) and the channel depth (D) at 3 : 1 or larger is known to be critical in preventing deleterious short-channel effects. In this study, n-type SOI-MOSFETs with a channel length of $0.1\;{\mu}m$ and a Si film thickness (channel depth) of $0.033\;{\mu}m$ (L : D = 3 : 1) were virtually fabricated using a TSUPREM-4 process simulator. To form functioning transistors on the very thin Si film, a protective layer of $0.08\;{\mu}m$-thick surface oxide was deposited prior to the source/drain ion implantation so as to dampen the speed of the incoming As ions. The p-type boron doping concentration of the Si film, in which the device channel is formed, was used as the key variable in the process simulation. The finished devices were electrically tested with a Medici device simulator. The result showed that, for a given channel doping concentration of $1.9{\sim}2.5\;{\times}\;10^{18}\;cm^{-3}$, the threshold voltage was $0.5{\sim}0.7\;V$, and the subthreshold swing was $70{\sim}80\;mV/dec$. These value ranges are all fairly reasonable and should form a 'magic region' in which SOI-MOSFETs run optimally.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.485-487
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• 2008

By the oxygen plasma exposure to the organic light-emitting diodes, the turn-on voltage decreased from 10.5 to 7 V and luminance increased from 470 to $852\;cd/m^2$. Synchrotron radiation photoelectron spectroscopy results showed that during oxygen plasma exposure, oxygen ions were diffused into organic layer and induced p-type doping effect.