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http://dx.doi.org/10.5229/JKES.2005.8.1.024

The Effect of Annealing Methods on Dopant Activation and Damage Recovery of Phosphorous ion Shower Doped Poly-Si  

Kim, Dong-Min (Department of Materials Science and Engineering, Hongik University)
Ro, Jae-Sang (Department of Materials Science and Engineering, Hongik University)
Lee, Ki-Yong (Samsung SDI CO., LTD.,)
Publication Information
Journal of the Korean Electrochemical Society / v.8, no.1, 2005 , pp. 24-31 More about this Journal
Abstract
Ion shower doping with a main ion source of $P_2H_x$ using a source gas mixture of $PH_3/H_2$ was conducted on excimer-laser-annealed (ELA) poly-Si.The crystallinity of the as-implanted samples was measured using a UV-transmittance. The measured value using UV-transmittance was found to correlate well with the one measured using Raman Spectroscopy. The sheet resistance decreases as the acceleration voltage increases from 1kV to 15kV at the moderate doping conditions. It, however, increases as the acceleration voltage increases under the severe doping conditions. The reduction in carrier concentration due to electron trapping at uncured damage after activation annealing seems to be responsible for the rise in sheet resistance. Three different annealing methods were investigated in terms of dopant-activation and damage-recovery, such as furnace annealing, excimer laser annealing, and rapid thermal annealing, respectively.
Keywords
Ion shower doping; Poly-Si; TFT; Dopant Damage.;
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