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http://dx.doi.org/10.4313/JKEM.2005.18.4.285

Development of SiGe Heterostructure Epitaxial Growth and Device Fabrication Technology using Reduced Pressure Chemical Vapor Deposition  

Shim, K.H (전북대학교 반도체물성연구소 반도체과학기술학과)
Kim, S.H (한국전자통신연구원 기반기술연구소)
Song, Y.J (한국전자통신연구원 기반기술연구소)
Lee, N.E (성균관대학교 재료공학과)
Lim, J.W (한국전자통신연구원 기반기술연구소)
Kang, J.Y (한국전자통신연구원 기반기술연구소)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.4, 2005 , pp. 285-296 More about this Journal
Abstract
Reduced pressure chemical vapor deposition technology has been used to study SiGe heterostructure epitaxy and device issues, including SiGe relaxed buffers, proper control of Ge component and crystalline defects, two dimensional delta doping, and their influence on electrical properties of devices. From experiments, 2D profiles of B and P presented FWHM of 5 nm and 20 nm, respectively, and doses in 5×10/sup 11/ ∼ 3×10/sup 14/ ㎝/sup -2/ range. The results could be employed to fabricate SiGe/Si heterostructure field effect transistors with both Schottky contact and MOS structure for gate electrodes. I-V characteristics of 2D P-doped HFETs revealed normal behavior except the detrimental effect of crystalline defects created at SiGe/Si interfaces due to stress relaxation. On the contrary, sharp B-doping technology resulted in significant improvement in DC performance by 20-30 ％ in transconductance and short channel effect of SiGe HMOS. High peak concentration and mobility in 2D-doped SiGe heterostructures accompanied by remarkable improvements of electrical property illustrate feasible use for nano-sale FETs and integrated circuits for radio frequency wireless communication in particular.
Keywords
$\delta$-Doping; Reduced pressure chemical vapor deposition; SiGe; HMOS; RF-CMOS;
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