• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.12
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• pp.53-60
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• 2005

This work proposes a 10b 100 MS/s $1.4\;mm^2$ CMOS ADC for low-power multimedia applications. The proposed two-step pipeline ADC minimizes chip area and power dissipation at the target resolution and sampling rate. The wide-band SHA employs a gate-bootstrapping circuit to handle both single-ended and differential inputs with 1.2 Vp-p at 10b accuracy while the second-stage flash ADC employs open-loop offset sampling techniques to achieve 6b resolution. A 3-D fully symmetrical layout reduces the capacitor and device mismatch of the first-stage MDAC. The low-noise references are integrated on chip with optional off-chip voltage references. The prototype 10b ADC implemented in a 0.18 um CMOS shows the maximum measured DNL and INL of 0.59 LSB and 0.77 LSB, respectively. The ADC demonstrates the SNDR of 54 dB, the SFDR of 62 dB, and the power dissipation of 56 mW at 100 MS/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.10
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• pp.70-78
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• 2009

This paper addresses the analysis and the design optimization of differential interconnects for high-speed Low-Voltage Differential Signaling (LVDS) applications. Thanks to the differential transmission and the low voltage swing, LVDS offers high data rates and improved noise immunity with significantly reduced power consumption in data communications, high-resolution display, and flat panel display. We present an improved model and new equations to reduce impedance mismatch and signal degradation in cascaded interconnects using optimization of interconnect design parameters such as trace width, trace height and trace space in differential printed circuit board (FPCB) transmission lines. We have carried out frequency-domain full-wave electromagnetic simulations, and time-domain transient simulations to evaluate the high-frequency characteristics of the differential FPCB interconnects. We believe that the proposed approach is very helpful to optimize high-speed differential FPCB interconnects for LVDS applications.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.761-764
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• 2007

This paper addresses the analysis and the design optimization of differential interconnects for Low-Voltage Differential Signaling (LVDS) applications. Thanks to the differential transmission and the low voltage swing, LVDS offers high data rates and improved noise immunity with significantly reduced power consumption in data communications, high-resolution display, and flat panel display. We present an improved model and new equations to reduce impedance mismatch and signal degradation in cascaded interconnects using optimization of interconnect design parameters such as trace width, trace height and πace space in differential flexible printed circuit board (FPCB) transmission lines. We have carried out frequency-domain full-wave electromagnetic simulations, time-domain transient simulations, and S-parameter simulations to evaluate the high-frequency characteristics of the differential FPCB interconnects.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.1
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• pp.137-147
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• 2013

In this paper, an 1.2V 8b 1GS/s A/D Converter(ADC) based on a folding architecture with a resistive interpolation technique is described. In order to overcome the asymmetrical boundary-condition error of conventional folding ADCs, a novel scheme with an odd number of folding blocks and a fractional folding rate are proposed. Further, a new digital encoding technique with an arithmetic adder is described to implement the proposed fractional folding technique. The proposed ADC employs an iterating offset self-calibration technique and a digital error correction circuit to minimize device mismatch and external noise The chip has been fabricated with a 1.2V 0.13um 1-poly 6-metal CMOS technology. The effective chip area is $2.1mm^2$ (ADC core : $1.4mm^2$, calibration engine : $0.7mm^2$) and the power dissipation is about 350mW including calibration engine at 1.2V power supply. The measured result of SNDR is 46.22dB, when Fin = 10MHz at Fs = 1GHz. Both the INL and DNL are within 1LSB with the self-calibration circuit.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.5 s.347
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• pp.54-63
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• 2006

This work proposes a 14b 100MS/s 0.18um CMOS ADC with optimized resolution, conversion speed, die area, and power dissipation to obtain the performance required in the fourth-generation mobile communication systems. The 3-stage pipeline ADC, whose optimized architecture is analyzed and verified with behavioral model simulations, employs a wide-band low-noise SHA to achieve a 14b level ENOB at the Nyquist input frequency, 3-D fully symmetric layout techniques to minimize capacitor mismatch in two MDACs, and a back-end 6b flash ADC based on open-loop offset sampling and interpolation to obtain 6b accuracy and small chip area at 100MS/s. The prototype ADC implemented in a 0.18um CMOS process shows the measured DNL and INL of maximum 1.03LSB and 5.47LSB, respectively. The ADC demonstrates a maximum SNDR and SFDR of 59dB and 72dB, respectively, and a power consumption of 145mW at 100MS/s and 1.8V. The occupied active die area is $3.4mm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.37-47
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• 2006

This work proposes a 10b 25MS/s $0.8mm^2$ 4.8mW 0.13um CMOS A/D Converter (ADC) for high-performance wireless communication systems such as DVB, DAB and DMB simultaneously requiring low voltage, low power, and small area. A two-stage pipeline architecture minimizes the overall chip area and power dissipation of the proposed ADC at the target resolution and sampling rate while switched-bias power reduction techniques reduce the power consumption of analog amplifiers. A low-power sample-and-hold amplifier maintains 10b resolution for input frequencies up to 60MHz based on a single-stage amplifier and nominal CMOS sampling switches using low threshold-voltage transistors. A signal insensitive 3-D fully symmetric layout reduces the capacitor and device mismatch of a multiplying D/A converter while low-noise reference currents and voltages are implemented on chip with optional off-chip voltage references. The employed down-sampling clock signal selects the sampling rate of 25MS/s or 10MS/s with a reduced power depending on applications. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates the measured DNL and INL within 0.42LSB and 0.91LSB and shows a maximum SNDR and SFDR of 56dB and 65dB at all sampling frequencies up to 2SMS/s, respectively. The ADC with an active die area if $0.8mm^2$ consumes 4.8mW at 25MS/s and 2.4mW at 10MS/s at a 1.2V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.48-57
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• 2006

This work describes a 12b 200KHz 0.52mA $0.47mm^2$ algorithmic ADC for sensor applications such as motor controls, 3-phase power controls, and CMOS image sensors simultaneously requiring ultra-low power and small size. The proposed ADC is based on the conventional algorithmic architecture with recycling techniques to optimize sampling rate, resolution, chip area, and power consumption. The input SHA with eight input channels for high integration employs a folded-cascode architecture to achieve a required DC gain and a sufficient phase margin. A signal insensitive 3-D fully symmetrical layout with critical signal lines shielded reduces the capacitor and device mismatch of the MDAC. The improved switched bias power-reduction techniques reduce the power consumption of analog amplifiers. Current and voltage references are integrated on the chip with optional off-chip voltage references for low glitch noise. The employed down-sampling clock signal selects the sampling rate of 200KS/s or 10KS/s with a reduced power depending on applications. The prototype ADC in a 0.18um n-well 1P6M CMOS technology demonstrates the measured DNL and INL within 0.76LSB and 2.47LSB. The ADC shows a maximum SNDR and SFDR of 55dB and 70dB at all sampling frequencies up to 200KS/s, respectively. The active die area is $0.47mm^2$ and the chip consumes 0.94mW at 200KS/s and 0.63mW at 10KS/s at a 1.8V supply.

• Journal of the Institute of Convergence Signal Processing
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• v.14 no.2
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• pp.136-146
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• 2013

In this paper, the residual delay compensation algorithm is proposed for FX-type KJJVC. In case of initial version as that design algorithm of KJJVC, the integer calculation and the cos/sin table for the phase compensation coefficient were introduced in order to speed up of calculation. The mismatch between data timing and residual delay phase and also between bit-jump and residual delay phase were found and fixed. In final design of KJJVC residual delay compensation algorithm, the initialization problem on the rotation memory of residual delay compensation was found when the residual delay compensated value was applied to FFT-segment, and this problem is also fixed by modifying the FPGA code. Using the proposed residual delay compensation algorithm, the band shape of cross power spectrum becomes flat, which means there is no significant loss over the whole bandwidth. To verify the effectiveness of proposed residual delay compensation algorithm, we conducted the correlation experiments for real observation data using the simulator and KJJVC. We confirmed that the designed residual delay compensation algorithm is well applied in KJJVC, and the signal to noise ratio increases by about 8%.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.5
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• pp.879-886
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• 2008

This paper addresses the analysis and the design optimization of differential interconnects for Low-Voltage Differential Signaling (LVDS) applications. Thanks to the differential transmission and the low voltage swing, LVDS offers high data rates and improved noise immunity with significantly reduced power consumption in data communications, high-resolution display, and flat panel display. We present an improved model and new equations to reduce impedance mismatch and signal degradation in cascaded interconnects using optimization of interconnect design parameters such as trace width, trace height and trace space in differential flexible printed circuit board (FPCB) transmission lines. We have carried out frequency-domain full-wave electromagnetic simulations, time-domain transient simulations, and S-parameter simulations to evaluate the high-frequency characteristics of the differential FPCB interconnects. The 10% change in trace width produced change of approximately 6% and 5.6% in differential impedance for trace thickness of $17.5{\mu}m$ and $35{\mu}m$, respectively. The change in the trace space showed a little change. We believe that the proposed approach is very helpful to optimize high-speed differential FPCB interconnects for LVDS applications.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.58-68
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• 2006

This work proposes a 10b 250MS/s $1.8mm^2$ 85mW 0.13um CMOS A/D Converter (ADC) for high-performance integrated systems such as next-generation DTV and WLAN simultaneously requiring low voltage, low power, and small area at high speed. The proposed 3-stage pipeline ADC minimizes chip area and power dissipation at the target resolution and sampling rate. The input SHA maintains 10b resolution with either gate-bootstrapped sampling switches or nominal CMOS sampling switches. The SHA and two MDACs based on a conventional 2-stage amplifier employ optimized trans-conductance ratios of two amplifier stages to achieve the required DC gain, bandwidth, and phase margin. The proposed signal insensitive 3-D fully symmetric capacitor layout reduces the device mismatch of two MDACs. The low-noise on-chip current and voltage references can choose optional off-chip voltage references. The prototype ADC is implemented in a 0.13um 1P8M CMOS process. The measured DNL and INL are within 0.24LSB and 0.35LSB while the ADC shows a maximum SNDR of 54dB and 48dB and a maximum SFDR of 67dB and 61dB at 200MS/s and 250MS/s, respectively. The ADC with an active die area of $1.8mm^2$ consumes 85mW at 250MS/s at a 1.2V supply.