• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.8
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• pp.573-579
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• 2009

A thermal mass air flow sensor, which consists of a micro-heater and thermal sensors on the silicon-nitride thin membrane structure, is micro-fabricated by MEMS processes. Three thermo-resistive sensors, one for the measurement of microheater temperature, the others for the measurement of membrane temperature upstream and downstream of the micro-heater respectively, are used. The micro-heater is operated under the constant temperature difference mode via a real time controller, based on inlet air temperature. Two design models for microfabricated flow sensor are compared with experimental results and confirmed their applicabilities and limitations. The thermal characteristics are measured to find the best flow indicator. It is found that two normalized temperature indicators can be adopted with some advantages in practice. The flow sensor with this control mode can be adopted for wide capability of high speed and sensitivity in the very low and medium velocity ranges.

• Journal of the Korean Magnetics Society
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• v.8 no.3
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• pp.138-143
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• 1998

We have investigated the magnetic properties of FeBN and FeSiN films deposited by RF magnetron reactive sputtering system. It was investigated that the compositions of B, Si and N were the main factors influencing the soft magnetic properties and film resistivity. The addition of small amount of N significantly improve the soft magnetic properties and electrical resistivity. The FeBN and FeSiN films were showed good soft magnetic properties which were Hc<1 Oe, Bs:19~19 kG and $\mu$'>1000 values. The composition of films were $Fe_{75}(BN)_{25},\;Fe_{78}(SiN)_{22}$ and resistivity was 100~120 $\mu$$\Omega$-cm. but, futher increase in B, Si and N concentration degraded the soft magnetic properties due to formation of nitride such as $Fe_4N$ compound.

• Journal of Magnetics
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• v.22 no.2
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• pp.244-249
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• 2017

To get deeper insight into the effect of intergranular additives in sintered Nd-Fe-B magnet and consequently improve the properties better, the interaction between additives (oxide, nitride, and carbide) and Nd-rich phase in the temperature range of 298.15-1400 K was analyzed thermodynamically. It can be found that the oxide additives became less stable than nitrides and carbides. Except for calcium oxide, almost all oxides could react with Nd from Nd-rich phase. To be different from oxide additives, the mechanism of nitrides and carbides was defined with various elements, either reaction with Nd from Nd-rich phase or not. The two different mechanisms would show different effects on the microstructure and hence properties of magnet. The thermodynamic analysis had a better agreement with the experimental information.

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.7-11
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• 2015

In order to protect the patterned mask from contamination during lithography process, pellicle has become a critical component for Extreme Ultraviolet (EUV) lithography technology. According to EUV pellicle requirements, the pellicle should have high EUV transmittance and robust mechanical property. In this study, silicon nitride, which is well-known for its remarkable mechanical property, was used as a pellicle membrane material to achieve high EUV transmittance. Since long silicon wet etching process time aggravates notching effect causing stress concentration on the edge or corner of etched structure, the remaining membrane is prone to fracture at the end of etch process. To overcome this notching effect and attain high transmittance, we began preparing a rather thick (200 nm) $SiN_x$ membrane which can be stably manufactured and was thinned into 43 nm thickness with HF wet etching process. The measured EUV transmittance shows similar values to the simulated result. Therefore, the result shows possibilities of HF thinning processes for $SiN_x$ EUV pellicle fabrication.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.7-11
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• 2012

SiNx films have been wildly used as anti-reflection coatings and passivation for crystalline silicon solar cells. In this study, the SiNx films were deposited by using high frequency (13.56MHz) PECVD and optical & passivation properties were investigated. The RF power was changed in a certain range for the film deposition. Then, the refractive index, etch rate, minority carrier lifetime and cell efficiency were measured to study the properties of the film respectively. The optimal deposition conditions for application to crystalline silicon solar cells were proposed as results of the study. Finally, the best cell efficiency of 16.98% was obtained from the solar cell with the SiNx films deposited by RF power of 550W.

• ETRI Journal
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• v.38 no.1
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• pp.133-140
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• 2016

This paper presents a method of parasitic inductance reduction for high-speed switching and high-efficiency operation of a cascode structure with a low-voltage enhancement-mode silicon (Si) metal-oxide-semiconductor field-effect transistor (MOSFET) and a high-voltage depletion-mode gallium nitride (GaN) fielde-ffect transistor (FET). The method is proposed to add a bonding wire interconnected between the source electrode of the Si MOSFET and the gate electrode of the GaN FET in a conventional cascode structure package to reduce the most critical inductance, which provides the major switching loss for a high switching speed and high efficiency. From the measured results of the proposed and conventional GaN cascode FETs, the rising and falling times of the proposed GaN cascode FET were up to 3.4% and 8.0% faster than those of the conventional GaN cascode FET, respectively, under measurement conditions of 30 V and 5 A. During the rising and falling times, the energy losses of the proposed GaN cascode FET were up to 0.3% and 6.7% lower than those of the conventional GaN cascode FET, respectively.

• ETRI Journal
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• v.29 no.5
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• pp.667-669
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• 2007

This letter presents a smart integrated microfluidic device which can be applied to actively immobilize proteins on demand. The active component in the device is a temperature-controllable microelectrode array with a smart polymer film, poly(N-isopropylacrylamide) (PNIPAAm) which can be thermally switched between hydrophilic and hydrophobic states. It is integrated into a micro hot diaphragm having an integrated micro heater and temperature sensors on a 2-micrometer-thick silicon oxide/silicon nitride/silicon oxide (O/N/O) template. Only 36 mW is required to heat the large template area of 2 mm${\times}$16 mm to $40^{\circ}C$ within 1 second. To relay the stimulus-response activity to the microelectrode surface, the interface is modified with a smart polymer. For a model biomolecular affinity test, an anti-6-(2, 4-dinitrophenyl) aminohexanoic acid (DNP) antibody protein immobilization on the microelectrodes is demonstrated by fluorescence patterns.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.3
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• pp.130-136
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• 1989

Electrical transport and thermally induced metastability in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) using boron-doped amorphous silicon as an active layer have been studied. The device characteristics n-channel and p-channel operations. The thermal quenching experiments on amorphous silicon-silicon nitride ambipolar TFT give clear evidence for the co-existence of two distinct metastable changes. The densities of metastable active dopants and dangling bonds increase with the quenching temperature. On the other hand, the interface state density appears to decrease with increasing quenching temperature.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.34-39
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• 2014

This paper discusses the 3-level charge pumping (CP) method in planar-type Silicon-Oxide-High-k-Oxide-Silicon (SOHOS) and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) devices to find out the reason of the degradation of data retention properties. In the CP technique, pulses are applied to the gate of the MOSFET which alternately fill the traps with electrons and holes, thereby causing a recombination current Icp to flow in the substrate. The 3-level charge pumping method may be used to determine not only interface trap densities but also capture cross sections as a function of trap energy. By applying this method, SOHOS device found to have a higher interface trap density than SONOS device. Therefore, degradation of data retention characteristics is attributed to the many interface trap sites.

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.273-277
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• 2007

Vertically aligned Zinc Oxide rod arrays were grown by the self-assembly hydrothermal process on the GaN epitaxial layer which has a same lattice structure with ZnO. Zinc nitrate and DETA solutions are used in the hydrothermal process. The $(HfO_2)$ thin film was deposited on GaN and the patterning was made by the photolithography technique. The selective growth of ZnO rod was achieved with the patterned GaN substrate. The fabricated ZnO rods are single crystal, and have grown along hexagonal c-axis direction of (002) which is the same growth orientation of GaN epitaxial layer. The density and the size of ZnO rod can be controlled by the pattern. The optical property of ordered array of vertical ZnO rods will be discussed in the present work.