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A Study on Silicon Nitride Films by high frequency PECVD for Crystalline Silicon Solar Cells  

Kim, Jeong-Hwan (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education)
Roh, Si-Cheol (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education)
Choi, Jeong-Ho (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education)
Jung, Jong-Dae (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education)
Seo, Hwa-Il (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education)
Publication Information
Journal of the Semiconductor & Display Technology / v.11, no.2, 2012 , pp. 7-11 More about this Journal
Abstract
SiNx films have been wildly used as anti-reflection coatings and passivation for crystalline silicon solar cells. In this study, the SiNx films were deposited by using high frequency (13.56MHz) PECVD and optical & passivation properties were investigated. The RF power was changed in a certain range for the film deposition. Then, the refractive index, etch rate, minority carrier lifetime and cell efficiency were measured to study the properties of the film respectively. The optimal deposition conditions for application to crystalline silicon solar cells were proposed as results of the study. Finally, the best cell efficiency of 16.98% was obtained from the solar cell with the SiNx films deposited by RF power of 550W.
Keywords
High frequency PECVD; SiNx; Refractive index; Etch rate; Minority carrier lifetime;
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