• Korean Journal of Metals and Materials
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• v.49 no.10
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• pp.818-822
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• 2011

ZnO nanorods were grown on Au-coated Si substrates by vapor phase transport (VPT) at the growth temperature of $600^{\circ}C$ using a mixture of zinc oxide and graphite powders as source material. Au thin films with the thickness of 5 nm were deposited by ion sputtering. Temperature-dependent photoluminescence (PL) was carried out to investigate the optical properties of the ZnO nanorods. Five peaks at 3.363, 3.327, 3.296, 3.228, and 3.143 eV, corresponding to the free exciton (FX), neutral donor bound exciton ($D^{\circ}X$), first order longitudinal optical phonon replica of free exciton (FX-1LO), FX-2LO, and FX-3LO emissions, were obtained at low-temperature (10 K). The intensity of these peaks decreased and their position was red shifted with the increase in the temperature. The FX emission peak energy of the ZnO nanorods exhibited an anomalous behavior (red-blue-red shift) with the increase in temperature. This is also known as an "S-shaped" emission shift. The thermal activation energy for the exciton with increasing temperature in the ZnO nanorods is found to be about 26.6 meV; the values of Varshni's empirical equation fitting parameters are = $5{\times}10^{-4}eV/K$, ${\beta}=350K$, and $E_g(0)=3.364eV$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.55.1-55.1
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• 2009

나노 임프린트 리소그래피 기술은 고집적된 나노 구조물을 경제적으로 형성시킬 수 있는 유망한 차세대 리소그래피 기술 중 하나로써 광학 소자 뿐만 아니라 반도체, 디스플레이, 바이오 소자 등 다양한 분야에 적용이 가능하다. 본 연구에서는 태양전지 보호층으로 사용되는 유리 기판의 투과도 향상을 위해 나노 크기의 패턴을 형성하여 표면 반사를 최소화 하였으며, 보호층의 유지보수 부담을 줄이기 위해 패턴 표면에 방오 기능을 갖는 hydrophobic SAM(Self Assembled Mono-layer)을 형성하였다. 또한, SAM coated nano-sized pattern 형성을 위해 사용 된 $SiO_2$ 증착층과 SAM이 투과도에 끼치는 영향을 확인하기 위하여 bare glass, $SiO_2$ deposited glass, SAM coated glass 그리고 SAM/$SiO_2$ coated glass를 제작하였으며, 각각의 투과도를 측정하여 비교 분석 하였다. 투과도를 측정하기 위해 UV-Vis spectrophotometer를 사용하였으며, 방오 기능을 측정하기 위해 접촉각 측정장치를 사용하였다. 접촉각의 측정을 통해 이형처리(SAM coating)를 한 기판 표면이 소수성으로 바뀌어 물이나 먼지가 잘 묻지 않게 되는 것을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.222-223
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• 2006

고전압 전기기기의 열화는 여러 가지 요인에 의해 발생한다. 따라서 여러 환경 요인에 영향을 비교적 적게 맡는 절연재료 개발에 의한 절연성능 항상은 그동안 많은 연구자들의 관심의 대상이 되어왔다. 최근 고분자 수지 내에 나노 크기의 충진제를 혼합하여 절연성능 및 기계적, 열적 특성을 향상시키는 연구가 점차 활성화되고 있다. 그러나 나노 크기 입자의 활용은 분자단위 크기의 입자가 가지는 Van der Waals력의 문제로 인하여 전기기기의 절연재료로 활용하기에는 어려운 점이 나타나고 있다. 본 논문에서는 에폭시/$SiO_2$ 나노복합재료를 제조하여 분산시간에 따른 입자의 문산 상태를 살펴보았다.

• The Journal of Advanced Prosthodontics
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• v.10 no.1
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• pp.43-49
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• 2018

PURPOSE. The purpose of this in vitro study is to examine the effects of a nano-structured alumina coating on the adhesion between resin cements and zirconia ceramics using a four-point bending test. MATERIALS AND METHODS. 100 pairs of zirconium bar specimens were prepared with dimensions of $25mm{\times}2mm{\times}5mm$ and cementation surfaces of $5mm{\times}2mm$. The samples were divided into 5 groups of 20 pairs each. The groups are as follows: Group I (C) - Control with no surface modification, Group II (APA) - airborne-particle-abrasion with $110{\mu}m$ high-purity aluminum oxide ($Al_2O_3$) particles, Group III (ROC) - airborne-particle-abrasion with $110{\mu}m$ silica modified aluminum oxide ($Al_2O_3+SiO_2$) particles, Group IV (TCS) - tribochemical silica coated with $Al_2O_3$ particles, and Group V (AlC) - nano alumina coating. The surface modifications were assessed on two samples selected from each group by atomic force microscopy and scanning electron microscopy. The samples were cemented with two different self-adhesive resin cements. The bending bond strength was evaluated by mechanical testing. RESULTS. According to the ANOVA results, surface treatments, different cement types, and their interactions were statistically significant (P<.05). The highest flexural bond strengths were obtained in nano-structured alumina coated zirconia surfaces (50.4 MPa) and the lowest values were obtained in the control group (12.00 MPa), both of which were cemented using a self-adhesive resin cement. CONCLUSION. The surface modifications tested in the current study affected the surface roughness and flexural bond strength of zirconia. The nano alumina coating method significantly increased the flexural bond strength of zirconia ceramics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.387-387
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• 2009

In the study the volume resistivity Characteristics of epoxy resin using nanocomposites, nano-comosites are made from insulating material epoxy resin using for power transformer equipment and molding several devices as changing amount of addition of diameter 12 [nm] $SiO_2$, we measured volume resistivity of nano-composites by High Resistance Meter(4329A). As the result of measurement, we have seen the epoxy resin using 1.6 [wt%] nanocomposites was the highest measured at the volume resistivity, and using 0.4 [wt%] nanocomposites was highest stabilized than others according to variable temperature properties.

• Journal of Electrochemical Science and Technology
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• v.12 no.2
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• pp.217-224
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• 2021

In this study, Monte Carlo (MC) simulation is conducted with recurrence relation to study the effect of SiO₂ with different particle size and their roles in enhancing the ionic conductivity and lithium transference number of PMMA composite polymer electrolytes (CPEs). The MC simulated ionic conductivity is verified with the measurements from Electrochemical Impedance Spectroscopy (EIS). Then, the lithium transference number of CPEs is calculated using recurrence relation with the MC simulated current density and the reference transference number obtained. Incorporation of micron-size SiO₂ (≤10 ㎛) fillers into the mixture improves the ionic conductivity from 8.60×10^-5 S/cm to 2.35×10^-4 S/cm. The improvement is also observed on the lithium transference number, where it increases from 0.088 to 0.3757. Furthermore, the addition of nano-sized SiO₂ (≤12 nm) fillers further increases the ionic conductivity up towards 3.79×10^-4 S/cm and lithium transference number of 0.4105. The large effective surface area of SiO₂ fillers is responsible for the improvement in ionic conductivity and the transference number in PMMA composite polymer electrolytes.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• New Physics: Sae Mulli
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• v.68 no.11
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• pp.1196-1202
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• 2018

$Li_2Sr_{1-x}Eu_xSiO_{4-{\alpha}}N_{\alpha}$ ($Li_2SrSiO_{4-{\alpha}}N_{\alpha}:Eu^{2+}$) phosphors were synthesized by using a solid state reaction (SSR) method with submicron $Si_3N_4$ and nano $Si_3N_4$ powders as the sources of Si and N, and the optical properties of those phosphors were studied. The studied phosphors showed efficient excitation characteristics over the broad range from 230 to 530 nm. Also, They showed broad emission spectra covering a range from 500 to 700 nm, with a peak at 568 nm, which was shifted longer wavelength by 18 nm as compared with that of commercial $YAG:Ce^{3+}$. Combined with a 450 nm blue LED chip, the results support the application of the $Li_2SrSiO_{4-{\alpha}}N_{\alpha}:Eu^{2+}$ phosphor as a luminescent material for a white-light source thaat is warmer than the commercial $YAG:Ce^{3+}$ white-light source. In addition, the $Li_2SrSiO_{4-{\alpha}}N_{\alpha}$ phosphors prepared from a submicron $Si_3N_4$ powder was found to emit a previously unreported self-activated luminescence in $Li_2SrSiO_{4-{\alpha}}N_{\alpha}$.

• Current Applied Physics
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• v.18 no.12
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• pp.1546-1552
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• 2018

The polymer nanocomposite as a gate dielectric film was prepared via sol-gel method. The formation of crosslinked structure among nanofillers and polymer matrix was proved by Fourier transform infrared spectroscopy (FT-IR). Differential thermal analysis (DTA) results showed significant increase in the thermal stability of the nanocomposite with respect to that of pure polymer. The nanocomposite films deposited on the p- and n-type Si substrates formed very smooth surface with rms roughness of 0.045 and 0.058 nm respectively. Deconvoluted $Si_{2s}$ spectra revealed the domination of the Si-OH hydrogen bonds and Si-O-Si covalence bonds in the structure of the nanocomposite film deposited on the p- and n-type Si semiconductor layers respectively. The fabricated n-channel field-effect-transistor (FET) showed the low threshold voltage and leakage currents because of the stronger connection between the nanocomposite and n-type Si substrate. Whereas, dominated hydroxyl groups in the nanocomposite dielectric film deposited on the p-type Si substrate increased trap states in the interface, led to the drop of FET operation.

• Journal of Powder Materials
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• v.17 no.3
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• pp.230-234
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• 2010

Homogenous silica-coated $CoFe_2O_4$ samples with controlled silica thickness were synthesized by the reverse microemulsion method. First, 7 nm size cobalt ferrite nanoparticles were prepared by thermal decomposition methods. Hydrophobic cobalt ferrites were coated with controlled $SiO_2$ using polyoxyethylene(5)nonylphenylether (Igepal) as a surfactant, $NH_4OH$ and tetraethyl orthosilicate (TEOS). The well controlled thickness of the silica shell was found to depend on the reaction time and the amount of surfactant used during production. Thick shell was prepared by increasing reaction time and small amount of surfactant.