• Title/Summary/Keyword: multi-phase delay-locked loop

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Low Power Serial Interface I/O by using Phase Modulation (위상변조를 이용한 저 전력 입출력 인터페이스 회로)

  • Park, Hyung-Min;Kang, Jin-Ku
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.2
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    • pp.1-6
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    • 2011
  • This paper describes a phase modulation I/O (PMIO) serial interface circuit that supports 1Gbps transfer rate with 12mW power consumption at 1.2V supply. The proposed PMIO which consists of TX and RX blocks utilizes a phase modulation technique. The rising edge is fixed to get the clock phase information and falling edge has multi positions for the multi-data information to increase the transfer rate. The designed circuit use the 16 possible falling edge positions. The data transfer rate is four times faster than the clock rate. The circuit has been implemented using $0.13{\mu}m$ CMOS process. Measured results show the circuit exhibits peak-to-peak jitters of transfer data (phase data) and recovery data.

A 3.2Gb/s Clock and Data Recovery Circuit without Reference Clock for Serial Data Communication (시리얼 데이터 통신을 위한 기준 클록이 없는 3.2Gb/s 클록 데이터 복원회로)

  • Kim, Kang-Jik;Jung, Ki-Sang;Cho, Seong-Ik
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.46 no.2
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    • pp.72-77
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    • 2009
  • In this paper, a 3.2Gb/s clock and data recovery (CDR) circuit for a high-speed serial data communication without the reference clock is described This CDR circuit consists of 5 parts as Phase and frequency detector(PD and FD), multi-phase Voltage Controlled-Oscillator(VCO), Charge-pumps (CP) and external Loop-Filter(KF). It is adapted the PD and FD, which incorporates a half-rate bang-bang type oversampling PD and a half-rate FD that can improve pull-in range. The VCO consists of four fully differential delay cells with rail-to-rail current bias scheme that can increase the tuning range and tuning linearity. Each delay cell has output buffers as a full-swing generator and a duty-cycle mismatch compensation. This materialized CDR can achieve wide pull-in range without an extra reference clock and it can be also reduced chip area and power consumption effectively because there is no additional Phase Locked- Loop(PLL) for generating reference clock. The CDR circuit was designed for fabrication using 0.18um 1P6M CMOS process and total chip area excepted LF is $1{\times}1mm^2$. The pk-pk jitter of recovered clock is 26ps at 3.2Gb/s input data rate and total power consumes 63mW from 1.8V supply voltage according to simulation results. According to test result, the pk-pk jitter of recovered clock is 55ps at the same input data-rate and the reliable range of input data-rate is about from 2.4Gb/s to 3.4Gb/s.

A DLL-Based Multi-Clock Generator Having Fast-Relocking and Duty-Cycle Correction Scheme for Low Power and High Speed VLSIs (저전력 고속 VLSI를 위한 Fast-Relocking과 Duty-Cycle Correction 구조를 가지는 DLL 기반의 다중 클락 발생기)

  • Hwang Tae-Jin;Yeon Gyu-Sung;Jun Chi-Hoon;Wee Jae-Kyung
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.2 s.332
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    • pp.23-30
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    • 2005
  • This paper describes a DLL(delay locked loop)-based multi-clock generator having the lower active stand-by power as well as a fast relocking after re-activating the DLL. for low power and high speed VLSI chip. It enables a frequency multiplication using frequency multiplier scheme and produces output clocks with 50:50 duty-ratio regardless of the duty-ratio of system clock. Also, digital control scheme using DAC enables a fast relocking operation after exiting a standby-mode of the clock system which was obtained by storing analog locking information as digital codes in a register block. Also, for a clock multiplication, it has a feed-forward duty correction scheme using multiphase and phase mixing corrects a duty-error of system clock without requiring additional time. In this paper, the proposed DLL-based multi-clock generator can provides a synchronous clock to an external clock for I/O data communications and multiple clocks of slow and high speed operations for various IPs. The proposed DLL-based multi-clock generator was designed by the area of $1796{\mu}m\times654{\mu}m$ using $0.35-{\mu}m$ CMOS process and has $75MHz\~550MHz$ lock-range and maximum multiplication frequency of 800 MHz below 20psec static skew at 2.3v supply voltage.

Design of a 26ps, 8bit Gated-Ring Oscillator Time-to-Digital Converter using Vernier Delay Line (버니어 지연단을 이용한 26ps, 8비트 게이티드 링 오실레이터 시간-디지털 변환기의 설계)

  • Jin, Hyun-Bae;Park, Hyung-Min;Kim, Tae-Ho;Kang, Jin-Ku
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.2
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    • pp.7-13
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    • 2011
  • This paper presents a Time-to-Digital Converter which is a key block of an All-Digital Phase Locked Loop. In this work, a Vernier Delay Line is added in a conventional Gated Ring Oscillator, so it could get multi-phases and a high resolution. The Gated Ring Oscillator uses 7 unit delay cell, the Vernier Delay Line is used each delay cell. So proposed Time-to-Digital Converter uses total 21 phases. This Time-to-Digital Converter circuit is designed and laid out in $0.13{\mu}m$ 1P-6M CMOS technology. The proposed Time-to-Digital Converter achieves 26ps resolution, maximum input signal frequency is 100MHz and the digital output of proposed Time-to-Digital Converter are 8-bits. The proposed TDC detect 5ns phase difference between Start and Stop signal. A power consumption is 8.4~12.7mW depending on Enable signal width.

A Design of DLL-based Low-Power CDR for 2nd-Generation AiPi+ Application (2세대 AiPi+ 용 DLL 기반 저전력 클록-데이터 복원 회로의 설계)

  • Park, Joon-Sung;Park, Hyung-Gu;Kim, Seong-Geun;Pu, Young-Gun;Lee, Kang-Yoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.4
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    • pp.39-50
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    • 2011
  • In this paper, we presents a CDR circuit for $2^{nd}$-generation AiPi+, one of the Intra-panel Interface. The speed of the proposed clock and data recovery is increased to 1.25 Gbps compared with that of AiPi+. The DLL-based CDR architecture is used to generate the multi-phase clocks. We propose the simple scheme for frequency detector (FD) to mitigate the harmonic-locking and reduce the complexity. In addition, the duty cycle corrector that limits the maximum pulse width is used to avoid the problem of missing clock edges due to the mismatch between rising and falling time of VCDL's delay cells. The proposed CDR is implemented in 0.18 um technology with the supply voltage of 1.8 V. The active die area is $660\;{\mu}m\;{\times}\;250\;{\mu}m$, and supply voltage is 1.8 V. Peak-to-Peak jitter is less than 15 ps and the power consumption of the CDR except input buffer, equalizer, and de-serializer is 5.94 mW.