• Proceedings of the Korean Society of Crop Science Conference
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• 2017.06a
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• pp.36-36
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• 2017

Out of twenty common protein amino acids, there are many kinds of non protein amino acids (NPAAs) that exist as secondary metabolites and exert ecological functions in plants. Mimosine (Mim), one of those NPAAs derived from L. leucocephala acts as an iron chelator and reversely block mammalian cell cycle at G1/S phases. Cysteine (Cys) is decisive for protein and glutathione that acts as an indispensable sulfur grantor for methionine and many other sulfur-containing secondary products. Cys biosynthesis includes consecutive two steps using two enzymes-serine acetyl transferase (SAT) and O-acetylserine (thiol)lyase (OASTL) and appeared in plant cytosol, chloroplast, and mitochondria. In the first step, the acetylation of the ${\beta}$-hydroxyl of L-serine by acetyl-CoA in the existence of SAT and finally, OASTL triggers ${\alpha}$, ${\beta}$-elimination of acetate from OAS and bind $H_2S$ to catalyze the synthesis of Cys. Mimosine synthase, one of the isozymes of the OASTLs, is able to synthesize Mim with 3-hydroxy-4-pyridone (3H4P) instead of $H_2S$ for Cys in the last step. Thus, the aim of this study was to clone and characterize the cytosolic (Cy) OASTL gene from L. leucocephala, express the recombinant OASTL in Escherichia coli, purify it, do enzyme kinetic analysis, perform docking dynamics simulation analysis between the receptor and the ligands and compare its performance between Cys and Mim synthesis. Cy-OASTL was obtained through both directional degenerate primers corresponding to conserved amino acid region among plant Cys synthase family and the purified protein was 34.3KDa. After cleaving the GST-tag, Cy-OASTL was observed to form mimosine with 3H4P and OAS. The optimum Cys and Mim reaction pH and temperature were 7.5 and $40^{\circ}C$, and 8.0 and $35^{\circ}C$ respectively. Michaelis constant (Km) values of OAS from Cys were higher than the OAS from Mim. Inter fragment interaction energy (IFIE) of substrate OAS-Cy-OASTL complex model showed that Lys, Thr81, Thr77 and Gln150 demonstrated higher attraction force for Cys but 3H4P-mimosine synthase-OAS intermediate complex showed that Gly230, Tyr227, Ala231, Gly228 and Gly232 might provide higher attraction energy for the Mim. It may be concluded that Cy-OASTL demonstrates a dual role in biosynthesis both Cys and Mim and extending the knowledge on the biochemical regulatory mechanism of mimosine and cysteine.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.543-548
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• 2014

In this paper, the dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitors using $Al_2O_3-HfO_2-Al_2O_3$ and $SiO_2-HfO_2-SiO_2$ sandwiched structure under constant voltage stress (CVS) are characterized. These results indicate that although the multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature, it induces greater dielectric relaxation level (in ppm). It is also shown that dielectric relaxation increases and leakage current decreases as functions of stress time under CVS, because of the charge trapping effect in the high-k dielectric.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.7
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• pp.747-752
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• 2014

This paper relates 10% shrink from $0.13{\mu}m$ design for logic devices as well as input and output (I/O) circuits, different from the previous shrink methodologies which shrink only core device. Thin gate oxide was changed to decoupled plasma nitridation(DPN) oxide as a thin gate oxide (1.2V) to reduce the flicker noise, resulting in three to five times lower flicker noise than pre-shrink process. Unavoidable issue by shrink is capacitor for this normally metal insulator metal (MIM). To solve this issue, 20% higher unit MIM capacitor ($1.2fF/{\mu}m^2$) was developed and its performance were evaluated.

• Journal of the Korea Institute of Military Science and Technology
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• v.15 no.3
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• pp.231-240
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• 2012

During the past two decades, Metal Injection Molding(MIM) has become a very competitive technology to fabricate small, precise and complex-shaped parts in large quantities. In this research, the applicability of MIM technology in the mass-production of the high precision fuze parts to save manufacturing cost was investigated. The water-atomized 17-4PH stainless steel powder, one of the best corrosion-resistant high strength materials, was injection-molded into real-shape fuze part and flat tensile specimens. The injection-molded parts were thermally debound in hydrogen gas flow without solvent extraction. Sintering of the debound parts was carried out in vacuum at temperatures ranging from $1150^{\circ}C$ to $1370^{\circ}C$. The sintering behavior, mechanical properties, dimensional precision, corrosion resistance of the MIMed 17-4PH stainless parts were investigated. It was found that almost all the properties of the MIMed parts were comparable to those of the mechanically machined parts. Also, actual military field tests using both MIMed and mechanically machined fuze parts were performed as well and were found to be very successful.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.194-199
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• 1997

We fabricated MIM (Metal-Insulator-Metal) antifuses with Al/a-Si/Mo structure and then examined the I-V characteristics and on-state resistance distribution of antifuses. The leakage current of antifuses is below $1Pa/{\mu}m^2$, and programming voltage lies within 10 to 11 V. After programming, on-resistance of antifuses is mostly 10-20$\Omega$ and 20% of these have above 100$\Omega$. In order to reduce on-resistance and the deviation of this distribution, we tried to inject current again into already programed antifuses (we call this re-programming method). From this method, the resistance of antifuses with above 100Ω can be reduced to below 50$\Omega$. When antifuses are programmed by re-programming method, these antifuses have more uniform and lower on-resistance than programmed with one-pulse.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1016-1022
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• 2001

This study presents the microstructure-electrical property relationship of reactive-sputtered Ta$_2$O$_{5}$ MIM capacitor structure processed by annealing in a vacuum and $O_2$ ambience. A microstructural investigation showed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-Ta$_2$O$_{5}$ in $700^{\circ}C$ annealing. On annealing under the $O_2$ atmosphere, the Ta$_2$O$_{5}$ film exhibited the trend of its composition\`s approaching to stoichiometry from off-stoichiometry, analyzed by EPMA, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. In the case of low temperature vacuum-annealing treatment, the leakage current behavior was stable irrespective of applied electric field. In the high temperature-annealed film at a vacuum condition, the electrical properties was observed to deteriorate. The results state that in Ta$_2$O$_{5}$ film annealed at $O_2$ atmosphere, gives rise to improvement of electrical characteristics in the capacitor were improved by reducing oxygen-vacancy and dandling Ta-O bond.-O bond.

• Current Optics and Photonics
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• v.4 no.5
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• pp.428-433
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• 2020

Recently, the on-chip autofocus (AF) function has become essential to the CMOS image sensor. An auto-focus usually operates using phase detection of the photocurrent difference from a pair of AF pixels that have focused or defocused. However, the phase-detection method requires a pair of AF pixels for comparison of readout. Therefore, the pixel variation may reduce AF performance. In this paper, we propose a color-selective AF pixel with a plasmonic nanostructure in a 0.9 μ㎡ pixel. The suggested AF pixel requires one pixel for AF function. The plasmonic nanostructure uses metal-insulator-metal (MIM) stack arrays instead of a color filter (CF). The color filters are formed at the subwavelength, and they transmit the specific wavelength of light according to the stack period and incident angles. For the optical analysis of the pixel, a finite-difference time-domain (FDTD) simulation was conducted. The analysis showed that the MIM stack arrays in the pixels perform as an AF pixel. As the primary metric of AF performance, the resulting AF contrasts are 1.8 for the red pixels, 1.6 for green, and 1.5 blue. Based on the simulation results, we confirmed the autofocusing performance of the MIM stack arrays.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.2
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• pp.77-82
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• 2018

Electromagnetic wave transmission through periodic metal-insulator-metal(MIM) waveguides as a function of plate thickness has not been extensively studied at various terahertz frequencies. In this paper, we investigate the transmittances through gold MIM slits when a normally incident wave with parallel polarization is considered at several terahertz frequencies. In addition, the results are compared to the case of a perfect electric conductor, and the differences are discussed.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.35-39
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• 2011

An electrically erasable programmable read-only memory (EEPROM) containing a stacked metal-insulator-metal (MIM) and n-well capacitor is proposed. It was fabricated using a 0.18 $\mu$m standard complementary metal-oxide semiconductor process. The depletion capacitance of the n-well region was effectively applied without sacrificing the cell-area and control gate coupling ratio. The device performed very similarly to the MIM capacitor cell regardless of the smaller cell area. This is attributed to the high control gate coupling ratio and capacitance. The erase speed of the proposed EEPROM was faster than that of the cell containing the MIM control gate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.143-144
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• 2005

Recently, MIM(metal-insulator-metal) capacitor is one of the essential device for DRAM device. In this thesis, $Al_2O_3$ thin film which has a relatively high dielectric constant was deposited by ALD(atomic layer deposition) using MPTMA and $H_2O$ source. Deposition temperature of $Al_2O_3$ thin film was $200^{\circ}C$ and its thickness was 300 ${\AA}$. $RuO_2$ bottom electrode was deposited by RF-magnetron sputtering using $RuO_2$ target. The physical characteristics of $Al_2O_3$ films were investigated by AES, TEM and Ellipsometry. Electrical characteristics were analyzed by C-V and I-V measurement.