The Journal of the Korea institute of electronic communication sciences (한국전자통신학회논문지)

Korea Institute of Electronic Communication Science (한국전자통신학회)
권호 표지
DOI QR코드

DOI QR Code

A study on Flicker Noise Improvement by Decoupled Plasma Nitridation

Decoupled Plasma Nitridation에 의한 Flicker 노이즈 개선에 관한 연구

  • 문성열 (전남대학교 전기 및 반도체공학과) ;
  • 강성준 (전남대학교 전기 및 반도체공학과) ;
  • 정양희 (전남대학교 전기 및 반도체공학과)
  • Received : 2014.05.30
  • Accepted : 2014.07.11
  • Published : 2014.07.31
Download PDF
⟨ Previous Next ⟩

Abstract

This paper relates 10% shrink from $0.13{\mu}m$ design for logic devices as well as input and output (I/O) circuits, different from the previous shrink methodologies which shrink only core device. Thin gate oxide was changed to decoupled plasma nitridation(DPN) oxide as a thin gate oxide (1.2V) to reduce the flicker noise, resulting in three to five times lower flicker noise than pre-shrink process. Unavoidable issue by shrink is capacitor for this normally metal insulator metal (MIM). To solve this issue, 20% higher unit MIM capacitor ($1.2fF/{\mu}m^2$) was developed and its performance were evaluated.

본 논문은 $0.13{\mu}m$ 기술의 디자인을 10% 축소하는데 기존의 로직 디바이스만의 축소와는 달리 로직뿐 아니라 입, 출력 회로의 축소에 관한 것이다. 게이트 산화막(1.2V)을 decoupled plasma nitridation(DPN) oxide로 변경함으로써 flicker 노이즈를 축소 전 공정에 비해 1/3-1/5배 감소됨을 확인하였다. 또한, 축소에 의한 피할 수 없는 문제는 일반적인 metal insulator metal(MIM)의 캐패시터 문제이다. 이를 해결하기 위하여 20% 높은 MIM 캐패시터($1.2fF/{\mu}m^2$)를 개선하고 그 특성을 평가하였다.

Keywords

References

  1. Y. Tsividis, "Analysis and Design of Analog Integrated Circuits," Solid-State Circuits Mag. IEEE, vol. 6, no. 1, 2014, pp. 37-38. https://doi.org/10.1109/MSSC.2013.2289597
  2. C. Hu, G. P. Li, E. Worley, and J. White, "Consideration of low-frequency noise in MOSFET'' s for analog performance," IEEE Electron Device Lett., vol. 17, no. 12, 1996, pp. 552-554. https://doi.org/10.1109/55.545767
  3. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, "A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors," IEEE Trans. Electron Devices, vol. 37, no. 3, 1990, pp. 654-665. https://doi.org/10.1109/16.47770
  4. C. Jakobson, I. Bloom, and Y. Nemirovsky, "1=f noise in CMOS transistors for analog applications from subthreshold to saturation," J. of Solid-State Electron., vol. 42, no. 10, 1998, pp. 1807-1817. https://doi.org/10.1016/S0038-1101(98)00162-2
  5. I. Bloom and Y. Nemirovsky, "1=f noise reduction of metal-oxide-semiconductor transistors by cycling from inversion to accumulation," Appl. Phys. Lett., vol. 58, no. 15, 1991, pp. 1664-1666. https://doi.org/10.1063/1.105130
  6. B. Dierickx and E. Simoen, "The decrease of ''random telegraph signal,'' noise in metal- oxide-semiconductor field-effect transistors when cycled from inversion to accumulation," J. Appl. Phys., vol. 71, no. 4, 1992, pp. 2028-2029. https://doi.org/10.1063/1.351145
  7. H. J. Chung, "5-TFT OLED Pixel Circuit Compensating Threshold Voltage Variation of p-channel Poly-Si TFTs," J. of The Korea Institute of Electronic Communication Sciences, vol. 9, no. 3, 2014, pp. 279-284. https://doi.org/10.13067/JKIECS.2014.9.3.279
  8. H. J. Chung, "A Voltage Programming AMOLED Pixel Circuit Compensating Threshold Voltage Variation of n-channel Poly-Si TFTs," J. of The Korea Institute of Electronic Communication Sciences, vol. 8, no. 2, 2013, pp. 207-212. https://doi.org/10.13067/JKIECS.2013.8.2.207
  9. B. Razavi, "A study of phase noise in CMOS oscillators," IEEE J. Solid state Circuit, vol. 31, 1996, pp. 331-343. https://doi.org/10.1109/4.494195
  10. T. Boutchacha, G. Ghibaudo, G. Guegan, and T. Skotnicki, "Low frequency noise characterization of 0.18 um Si CMOS transistors," Microelectron. Reliab., vol. 37, no. 10/11, 1997, pp. 1599-1602. https://doi.org/10.1016/S0026-2714(97)00119-4
  11. T. Strom and S. Signell, "Analysis of periodically switched linear circuits," IEEE Trans. Circuits Syst., vol. 24, 1977, pp. 531-541. https://doi.org/10.1109/TCS.1977.1084274
  12. H. Tian, B. Fowler, and A. El Gamal, "Analysis of temporal noise in CMOS APS," In Proc. SPIE, vol. 3649, San Jose, CA, Jan. 1999, pp. 177-185.