JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Characterization of Dielectric Relaxation and Reliability of High-k MIM Capacitor Under Constant Voltage Stress

  • Kwak, Ho-Young (Dept. of Electronics Engineering, Chungnam National University) ;
  • Kwon, Sung-Kyu (Dept. of Electronics Engineering, Chungnam National University) ;
  • Kwon, Hyuk-Min (Dept. of Electronics Engineering, Chungnam National University) ;
  • Sung, Seung-Yong (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lim, Su (Dongbu HiTek Semiconductor Inc.) ;
  • Kim, Choul-Young (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, Ga-Won (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Dept. of Electronics Engineering, Chungnam National University)
  • Received : 2014.05.08
  • Accepted : 2014.09.01
  • Published : 2014.10.30
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Abstract

In this paper, the dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitors using $Al_2O_3-HfO_2-Al_2O_3$ and $SiO_2-HfO_2-SiO_2$ sandwiched structure under constant voltage stress (CVS) are characterized. These results indicate that although the multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature, it induces greater dielectric relaxation level (in ppm). It is also shown that dielectric relaxation increases and leakage current decreases as functions of stress time under CVS, because of the charge trapping effect in the high-k dielectric.

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References

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