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http://dx.doi.org/10.5573/JSTS.2014.14.5.543

Characterization of Dielectric Relaxation and Reliability of High-k MIM Capacitor Under Constant Voltage Stress  

Kwak, Ho-Young (Dept. of Electronics Engineering, Chungnam National University)
Kwon, Sung-Kyu (Dept. of Electronics Engineering, Chungnam National University)
Kwon, Hyuk-Min (Dept. of Electronics Engineering, Chungnam National University)
Sung, Seung-Yong (Dept. of Electronics Engineering, Chungnam National University)
Lim, Su (Dongbu HiTek Semiconductor Inc.)
Kim, Choul-Young (Dept. of Electronics Engineering, Chungnam National University)
Lee, Ga-Won (Dept. of Electronics Engineering, Chungnam National University)
Lee, Hi-Deok (Dept. of Electronics Engineering, Chungnam National University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.14, no.5, 2014 , pp. 543-548 More about this Journal
Abstract
In this paper, the dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitors using $Al_2O_3-HfO_2-Al_2O_3$ and $SiO_2-HfO_2-SiO_2$ sandwiched structure under constant voltage stress (CVS) are characterized. These results indicate that although the multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature, it induces greater dielectric relaxation level (in ppm). It is also shown that dielectric relaxation increases and leakage current decreases as functions of stress time under CVS, because of the charge trapping effect in the high-k dielectric.
Keywords
MIM (Metal-Insulator-Metal); AHA ($Al_2O_3-HfO_2-Al_2O_3$); SHS ($SiO_2-HfO_2-SiO_2$); charge trapping effect; dielectric relaxation;
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