Characterization of Dielectric Relaxation and Reliability of High-k MIM Capacitor Under Constant Voltage Stress |
Kwak, Ho-Young
(Dept. of Electronics Engineering, Chungnam National University)
Kwon, Sung-Kyu (Dept. of Electronics Engineering, Chungnam National University) Kwon, Hyuk-Min (Dept. of Electronics Engineering, Chungnam National University) Sung, Seung-Yong (Dept. of Electronics Engineering, Chungnam National University) Lim, Su (Dongbu HiTek Semiconductor Inc.) Kim, Choul-Young (Dept. of Electronics Engineering, Chungnam National University) Lee, Ga-Won (Dept. of Electronics Engineering, Chungnam National University) Lee, Hi-Deok (Dept. of Electronics Engineering, Chungnam National University) |
1 | T. Remmel, R. Ramprasad, and J. Walls, "Leakage Behavior and Reliability Assessment of Tantalum Oxide Dielectric MIM Capacitors," Proc. Int. Reliability Physics Symp., pp.277-281, Mar. 2003. |
2 |
X. Yu, C. Zhu, H. Hu, A. Chin, M. F. Li, B. J. Cho, D. L. Kwong, P. D. Foo, and M. B. Yu, "A highdensity MIM capacitor (13fF/ |
3 | J. Babcock, S. Balster, A. Pinto, C. Dirnecker, P. Steinmann, R. Jumpertz, and B. El-Kareh, "Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics," IEEE Electron Device Lett., Vol.22, No.5, pp.230-232, May, 2001. DOI |
4 |
H. Y. Kwak, H. M. Kwon, Y. J. Jung, S. K. Kwon, J. H. Jang, W. I Choi, M. L. Ha, J, I, Lee, S. J. Lee and H. D. Lee, "Characterization of |
5 | Z. Ning, H. Casier, R. Gillon, H.X. Delecourt, D. Tack, E. D. Vylder, P. V. Torre and D. Hegsted, "Analog characterization of dielectric relaxation of MIM capacitor using an improved recovery voltage technique," IEEE Intenational Conference on Microelectronic Test Structures (ICMTS), pp.109-114, Mar. 2007. |
6 | A. Zanchi, F. Tsay, and I. Papantonopoulos, "Impact of Capacitor Dielectric Relaation on a 14-bit 70-MS/s pipeline ADC in 3-V BiCMOS," IEEE Jonrnal of Solid-State Circuits, Vol.38, No.12, pp.2077-2086, Dec, 2003. DOI ScienceOn |
7 | Z. Xu, L. Pantisano, A. Kerber, R. Degraeve, E. Cartier, S. De Gendt, M. Heyns and G. Groeseneken, "A study of relaxation current in high-k dielectric stacks," IEEE Trans Electron Devices, Vol. 51, No.3, pp.402-408, Mar. 2004. DOI |
8 | H. Reisinger, G. Steinlesberger, S. Jakschik, M. Gutsche, T. Hecht, M. Leonhard, U. Schroder, H. Seidl, and D. Schumann, "A comparative study of dielectric relaxation losses in alternative dielectrics," in IEDM tech. Dig., pp.12.2.1-12.2.4, Dec. 2001. |
9 |
C. C Huang, C. H. Cheng, A. Chin, and C. P. Chou, "Leakage Current Improvement of Ni/TiNiO/TaN Metal-Insulator-Metal Capacitors using Optimized |
10 | J. C. Kuenen and G. M. Meijer, "Measurement of dielectric absorption of capacitors and analysis of its effects on VCOs," IEEE Tras. on Instrumentation nad Measurement, Vol.45, No.1, pp.89-97, Feb. 1996. DOI |
11 |
V. Mikhelashvili, G. Eisenstein, and A. Lahav, "High capacitance density metal-insulator-metal structure based on |
12 |
H. Hu, C. Zhu, Y. F. Lu, Y. H. Wu, T. Liew, M. F. Li, B. J. Cho, W. K. Choi, and N. Yakovlev, "Physical and elecrical characterization of |
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