• ETRI Journal
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• 제34권3호
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• pp.388-398
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• 2012

Three-dimensional (3D) memories using through-silicon vias (TSVs) will likely be the first commercial applications of 3D integrated circuit technology. A 3D memory yield can be enhanced by vertical redundancy sharing strategies. The methods used to select memory dies to form 3D memories have a great effect on the 3D memory yield. Since previous die-selection methods share redundancies only between neighboring memory dies, the opportunity to achieve significant yield enhancement is limited. In this paper, a novel die-selection method is proposed for multilayer 3D memories that shares redundancies among all of the memory dies by using additional TSVs. The proposed method uses three selection conditions to form a good multi-layer 3D memory. Furthermore, the proposed method considers memory fault characteristics, newly detected faults after bonding, and multiple memory blocks in each memory die. Simulation results show that the proposed method can significantly improve the multilayer 3D memory yield in a variety of situations. The TSV overhead for the proposed method is almost the same as that for the previous methods.

• ETRI Journal
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• 제33권6호
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• pp.904-913
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• 2011

Three-dimensional (3D) memories using through-silicon vias (TSVs) as vertical buses across memory layers will likely be the first commercial application of 3D integrated circuit technology. The memory dies to stack together in a 3D memory are selected by a die-selection method. The conventional die-selection methods do not result in a high-enough yields of 3D memories because 3D memories are typically composed of known-good-dies (KGDs), which are repaired using self-contained redundancies. In 3D memory, redundancy sharing between neighboring vertical memory dies using TSVs is an effective strategy for yield enhancement. With the redundancy sharing strategy, a known-bad-die (KBD) possibly becomes a KGD after bonding. In this paper, we propose a novel die-selection method using KBDs as well as KGDs for yield enhancement in 3D memory. The proposed die-selection method uses three search-space conditions, which can reduce the search space for selecting memory dies to manufacture 3D memories. Simulation results show that the proposed die-selection method can significantly improve the yield of 3D memories in various fault distributions.

• 대한전자공학회논문지SD
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• 제48권7호
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• pp.30-36
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• 2011

많은 반도체 회사들이 메모리 층 사이에서 수직 버스의 역할을 하는 TSV를 사용한 3차원 메모리를 개발하고 있다. 3차원 메모리는 KGD로 이루어지며, 만약 추가 고장이 접합 공정 중에 발생한다면, 반드시 수리되어야 한다. 공유 예비 셀을 가지는 3차원 메모리의 수율을 증진시키기 위해서, 3차원 메모리 내의 메모리 다이를 효과적으로 적층하는 다이 매칭 방법이 필요하다. 본 논문에서는 공유 예비 셀을 가지는 3차원 메모리의 수율 증진을 위해 접합 공정에서 추가 고장이 발생하는 경우를 고려한 다이 매칭 방법을 제안한다. 세 가지 경계 제한 조건이 제안하는 다이 매칭 방법에서 사용된다. 이 조건은 3차원 메모리를 제작하기 위해 선택하는 메모리 다이의 검색 범위를 제한한다. 시뮬레이션 결과는 제안하는 다이 매칭 방법이 3차원 메모리의 수율을 크게 향상 시킬 수 있음을 보여 준다.

• ETRI Journal
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• 제32권4호
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• pp.642-644
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• 2010

With the rapid increase occurring in both the capacity and density of memory products, test and repair issues have become highly challenging. Memory repair is an effective and essential methodology for improving memory yield. An SoC utilizes built-in redundancy analysis (BIRA) with built-in self-test for improving memory yield and reliability. This letter proposes a new heuristic algorithm and new hardware architecture for the BIRA scheme. Experimental results indicate that the proposed algorithm shows near-optimal repair efficiency in combination with low area and time overheads.

• 대한전자공학회논문지SD
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• 제46권9호
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• pp.14-24
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• 2009

System on panel 프레임 버퍼를 위한 메모리 셀 어레이와 주변회로가 설계되었다. 또한, system on panel 공정의 낮은 yield를 극복하기 위해, 블럭 단위의 parallel test 방안이 제안되었다. 기존의 메모리 테스트 보다 빠르게 fault detection이 가능하며, 다양한 embedded memory나 일반 SRAM 테스트 분야에도 적용 가능하다. 또한 기존의 다양한 test vector pattern이 그대로 적용될 수 있어 fault coverage가 높고, 최근의 추세인 hierarchical bit line과 divided word line 구조에도 적용될 수 있다.

• 열처리공학회지
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• 제27권2호
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• pp.59-64
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• 2014

Cu-Al-Mn shape memory alloys of a variety of composition were characterized in terms of shape memory properties and cold workability. Cold workability tested by cold rolling indicated that the alloys solution treated in the ${\alpha}+{\beta}$ region have a higher ductility than those solution treated in the ${\beta}$ region. Also it is known that cold workability increased with the decrease in Al content in the ${\beta}$ region. This seems to be resulted from the fact that Mn addition causes to expand ${\beta}$ region toward lower Al content and lower order-disorder transition temperature, consequently, ${\beta}$ of excellent workability being frozen even at room temperature. Experimental results regarding shape memory showed that the properties were better with a higher Al contents at a given Mn content, which is closely related with martensitic transformation. It is also shown that super elasticity limit was enhanced with decrease in the yield strength of alloys because a lower yield strength seems to initiates slip at the lower applied stress.

• Journal of Mechanical Science and Technology
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• 제19권7호
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• pp.1460-1468
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• 2005

Two possible shape memory processes, austenite to detwinned martensite transformation and twinned martensite to detwinned martensite transformation of a shape memory alloy have been modeled and examined. Eshelby's equivalent inclusion method with Mori-Tanaka's mean field theory is used for modeling of the shape memory processes of TiNi shape memory alloy reinforced aluminum matrix composite. The shape memory amount of shape memory alloy, plastic strain and residual stress in the matrix are computed and compared for the two processes. It is shown that the shape memory amount shows differences in a small prestrain region, but the plastic strain and the residual stress in the matrix show differences in the whole prestrain region. The shape memory process with initially martensitic state of the shape memory alloy would be favorable to the increase in the yield stress of the composite owing to the large compressive residual stress and plastic strain in the matrix.

• 전자공학회논문지
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• 제51권2호
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• pp.38-45
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• 2014

본 논문에서는 메모리 컴파일러를 정확하고 빠르게 특성화할 수 있도록 기준 메모리를 기반으로 특성화하는 방법을 제안하였다. 제안한 특성화 방법은 메모리 컴파일러의 정확도를 유지하면서 특성화 시간을 최소화하기 위해 메모리 컴파일러의 타이밍 경향을 분석하고 분석 결과를 토대로 기준 메모리를 선정하고, 메모리간의 경향성을 대변할 수 있도록 모델링하였다. 본 논문에서 제안한 방법론을 검증하기 위하여 130nm에서 개발된 메모리 컴파일러를 제안한 방법을 이용하여 110nm 메모리 컴파일러를 특성화하였다. 이를 통해 생성한 메모리들의 특성과 SPICE를 사용하여 특성화한 결과를 비교하여 메모리 타이밍의 평균 오차율은 ${\pm}0.1%$ 이내였으며 실제 110nm 공정을 사용하여 제작된 메모리 BIST(Built-In Self Test) 테스트 칩으로 기능 검사한 결과, 수율(Yield)이 98.8% 임을 확인하였다. 또한, 180nm 공정을 사용하여 비교한 결과, 수율이 98.3%로 그 유용성을 확인할 수 있었다.

• ETRI Journal
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• 제35권5호
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• pp.808-818
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• 2013

Programmable memory built-in self-test (PMBIST) is an attractive approach for testing embedded memory. However, the main difficulties of the previous works are the large area overhead and low flexibility. To overcome these problems, a new flexible PMBIST (FPMBIST) architecture that can test both single-port memory and dual-port memory using various test algorithms is proposed. In the FPMBIST, a new instruction set is developed to minimize the FPMBIST area overhead and to maximize the flexibility. In addition, FPMBIST includes a diagnostic scheme that can improve the yield by supporting three types of diagnostic methods for repair and diagnosis. The experiment results show that the proposed FPMBIST has small area overhead despite the fact that it supports various test algorithms, thus having high flexibility.

• 한국재료학회지
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• 제9권4호
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• pp.419-427
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• 1999

TiNi shape memory alloy was shape memory heat-treated and investigated its mechanical properties with the variation of prestrain. Also 6061 Al matrix composites with TiNi shape memory alloy fiber as reinforcement have been fabricated by Permanent Mold Casting to investigate the microstructures and interface properties. Yield stress of TiNi wire was the most high in the case of before heat-treatment and then decreased as increasing heat-treatment time. In each heat-treatment condition, the yield stress of TiNi wire was not changed with increasing the amount of prestrain. The interface bonding of TiNi/6061Al composite was fine. There was a 2$\mu\textrm{m}$ thickness of diffusion reaction layer at the interface. We could find out that this diffusion reaction layer was made by the mutual diffusion. The diffusion rate from Al base to TiNi wire was faster than that of reverse diffusion and the amount of the diffusion was also a little more than that of reverse.