• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.5
• /
• pp.609-614
• /
• 2014

The fringe field effects on the transient characteristics of nano-electromechanical (NEM) memory cells have been discussed by using an analytical model. The influence of fringe field becomes stronger as the size of a cell decreases. By using the proposed model, the dependency of NEM memory transient characteristics on cell parameters has been evaluated.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 1997.10a
• /
• pp.755-758
• /
• 1997

In the recent years, as the research and the development of micro and precision machinery become active, the interest of micro actuators using SMA(Shape Memory Alloy) has been increased. The dynamic characteristic analysis of SMA is necessary for actuator application and many common researches report the material characteristics of SMA sufficiently. However, the research of dynamic characteristics is very deficient. In this paper, the helical spring is fabricated with NiTi SMA wire of high resistivity The force, response speed, temperature, and displacement are measured by digital force gauge, infrared thermometer, and laser displacement sensor so that the dynamic characteristics of this SMA actuator is analyzed.

• The Transactions of the Korean Institute of Electrical Engineers D
• /
• v.53 no.6
• /
• pp.425-432
• /
• 2004

In this paper, we introduce the analog memory fabricated in a 0.35${\mu}{\textrm}{m}$ single poly standard CMOS process. We measured the programming characteristics of the analog memory cell such as linearity, reliability etc. Finally, we found that the characteristics of the programming of the cell depend on the magnitude and the width of the programming pulse, and that the accuracy of the programming within 10mV is feasible under the optimal condition. In order to standardize the characteristics of the cell, we have investigated numbers of cells. Thus we have used a program named Labview and a data acquisition board to accumulate the data related to the programming characteristics automatically.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.8 no.1
• /
• pp.40-45
• /
• 2008

We developed small molecular organic nonvolatile $4F^2$ memory cells using metal layer evaporation followed by $O_2$ plasma oxidation. Our memory cells sandwich an upper ${\alpha}$-NPD layer, Al nanocrystals surrounded by $Al_2O_3$, and a bottom ${\alpha}$-NPD layer between top and bottom electrodes. Their nonvolatile memory characteristics are excellent: the $V_{th},\;V_p$ (program), $V_e$ (erase), memory margin ($I_{on}/I_{off}$), data retention time, and erase and program endurance were 2.6 V, 5.3 V, 8.5 V, ${\approx}1.5{\times}10^2,\;1{\times}10^5s$, and $1{\times}10^3$ cycles, respectively. They also demonstrated symmetrical current versus voltage characteristics and a reversible erase and program process, indicating potential for terabit-level nonvolatile memory.

• Journal of the Korean Institute of Telematics and Electronics B
• /
• v.29B no.1
• /
• pp.67-75
• /
• 1992

A new method of driving the PDP(Plasma Display Panel) was proposed and its characteristics were investigated. Applying high frequency non-discharge pulses to an auxiliary anode resulted an increased region of stable operation, decreased delay time and increased light intensity. It is suggested that PDP with DPM (Double Pulse Memory) drive technique improves the delay time, luminance, region of stable operation and luminous efficacy compared to PDP with PPM(Planar Pulse Memory) drive technique developed by NHK Lab. in Japan.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.13-16
• /
• 1998

An anomalous current characteristics which show the superposition of a low current level and high current level at the subthreshold region when SONOSFETs are in memory states were investigated. We have assumed this phenomena were resulted from the effect of parasitic transistors by LOCOS isolation and were modeled to a parallel equivalent circuit of one memory transistor and two parasitic transistors. Theoretical curves are well fitted in measured log I$_{D}$-V$_{G}$ curves independent of channel width of memory devices. The difference between low current level and high current level is apparently decreased with decrease of channel width of devices because parasitic devices dominantly contribute to the current conduction with decrease of channel width of memory devices. As a result, we concluded that the LOCOS isolation has to selectively adopt in the design of process for charge-trap type NVSM.VSM.

• Journal of the Semiconductor & Display Technology
• /
• v.22 no.3
• /
• pp.142-148
• /
• 2023

In this paper, we identify performance issues in executing compute kernels from PolyBench, which includes compute kernels that are the core computational units of various data-intensive workloads, such as deep learning and data-intensive applications, on Processing-in-Memory (PIM) devices. Therefore, using our in-house simulator, we measured and compared the various performance metrics of workloads based on traditional out-of-order and in-order processors with Processing-in-Memory-based systems. As a result, the PIM-based system improves performance compared to other computing models due to the short-term data reuse characteristic of computational kernels from PolyBench. However, some kernels perform poorly in PIM-based systems without a multi-layer cache hierarchy due to some kernel's long-term data reuse characteristics. Hence, our evaluation and analysis results suggest that further research should consider dynamic and workload pattern adaptive approaches to overcome performance degradation from computational kernels with long-term data reuse characteristics and hidden data locality.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.426-429
• /
• 2003

In this study, phase transformation characteristics of Nitinol shape memory alloy with 54.5wt%Ni-45.5wt%Ti were investigated by varying with annealing treatment and cutting conditions through DSC(differential scanning calorimetry). Annealing treatment conditions were considered as heat treated time of 5 min, 15 min, 30 min, and 45 min, heat treated temperature of 40$0^{\circ}C$, 50$0^{\circ}C$, 5$25^{\circ}C$, 55$0^{\circ}C$, 575$^{\circ}C$, $600^{\circ}C$, $700^{\circ}C$, 80$0^{\circ}C$, and 90$0^{\circ}C$, and environmental condition of heat treatment under vacuum or air. Cutting conditions were considered as no cutting, one side cutting, and two side cutting. Tensile test was also conducted on Nitinol shape memory alloy to investigate thermomechanical characteristics by varying with annealing heat treatment histories. According to the results, annealing treatment and cutting conditions were found to significantly affect on phase transformation and thermomechanical characteristics of Nitinol shape memory alloy.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2001.04a
• /
• pp.1097-1100
• /
• 2001

In this paper, the electro-chemical-machining characteristics of Ni-Ti Shape Memory Alloy(SMA) was investigated. From the experimental results, the optimal electro chemical machining conditions for satisfying the machining quality(fine surface & high recovery stress) might be confirmed. And it was concluded that optical electro chemical condition for Ni-Ti SMA could be obtained at approximately 100% current efficiency and high frequency pulse current.

• Journal of Magnetics
• /
• v.16 no.4
• /
• pp.386-390
• /
• 2011

This paper deals with the magnetic equivalent circuit modeling and permanent magnet (PM) performance evaluations of a pole changing memory motor (PCMM). We use a coupled transient finite element method (FEM) and Preisach modeling, which is presented to analyze the magnetic characteristics of the permanent magnets. The focus of this paper is on the evaluation of characteristics such as the magnetizing direction and the pole number of the machine under re- and de-magnetization conditions.