JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fringe Field Effects on Transient Characteristics of Nano-Electromechanical (NEM) Nonvolatile Memory Cells

  • Han, Boram (Department of Electronic Engineering from Sogang University) ;
  • Choi, Woo Young (Department of Electronic Engineering from Sogang University)
  • Received : 2013.08.26
  • Accepted : 2014.08.11
  • Published : 2014.10.30
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Abstract

The fringe field effects on the transient characteristics of nano-electromechanical (NEM) memory cells have been discussed by using an analytical model. The influence of fringe field becomes stronger as the size of a cell decreases. By using the proposed model, the dependency of NEM memory transient characteristics on cell parameters has been evaluated.

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References

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