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http://dx.doi.org/10.5573/JSTS.2014.14.5.609

Fringe Field Effects on Transient Characteristics of Nano-Electromechanical (NEM) Nonvolatile Memory Cells  

Han, Boram (Department of Electronic Engineering from Sogang University)
Choi, Woo Young (Department of Electronic Engineering from Sogang University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.14, no.5, 2014 , pp. 609-614 More about this Journal
Abstract
The fringe field effects on the transient characteristics of nano-electromechanical (NEM) memory cells have been discussed by using an analytical model. The influence of fringe field becomes stronger as the size of a cell decreases. By using the proposed model, the dependency of NEM memory transient characteristics on cell parameters has been evaluated.
Keywords
Nano-electromechanical (NEM); fringe field effect; analytical modeling; transient characteristics;
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