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Characteristics of Programming on Analog Memory Cell Fabricated in a 0.35$\mu{m}$Single Poly Standard CMOS Process  

채용웅 (계명대학 공대 전자공학과)
정동진 (계명대학 공대 전자공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers D / v.53, no.6, 2004 , pp. 425-432 More about this Journal
Abstract
In this paper, we introduce the analog memory fabricated in a 0.35${\mu}{\textrm}{m}$ single poly standard CMOS process. We measured the programming characteristics of the analog memory cell such as linearity, reliability etc. Finally, we found that the characteristics of the programming of the cell depend on the magnitude and the width of the programming pulse, and that the accuracy of the programming within 10mV is feasible under the optimal condition. In order to standardize the characteristics of the cell, we have investigated numbers of cells. Thus we have used a program named Labview and a data acquisition board to accumulate the data related to the programming characteristics automatically.
Keywords
Labview; Analog memory; Single Poly EEPROM; Resolution; Programming;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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