• Journal of IKEEE
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• v.25 no.4
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• pp.770-773
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• 2021

In this paper, the retention characteristics of 3D NAND flash memory applied with tapering and ferroelectric (HfO₂) structure were analyzed after programming operation. Electrons trapped in nitride are affected by lateral charge migration over time. It was confirmed that more lateral charge migration occurred in the channel thickened by tapering of the trapped electrons. In addition, the Oxide-Nitride-Ferroelectric (ONF) structure has better lateral charge migration due to polarization, so the change in threshold voltage (V_th) is reduced compared to the Oxide-Nitride-Oxide (ONO) structure.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.700-705
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• 2007

In this study, we observe the application of shape memory alloy(SMA) into smart structures for repeatable actuation, because SMA changes its material properties and characteristics progressively under cyclic loading conditions and finally reaches stable path(state) after a certain number of stress/temperature loading-unloading cycles, so called 'training'. In this paper, SMA wires that have been in a stable state through the training are used. Stress-strain curve of the SMA wire at different temperature levels are measured. In addition, we observe other important effects such as the rate effect according to strain rates for rapid actuation response. The current work presents the experimental test using SMA wire after training completion by mechanical cycling. Through these tests, we measure the characteristics of SMA. With the estimated SMA properties and effects, we compare the experimental results with the simulation results based on the SMA constitutive equations.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.813-818
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• 1996

Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$ device shows the memory switching characteristics under d.c. bias. In bulk material, a-As$_{10}$Ge$_{15}$ Te$_{75}$ switching threshold voltage (V$_{th}$) is very high (above 100 volts), but in the case of thin film, V$_{th}$ decreases to a few or ten a few volts. The characteristics of V$_{th}$ depends on the physical dimensions such as the thickness of thin film and the separation between d.c. electrodes, and the annealing conditions. The switching threshold voltage decreases exponentially with increasing annealing temperature and annealing time, but increases linearly with the thickness of thin film and exponentially with increasing the separation between d.c. electrodes. The desirable low switching threshold voltage, therefore, can be obtained by the stabilization through annealing and changing physical dimensions.imensions.sions.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.8
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• pp.927-933
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• 2006

The structural and electrical characteristics of PLZT thin films fabricated onto $Pt/IrO_2/Ir/Ti/SiO_2/Si$ substrates by a pulsed laser deposition were investigated to develop the high dielectric thin films for capacitor layer of semiconductor memory devices The slim region 14/50/50 PLZT thin films were fabricated by PLD and estimated the characteristics for memory application 14/50/50 PLZT thin films have crystallize into perovskite structure at the $600^{\circ}C$ deposition temperature, 200 mTorr of oxygen pressure, and 2 $J/cm^2$ of laser energy density. In this condition PLZT thin films had the dielectric constant as high as 985, storage charge density 8.17 ${\mu}C/cm^2$ and charging time 0.20 ns. Leakage current density was less than $10^{-10}A/cm^2$ up to 5 V bias voltage.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.3 s.258
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• pp.373-379
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• 2007

In this study, we observe the application of shape memory alloy(SMA) into smart structures for repeatable actuation, because SMA changes its material properties and characteristics progressively under cyclic loading conditions and finally reaches stable path(state) after a certain number of stress/temperature loading-unloading cycles, so called 'training'. In this paper, SMA wires that have been in a stable state through the training are used. Stress-strain curve of the SMA wire at different temperature levels are measured. In addition, we observe other important effects such as the rate effect according to strain rates for rapid actuation response. The current work presents the experimental test using SMA wire after training completion by mechanical cycling. Through these tests, we measure the characteristics of SMA. With the estimated SMA properties and effects, we compare the experimental results with the simulation results based on the SMA constitutive equations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.771-774
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by 0.35 $\mu\textrm{m}$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the multi-bit operation per cell, charges must be locally frapped in the nitride layer above the channel near the source-drain junction. Programming method is selected by Channel Hot Electron (CUE) injection which is available for localized trap in nitride film. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve are investigated. The multi-bit operation which stores two-bit per cell is investigated. Also, Hot Hole(HH) injection for fast erasing is used. The fabricated SONOS devices have ultra-thinner gate dielectrics and then have lower programming voltage, simpler process and better scalability compared to any other multi-bit storage Flash memory. Our programming characteristics are shown to be the most promising for the multi-bit flash memory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.127-129
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• 1994

For scale-down EEPROM, MONOS structures with the different thicknesses of gate insulators, are fabricated and the memory characteristics, such as swtching and retention characteristics are investigated. As a results, the devices with the top oxide of 20A thick were deteriorated in retentivity. However, 11V-programmable voltage for ΔV$\sub$FB/=4V and 10-year data retention were achieved in MONOS structure with the t7p oxide of 50 ${\AA}$ thick and nitride 45${\AA}$thick.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1133-1138
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• 1998

In this paper, we obtained the monodomain alignment of nematic liquid Crystal(NLC) in the cell fabricated by transcription alignment method on polyimide(PI) surface with side chain. It is considered that the LC alignment produced by the transcription alignment method is attributed to a memory effect of the NLC on PI surfaces. Also we observed that the generated pretilt angle of NLC is about $3.7^{\circ}$ with transcription alignment on PI surface. Next, we measured that the voltage-transmittance characteristics of transcription-aligned TN-LCD are almost same compared to rubbing-aligned TN-LCD. Also, we measured that the curve of transcription-aligned TN-LCD is less sharp than that of the rubbing-aligend TN-LCD in the decay time characteristics. It is considered that the response time characteristics of transcription-aligned TN-LCD are attributed to the weak anchoring strength between the LC molecules and the polymer surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.710-712
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• 2011

In this study, we fabricate resistive switching random access memory (ReRAM) devices constructed with a Al/$HfO_2$/ITO structure on glass substrates and investigate their memory characteristics. The hafnium oxide thin film used as a resistive switching layer is sputtered at room temperature in a sputtering system with a cooling unit. The Al/$HfO_2$/ITO device exhibits bipolar resistive switching characteristics, and the ratio of the high resistance (HRS) to low resistance states (LRS) is more than 60. In addition, the resistance ratio maintains even after $10^4$ seconds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.200-205
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• 2000

This paper describes the structure modeling and operation characteristics of MFMIS(metal-ferroelectric-metal-insulator-semiconductor) device using the Tsuprem4 which is a semiconductor device tool by Avanti. MFMIS device is being studied for nonvolatile memory application at various semiconductor laboratory but it is difficult to fabricate and analyze MFMIS devices using the semiconductor simulation tool: Tsuprem4, medici and etc. So the new library and new materials parameters for adjusting ferroelectric material and platinum electrodes in the tools are studied. In this paper structural model and operation characteristics of MFMIS devices are measured, which can be easily adopted to analysis of MFMIS device for nonvolatile memory device application.