Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1994.05a
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- Pages.127-129
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- 1994
A Study on the Memory Characteristics of MONOS Structure for the Scale-down EEPROM
Scale-down EEPROM을 위한 MONOS 구조의 기억특성에 관한 연굴
Abstract
For scale-down EEPROM, MONOS structures with the different thicknesses of gate insulators, are fabricated and the memory characteristics, such as swtching and retention characteristics are investigated. As a results, the devices with the top oxide of 20A thick were deteriorated in retentivity. However, 11V-programmable voltage for ΔV
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