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http://dx.doi.org/10.4313/JKEM.2011.24.9.710

Resistive Switching Characteristics of Hafnium Oxide Thin Films Sputtered at Room Temperature  

Han, Yong (Department of Nano Semiconductor Engineering, Korea University)
Cho, Kyoung-Ah (Department of Electrical Engineering, Korea University, Korea University)
Yun, Jung-Gwon (Department of Electrical Engineering, Korea University, Korea University)
Kim, Sang-Sig (Department of Nano Semiconductor Engineering, Korea University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.9, 2011 , pp. 710-712 More about this Journal
Abstract
In this study, we fabricate resistive switching random access memory (ReRAM) devices constructed with a Al/$HfO_2$/ITO structure on glass substrates and investigate their memory characteristics. The hafnium oxide thin film used as a resistive switching layer is sputtered at room temperature in a sputtering system with a cooling unit. The Al/$HfO_2$/ITO device exhibits bipolar resistive switching characteristics, and the ratio of the high resistance (HRS) to low resistance states (LRS) is more than 60. In addition, the resistance ratio maintains even after $10^4$ seconds.
Keywords
ReRAM; Bipolar; $HfO_2$ thin film;
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1 K. R. Kim, I. S. Park, J. P. Hong, S. S. LEE, B. L. Choi, and J. H. Ahn, J. Korean Phys. Soc., 49, 548 (2006).
2 R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater., 21, 2632 (2009).   DOI
3 J. W. Yun, K. A. Cho, B. J. Park, B. H. Park, and S. S. Kim, J. Mater. Chem., 19, 2082 (2009).   DOI
4 E. Fortunato, A. Gonçalves, A. Pimentel, P. Barquinha, G. Gonçalves, L Pereira, and I. Ferreira, Appl. Phys., A96, 197 (2009).
5 S. H. Lee, H. J. Kim, D. J. Yun, S. W. Rhee, and K. J. Yong, Appl. Phys. Lett., 95, 262113 (2009).   DOI
6 L. M. Kukreja, A. K. Das, and P. Misra, Bull. Mater. Sci., 32, 247 (2009).   DOI
7 K. Nagashima, T. Yanagida, K. Oka, and T. Kawai, Appl. Phys. Lett., 94, 242902 (2009).   DOI   ScienceOn
8 P. Misra, A. K. Das, and L. M. Kukreja, Phys. Status Solidi., C7, 1718 (2010).
9 J. W. Seo, J. W. Park, K. S. Lim, J. H. Yang, and S. J. Kang, Appl. Phys. Lett., 93, 223505 (2008).   DOI
10 M. Y. Chan, T. Zhang, V. Ho, and P. S. Lee, Microelectron. Eng., 85, 2420 (2008).   DOI
11 C. Walczyk, C. Wenger, R. Sohal, M. Lukosius, A. Fox, J. Dabrowski, D. Wolansky, B. Tillack, H. J. Mussig, and T. Schroeder J. Appl. Phys., 105, 114103 (2009).   DOI
12 Y. Wang, Q. Liu, S. Long, W. Wang, Q. Wang, M. Zhang, S. Zhang, Y. Li, Q. Zuo, J. Yang, and M. Liu, Nanotechnology, 21, 045202 (2010).   DOI
13 S. H Lee, W. G. Kim, S. W. Rhee, and K. J. Yong, J. Electrochem. Soc., 155, 92 (2008).
14 P . Gonon, M . M ougenot, C . V allée, C . Jorel, V . Jousseaume, H. Grampeix, and F. E. Kamel, J. Appl. Phys., 107, 074507 (2010).   DOI