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Oxygen Pressure Dependence of Structural and Electrical Characteristics of PLZT Thin Films Prepared by a PLD  

Jang, Nak-Won (한국해양대학교 전기전자공학부)
Publication Information
Journal of Advanced Marine Engineering and Technology / v.30, no.8, 2006 , pp. 927-933 More about this Journal
Abstract
The structural and electrical characteristics of PLZT thin films fabricated onto $Pt/IrO_2/Ir/Ti/SiO_2/Si$ substrates by a pulsed laser deposition were investigated to develop the high dielectric thin films for capacitor layer of semiconductor memory devices The slim region 14/50/50 PLZT thin films were fabricated by PLD and estimated the characteristics for memory application 14/50/50 PLZT thin films have crystallize into perovskite structure at the $600^{\circ}C$ deposition temperature, 200 mTorr of oxygen pressure, and 2 $J/cm^2$ of laser energy density. In this condition PLZT thin films had the dielectric constant as high as 985, storage charge density 8.17 ${\mu}C/cm^2$ and charging time 0.20 ns. Leakage current density was less than $10^{-10}A/cm^2$ up to 5 V bias voltage.
Keywords
Dielectric constant; Ferroelectric material; Hysteresis loop; Oxygen Pressure; Pulsed laser deposition;
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