• Title/Summary/Keyword: low-power and low-voltage circuit

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Design of Low Power OLED Driving Circuit (저소비 전력 OLED 디스플레이 구동 회로 설계)

  • 신홍재;이재선;최성욱;곽계달
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.919-922
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    • 2003
  • This paper presents a novel low power driving circuit for passive matrix organic lighting emitting diodes (OLED) displays. The proposed driving method for a low power OLED driving circuit which reduce large parasitic capacitance in OLED panel only use current driving method, instead of mixed mode driving method which uses voltage pre-charge technique. The driving circuit is implemented to one chip using 0.35${\mu}{\textrm}{m}$ CMOS process with 18V high voltage devices and it is applicable to 96(R.G.B)X64, 65K color OLED displays for mobile phone application. The maximum switching power dissipation of driving power dissipation is 5.7mW and it is 4% of that of the conventional driving circuit.

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Zero-Voltage and Zero-Current-Switching (ZVZCS) Full Bridge PWM Converter with Zero Current Ripple

  • Baek, J.-W.;Cho, J.G.;Jeong, C.Y.;Yoo, D.W.
    • Proceedings of the KIPE Conference
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    • 1998.10a
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    • pp.79-84
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    • 1998
  • A novel zero voltage and zero current switching (ZVZCS) full bridge (FB) PWM converter with low output current ripple is presented. A simple auxiliary circuit added in the secondary provides ZVZCS conditions to primary switches, ZVS for leading-leg switches and ZCS for lagging-leg switches, as well as reduces the output current ripple (ideally zero ripple). The auxiliary circuit includes neither lossy components nor additional active switches which are demerits of the previously presented ZVZCS converters. Many advantages including simple circuit topology, high efficiency, low cost and low current ripple make the new converter attractive for high performance high power (>1kW) applications. The principle of operation, features and design considerations are illustrated and verified on a 2.5kW, 100KHz IGBT based experimental circuit.

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DC-DC Converter for Low-Power Power Management IC (저-전력 전력 관리 회로를 위한 DC-DC 변환기)

  • Jeon, Hyeondeok;Yun, Beomsu;Choi, Joongho
    • Journal of IKEEE
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    • v.22 no.1
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    • pp.174-179
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    • 2018
  • In this paper, design of high-efficiency DC-DC converter is presented for low-power PMIC (power management integrated circuit). As PMIC technologies for IoT and wearable devices have been continuously improved, high-efficiency energy harvesting schemes should be essential. Since the supply voltage resulting from energy harvesting is low and widely variable, design techniques to achieve high efficiency over a wide input voltage range are required. To obtain a constant switching frequency for wide input voltage range, frequency compensation circuit using supply-voltage variation sensing circuit is included. In order to obtain high efficiency performance at very low-power condition, accurate burst-mode control circuit was adopted to control switching operations. In the proposed DC-DC buck converter, output voltage is set to be 0.9V at the input voltage of 0.95~3.3V and maximum measured efficiency is up to 78% for the load current of 180uA.

A Novel 800mV Beta-Multiplier Reference Current Source Circuit for Low-Power Low-Voltage Mixed-Mode Systems (저전압 저전력 혼성신호 시스템 설계를 위한 800mV 기준전류원 회로의 설계)

  • Kwon, Oh-Jun;Woo, Son-Bo;Kim, Kyeong-Rok;Kwack, Kae-Dal
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.585-586
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    • 2008
  • In this paper, a novel beta-multiplier reference current source circuit for the 800mV power-supply voltage is presented. In order to cope with the narrow input common-mode range of the OpAmp in the reference circuit, shunt resistive voltage divider branches were deployed. High gain OpAmp was designed to compensate intrinsic low output resistance of the MOS transistors. The proposed reference circuit was designed in a standard 0.18um CMOS process with nominal Vth of 420mV and -450mV for nMOS and pMOS transistor respectively. The total power consumption including OpAmp is less than 50uW.

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A Low-Power Current-Mode CMOS Voltage Reference Circuit (저전력 전류모드 CMOS 기준전압 발생 회로)

  • 권덕기;오원석
    • Proceedings of the IEEK Conference
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    • 1998.10a
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    • pp.1077-1080
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    • 1998
  • In this paper, a simple low-power current-mode CMOS wotage reference circuit is proposed. The reference circuit of enhancement-mode MOS transistors and resistors. Temperature compensation is made by adding a current component proportional to a thermal voltage to a current component proportional to a threshold voltage. The designed circuit has been simulated using a $0.65\mu\textrm{m}$ n-well CMOS process parameters. The simulation results show that the reference circuit has a temperature coefficient less than $7.8ppm/^{\circ}C$ and a power-supply(VDD) coefficient less than 0.079%/V for a temperature range from $-30^{\circ}C$ to $130^{\circ}C$ and a VDD range from 4.0V to 12V. The power consumption is 105㎼ for VDD=5V and $T=30^{\circ}C.$ The proposed reference circuit can be designed to generate a wide range of reference voltages owing to its current-mode operation.

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A Low-voltage Vibration Energy Harvesting System with MPPT Control (MPPT 제어 기능을 갖는 저전압 진동 에너지 하베스팅 시스템)

  • An, Hyun-jeong;Kim, Ye-chan;Hong, Ye-jin;Yang, Min-Jae;Yoon, Eun-jung;Yu, Chong-gun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2015.10a
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    • pp.477-480
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    • 2015
  • In this paper a low-voltage vibration energy harvesting circuit with MPPT(Maximum Power Point Tracking) control is proposed. By employing bulk-driven technique, the minimum operating voltage of the proposed circuit is as low as 0.8V. The designed MPPT control circuit traces the maximum power point by periodically sampling the open circuit voltage of a full-wave rectifier circuit connected to the piezoelectric device output and delivers the maximum available power to load. The proposed circuit is designed using a $0.35{\mu}m\;CMOS$ process, and the chip area including pads is $1.33mm{\times}1.31mm$. Simulation results show that the maximum power efficiency of the designed circuit is 85.49%.

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Design of high speed-low voltage LVDS driver circuit with the novel ESD protection device (새로운 구조의 ESD 보호소자를 내장한 고속-저전압 LVDS Driver 설계)

  • Lee, Jae-Hyun;Kim, Kui-Dong;Kwon, Jong-Ki;Koo, Yong-Seo
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.731-734
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    • 2005
  • In this study, the design of advanced LVDS(Low Voltage Differential Signaling) I/O interface circuit with new structural low triggering ESD (Electro-Static Discharge) protection circuit was investigated. Due to the differential transmission technique and low power consumption at the same time. Maximum transmission data ratio of designed LVDS transmitter was simulated to 5Gbps. And Zener Triggered SCR devices to protect the ESD phenomenon were designed. This structure reduces the trigger voltage by making the zener junction between the lateral PNP and base of lateral NPN in SCR structure. The triggering voltage was simulated to 5.8V. Finally, we performed the layout high speed I/O interface circuit with the low triggered ESD protection device in one-chip.

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Design of a Low-Power Parallel Multiplier Using Low-Swing Technique (저 전압 스윙 기술을 이용한 저 전력 병렬 곱셈기 설계)

  • Kim, Jeong-Beom
    • The KIPS Transactions:PartA
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    • v.14A no.3 s.107
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    • pp.147-150
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    • 2007
  • This paper describes a new low-swing inverter for low power consumption. To reduce a power consumption, an output voltage swing is in the range from 0 to VDD-2VTH. This can be done by the inverter structure that allow a full swing or a swing on its input terminal without leakage current. Using this low-swing voltage technology, we proposed a low-power 16$\times$16 bit parallel multiplier. The proposed circuits are designed with Samsung 0.35$\mu$m standard CMOS process at a 3.3V supply voltage. The validity and effectiveness are verified through the HSPICE simulation.. Compared to the previous works, this circuit can reduce the power consumption rate of 17.3% and the power-delay product of 16.5%.

Analysis on the Short Circuit Current of a Low Voltage Direct Current(DC) Distribution System using PSCAD/EMTDC (PSCAD/EMTDC를 이용한 저전압 직류 배전 시스템의 단락 고장 전류 분석)

  • Ahn, Jae-Min;Jeon, Jeong-Chay;Lim, Young-Bae;Bae, Seok-Myeong;Byeon, Gil-Sung;Lee, Kyoung-Ho
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.59 no.4
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    • pp.473-476
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    • 2010
  • In this paper, we analyzed the short circuit current of a low voltage direct current distribution system. For the analysis, we performed the modeling of the low voltage direct current distribution system with a 6-pulse three-phase thyristor rectifier using the PSCAD/EMTDC, surveyed impedance of sources, transformers and distribution lines to run a simulation. A result of the simulation is that short circuit currents of the direct current distribution system with the rectifier decreased due to a thyristor-ON-resistance(Ron). But in case of the low thyristor-ON resistance, output fault current of the rectifier increased over three-phase short circuit current of an AC power system without a rectifier by regular ratio of the rectifier. Because the output fault current of the rectifier can increase over interrupting the capacity of circuit breakers, studying short circuit currents of a low voltage direct current distribution system with a rectifier is necessary for introducing the direct current distribution systems.

Ultra-Low-Power Differential ISFET/REFET Readout Circuit

  • Thanachayanont, Apinunt;Sirimasakul, Silar
    • ETRI Journal
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    • v.31 no.2
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    • pp.243-245
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    • 2009
  • A novel ultra-low-power readout circuit for a pH-sensitive ion-sensitive field-effect transistor (ISFET) is proposed. It uses an ISFET/reference FET (REFET) differential pair operating in weak-inversion and a simple current-mode metal-oxide semiconductor FET (MOSFET) translinear circuit. Simulation results verify that the circuit operates with excellent common-mode rejection ability and good linearity for a single pH range from 4 to 10, while only 4 nA is drawn from a single 1 V supply voltage.

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