• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.703-706
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• 1998

This paper presents an efficient substrate-bias generator(SBG)for low-power, high-density DRAM's The proposed SBG can supply stable voltage with switching the supply voltage of driving circuit, and it can substitude the small capacitance for the large capacitance. The charge pumping circuit of the SBG suffere no VT loss and is to be applicable to low-voltage DRAM's. Also it can reduce the power consumption to make VBB because of it's high pumping efficiency. Using biasing voltage with positive temperature coefficient, VBB level detecting circuit can detect constant value of VBB against temperature variation. VBB level during VBB maintaining period varies 0.19% and the power dissipation during this period is 0.16mw. Charge pumping circuit can make VBB level up to -1.47V using VCC-1.5V, and do charge pumping operation one and half faster than the conventional ones. The temperature dependency of the VBB level detecting circuit is 0.34%. Therefore the proposed SBG is expected to supply a stable VBB with less power consumption when it is used in low power DRAM's.

• ETRI Journal
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• 제44권5호
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• pp.837-848
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• 2022

Analog circuit design is comparatively more complex than its digital counterpart due to its nonlinearity and low level of abstraction. This study proposes a novel low-level hybrid of the sine-cosine algorithm (SCA) and modified grey-wolf optimization (mGWO) algorithm for machine learning-based design automation of CMOS analog circuits using an all-CMOS voltage reference circuit in 40-nm standard process. The optimization algorithm's efficiency is further tested using classical functions, showing that it outperforms other competing algorithms. The objective of the optimization is to minimize the variation and power usage, while satisfying all the design limitations. Through the interchange of scripts for information exchange between two environments, the SCA-mGWO algorithm is implemented and simultaneously simulated. The results show the robustness of analog circuit design generated using the SCA-mGWO algorithm, over various corners, resulting in a percentage variation of 0.85%. Monte Carlo analysis is also performed on the presented analog circuit for output voltage and percentage variation resulting in significantly low mean and standard deviation.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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• pp.221-224
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• 2004

This paper proposed an ultra low-power CMOS exponential voltage-mode circuit using the Pseudo-exponential function for realizing the exponential characteristics. The proposed circuit provides high dB-linear output voltage range at low-voltage applications. In a $0.25\;\mu m$ CMOS process, the simulations show more than 35 dB output voltage range and 26 dB with the linearity error less than $\pm0.5\;dB.$ The average current consumption is less than 80 uA. The proposed circuit can be used for the design of an extremely low-power variable gain amplifier (VGA) and automatic gain control (AGC).

• 전기학회논문지
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• 제56권12호
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• pp.2257-2261
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• 2007

A new CMOS transresistance amplifier for low-voltage analog integrated circuit design applications is presented. The proposed transresistance amplifier circuit based on common-source and negative feedback topology is compared with other recent reported transresistance amplifier. The proposed transresistance amplifier achieves high transresistance gain, gain-bandwidth with the same input/output impedance and the minimum supply voltage $2V_{DSAT}+V_T$. Hspice simulation using 1.8V TSMC $0.18{\mu}m$ CMOS technology was performed and achieved $59dB{\Omega}$ transresistance gain which is above the maximum about $18dB{\Omega}$ compared to transresistance gain of the reported circuit.

• 전기전자학회논문지
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• 제25권2호
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• pp.309-314
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• 2021

본 논문에서 제안된 에스램 사전 증폭 회로는 에스램 데이터 읽기 과정에서 감지 증폭을 활성화 하는 데 필요한 시간을 55% 감소함으로써 기존 회로 대비 읽기 속도를 현격히 개선하였다. 이는 사전 증폭 과정에서 공정 편차에 의한 트랜지스터의 성능 편차를 보상하는 고유 회로에 기인한 것이다. 뿐만 아니라, 사전 증폭으로 인한 추가 에너지 소모량을 최소화하기 위하여 사전 증폭이 필요한 경우에만 사전 증폭기를 활성화 할 수 있는 선별 활성화 회로를 제안하여 추가 에너지 소모를 4.45% 이내로 제한하였다.

• 정보처리학회논문지A
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• 제15A권5호
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• pp.243-248
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• 2008

본 논문은 다중 문턱전압 CMOS를 이용하여 저 전력 특성을 갖는 캐리 예측 가산기 (carry look-ahead adder)를 설계하였으며, 이를 일반적인 CMOS 가산기와 특성을 비교하였다. 전파 지연시간이 긴 임계경로에 낮은 문턱전압 트랜지스터를 사용하여 전파 지연시간을 감소시켰다. 전파 지연시간이 짧은 최단경로에는 높은 문턱전압 트랜지스터를 사용하여 회로전체의 소비전력을 감소시켰으며, 그 외의 논리블럭들은 정상 문턱전압의 트랜지스터를 사용하였다. 설계한 가산기는 일반적인 CMOS 회로와 비교하여 소비전력에서 14.71% 감소하였으며, 소비전력과 지연 시간의 곱에서 16.11%의 성능향상이 있었다. 이 회로는 삼성 $0.35{\mu}m$ CMOS 공정을 이용하여 설계하였으며, HSPICE를 통하여 검증하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.1093-1096
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• 1998

The architecture and circuit design of low voltage, high performance barrel shifter is proposed in this paper. The proposed architecture consists of two arrays for byte and bit rotate/shift to perform 32-bit operation and is preferred for even bigger data length as it can be adapted for 64-bit extention with no increase of number of stages. NORA logic structure was used for circuit implementation to achieve the best performance in terms of speed, power and area. The complicated cloking control has been resolved with the ingenious design of clock dirver. The circuit simulation results in 3.05ns delay, 9.37㎽ power consumption at 1V, 160MHz operation when its implemented in low power $0.5\mu\textrm{m}$ CMOS technology.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.530-533
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• 1998

In this paper, a new scheme of a boosted voltage generator (BVG) is designed for low powr DRAM's. The designed BVG can supply stable $V_{pp}$ using a new circuit operting method. This method controls charge pumping capability by switching the supply voltage and ring oscillator frequency of driving circuit, so the BVG can save area and reduce the powr dissipation during $V_{pp}$ maintaining period. The charge pumping circuit of the BVG suffers no $V_{T}$ loss and is to be applicable to low-voltage DRAM's. $V_{pp}$ level detecting circuit can detect constant value of $V_{pp}$ against temperature variation. The level of $V_{pp}$ varies -0.55%~0.098% during its maintaining period. Charge pumping circuit can make $V_{pp}$ level up to 2.95V with $V_{cc}$ =1.5V. The degecting level of $V_{pp}$ level detecting circuit changes -0.34% ~ 0.01% as temperature varies from -20 to 80.deg. C. The powr dissipation during V.$_{pp}$ maintaining period is 4.1mW.W.1mW.

• 한국산학기술학회논문지
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• 제9권5호
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• pp.1172-1177
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• 2008

채널 선택용 필터의 전압오차를 보정하기 위해 전류비교 방식의 전압안정화 회로를 설계하였다. 제안된 전류비교 방식의 전압안정화 회로는 부속회로를 첨가 할 필요가 없어 칩 면적을 최소화 할 수 있고 저전압 저전력용 채널 선택용 필터 설계에 매우 유용하다. 제안된 안정화 회로의 응용 회로로써 블루투스 통신 시스템 채널을 포함한 3개의 통신채널을 이용하였다. $0.18{\mu}m$ CMOS 공정파라메터를 사용하여 HSPICE 시뮬레이션 한 결과, 제안된 안정화 회로는 3개의 통신 채널에서 각각 $12{\mu}s$, $13{\mu}s$, $15{\mu}s$이내에서 동작할 수 있음을 확인하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.529-530
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• 2006

An efficient sensing scheme adoptable in DC-DC converter is described. The output voltage of the whole DC-DC converter is fed back to the input voltage of the sensor. The comparison in the sensor is accomplished by a current push-pull action. With a fixed reference, the comparator can be embodied based on (W/L) ratios. The current-mode scheme benefits the system better than a conventional voltage-mode one in terms of small area, low power consumption.