• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• 제16권4호
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• pp.785-792
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• 2012

In this paper, a current-voltage characteristics of n-channel junctionless and inversion mode(IM) MuGFET, and p-channel junctionless and accumulation mode(AM) MuGFET has been measured and analyzed for the application in high speed and low power switching devices. From the variation of the threshold voltage and the saturation drain current with the substrate bias voltages, their variations in IM devices are larger than junctionless devices for n-channel devices, but their variations in junctioness devices are larger than AM devices for p-channel devices. The variations of transconductance with substrate biases are more significant in p-channel devices than n-channel devices. From the characteristics of subthreshold swing, it was observed that the S value is almost independent on the substrate biases in n-channel devices and p-channel junctionless devices but it is increased with the increase of the substrate biases in p-channel AM devices. For the application in high speed and low power switching devices using the substrate biases, IM device is better than junctionless devices for n-channel devices and junctionless device is better than AM devices for p-channel devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제43권11호
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• pp.1-7
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• 2006

3-dimensional(3-D) simulations of ideal double-gate bulk FinFET were performed extensively and the electrical characteristics. were analyzed. In 3-D device simulation, we changed gate length($L_g$), height($H_g$), and channel doping concentration($N_b$) to see the behaviors of the threshold voltage($V_{th}$), DIBL(drain induced barrier lowering), and SS(subthreshold swing) with source/drain junction depth($X_{jSDE}$). When the $H_g$ is changed from 30 nm to 45nm, the variation gives a little change in $V_{th}$(less than 20 mV). The DIBL and SS were degraded rapidly as the $X_{jSDE}$ is deeper than $H_g$ at low fin body doping($1{\times}10^{16}cm^{-3}{\sim}1{\times}10^{17}cm^{-3}$). By adopting local doping at ${\sim}10nm$ under the $H_g$, the degradation could be suppressed significantly. The local doping also alleviated $V_{th}$ lowering by the shallower $X_{jSDE}\;than\;H_g$ at low fin body doping.

• Transactions of the Korean Society of Mechanical Engineers B
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• 제36권12호
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• pp.1193-1199
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• 2012

A cup burner experiment was performed to investigate the effect of the oxidizer velocity and concentration on flame instability near extinction. Heptane was used as a fuel and air diluted by nitrogen and carbon dioxide was used in the oxidizer stream. Two types of flame instabilities at the flame base and at axial downstream were observed near extinction. The instability at the flame base could be characterized by cell, swing, and rotation modes, and the cell mode changed to the rotation mode through the swing mode as the oxidizer velocity increased. To assess the parameters for the flame instability, the initial mixture strengths, Lewis number, and adiabatic flame temperature were investigated under each condition. The Lewis number might be the most important among them, but it is impossible to generalize because of the insufficient number of cases. Furthermore, the axial periodic flickering motion disappeared at low and high oxidizer velocities near extinction. This resulted from the fact that low oxidizer velocity induced evaporated fuel velocity below the critical velocity and high velocity made the reacting fuel velocity comparable.

• Korean Journal of Applied Biomechanics
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• 제19권3호
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• pp.557-566
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• 2009

This study was to investigate gender differences in muscle activities on tibialis anterior muscle, gastrocnemius and vastus medialis obliqus and outside and prime mover, antagonist and assistance mover during golf drive swing by electromyography. Ten healthy professional golfers (KPGA(n)=5, KLPGA(n)=5) volunteered in this experiment. All statistical analyses were performed using SPSS. Statistical differences were assess using t-test (p<.05). The conclusion of this study was as following. Muscle dislocation of differences, according to gender, was the highest in case of males in right side of gastrocnemius with the section from the address to the backswing of top and was the highest in case of females in tibialis anterior muscle. Results also show that prime mover was left side of low muscle in case of male with all the sections and situations and is right side low muscle in case of female. These results were significant differences. In case of males, it was though that primer mover was left side of tibialis anterior muscle with moving weight from backswing of top till the address section. In case of females, primer movers were right side of vastus medialis obliqus and tibialis anterior muscle with pushing action form the right knee to the left knee. Therefore, if they try to do the training be able to development right side of vastus medialis obliqus and tibialis anterior muscle in case of females and left side of vastus medialis obliqus and tibialis anterior muscle in case of males, it is consider that golfers' distance and direction will get better.

• Clean Technology
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• 제26권2호
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• pp.137-144
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• 2020

Metal-impregnated activated carbons were prepared via ultrasonic-assisted impregnation method for regeneration and low ammonia concentration. Magnesium and copper were selected as metals, while chloride (Cl^-) and nitrate (NO₃^-) precursors were used to impregnate the surface of activated carbon. The physical and chemical properties of the prepared adsorbents were characterized by TGA, BET, and NH₃-TPD. The ammonia breakthrough test was carried out using a fixed bed and flowing ammonia gas (1000 mg L^-1 NH₃, balanced N₂) at 100 mL min^-1, under conditions of temperature swing adsorption (TSA) and pressure swing adsorption (PSA, 0.3, 0.5, 0.7, 0.9 Mpa). The adsorption and desorption performance of ammonia were in the order of AC-Mg(Cl) > AC-Cu(Cl) > AC-Mg(N) > AC-Cu(N) > AC through NH₃-TPD and TSA and PSA processes. AC-Mg(Cl) using MgCl₂ showed the average adsorption amount of 2.138 mmol/g at TSA process. Also, AC-Mg(Cl) showed the highest initial adsorption amount of 3.848 mmol/g at PSA 0.9 Mpa. When metal impregnated the surface of the activated carbon, it was confirmed that not only physical adsorption, but also chemical adsorption increased, making enhancement in adsorption and desorption performances possible. Also, the prepared adsorbents showed stable adsorption and desorption performances despite repeated processes, confirming their applicability in the TSA and PSA processes.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.172-178
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• 2016

In this paper, we propose a sub-10 nm Ge/GaAs heterojunction-based tunneling field-effect transistor (TFET) with vertical band-to-band tunneling (BBT) operation for ultra-low-power (LP) applications. We design a stack structure that is based on the Ge/GaAs heterojunction to realize the vertical BBT operation. The use of vertical BBT operations in devices results in excellent subthreshold characteristics with a reduction in the drain-induced barrier thinning (DIBT) phenomenon. The proposed device with a channel length ($L_{ch}$) of 5 nm exhibits outstanding LP performance with a subthreshold swing (S) of 29.1 mV/dec and an off-state current ($I_{off}$) of $1.12{\times}10^{-11}A/{\mu}m$. In addition, the use of the highk spacer dielectric $HfO_2$ improves the on-state current ($I_{on}$) with an intrinsic delay time (${\tau}$) because of a higher fringing field. We demonstrate a sub-10 nm LP switching device that realizes a good S and lower $I_{off}$ at a lower supply voltage ($V_{DD}$) of 0.2 V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제46권4호
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• pp.72-78
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• 2009

This paper proposes a low phase noise ring voltage controlled oscillator(VCO) with a standard $0.13{\mu}m$ CMOS process for PLL circuit using the VCO-gain-controlled Delay cell. The proposed Delay cell architecture with a active resistor using a MOS transistor. This method can reduced a VCO gain so that improve phase noise. And, Delay cell consist of Wide-Swing Cascode current mirror, Positive Latch and Symmetric load for low phase noise. The measurement results demonstrate that the phase noise is -119dBc/Hz at 1MHz offset from 1.9GHz. The VCO gain and power dissipation are 440MHz/V and 9mW, respectively.

• Progress in Superconductivity
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• 제7권1호
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• pp.46-51
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• 2005

We have developed control electronics to operate flux-locked loop (FLL), and analog signal filters to process FLL outputs for 64-channel Double Relaxation Oscillation SQUID (DROS) magnetocardiography (MCG) system. Control electronics consisting of a preamplifier, an integrator, and a feedback, is compact and low-cost due to larger swing voltage and flux-to-voltage transfer coefficients of DROS than those of dc SQUIDs. Analog signal filter (ASF) serially chained with a high-pass filter having a cut-off frequency of 0.1 Hz, an amplifier having a gain of 100, a low-pass filter of 100 Hz, and a notch filter of 60 Hz makes FLL output suitable for MCG. The noise of a preamplifier in FLL control electronics is $7\;nV/{\surd}\;Hz$ at 1 Hz, $1.5\;nV/{\surd}\;Hz$ at 100 Hz that contributes $6\;fT/{\surd}\;Hz$ at 1 Hz, $1.3\;fT/{\surd}\;Hz$ at 100 Hz in readout electronics, and the noise of ASF electronics is $150\;{\mu}V/{\surd}\;Hz$ equivalent to $0.13\;fT/{\surd}\;Hz$ within the range of $1{\sim}100\;Hz$. When DROSs are connected to readout electronics inside a magnetically shielded room, the noise of 64-channel DROS system is $10\;fT/{\surd}\;Hz$ at 1 Hz, $5\;fT/{\surd}\;Hz$ at 100 Hz on the average, low enough to measure human MCG.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권6호
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• pp.847-853
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• 2016

Applications of Si have been increasingly exploited and extended to More-Moore, More-than-Moore, and beyond-CMOS approaches. Ge is regarded as one of the supplements for Si owing to its higher carrier mobilities and peculiar band structure, facilitating both advanced and optical applications. As an emerging metal-oxide device, the junctionless field-effect transistor (JLFET) has drawn considerable attention because of its simple process, less performance fluctuation, and stronger immunity against short-channel effects due to the absence of anisotype junctions. In this study, we investigated lateral field scalability, which is equivalent to channel-length scaling, in Si and Ge JLFETs. Through this, we can determine the usability of Si CMOS and hypothesize its replacement by Ge. For simulations with high accuracy, we performed rigorous modeling for ${\mu}_n$ and ${\mu}_p$ of Ge, which has seldom been reported. Although Ge has much higher ${\mu}_n$ and ${\mu}_p$ than Si, its saturation velocity ($v_{sat}$) is a more determining factor for maximum $I_{on}$. Thus, there is still room for pushing More-Moore technology because Si and Ge have a slight difference in $v_{sat}$. We compared both p- and n-type JLFETs in terms of $I_{on}$, $I_{off}$, $I_{on}/I_{off}$, and swing with the same channel doping and channel length/thickness. $I_{on}/I_{off}$ is inherently low for Ge but is invariant with $V_{DS}$. It is estimated that More-Moore approach can be further driven if Si is mounted on a JLFET until Ge has a strong possibility to replace Si for both p- and n-type devices for ultra-low-power applications.