1 |
R. Quay, C. Moglestue, V. Palankovski, and S. Selberherr, "A temperature dependent model for the saturation velocity in semiconductor materials," Mater. Sci. Semicond. Process., vol. 3, no. 1, pp. 149-155, Mar. 2000.
DOI
|
2 |
C. Jacoboni, F. Nava, C. Canali, and G. Ottaviani "Electron drift velocity and diffusivity in germanium," Phys. Rev. B: Condens. Matter, vol. 24, no. 2, pp. 1014-1026, Jul. 1981.
DOI
|
3 |
C. Canali, G. Ottaviani and A. Quaranta, "Drift velocity of electrons and holes and associated anisotropic effects in silicon." J. Phys. Chem. Solids, vol. 32, no. 8, pp. 1707-1720, Nov. 1970.
DOI
|
4 |
S. Lee and S. Lee, "Accurate RF C-V method to extract effective channel length and parasitic capacitance of deep-submicron LDD MOSFETs," J. Semicond. Technol. Sci., vol. 15, no. 6, pp. 653-657, Dec. 2015.
DOI
|
5 |
J. Feng, Y. Liu, P. B. Griffin, and J. D. Plummer, "Integration of germanium-on-insulator and silicon MOSFETs on a silicon substrate," IEEE Trans. Electron Devices, vol. 27, no. 11, pp. 911-913, Nov. 2006.
DOI
|
6 |
S. Kim, J. Seo, Y. Yoon, G. Yoo, Y. Kim, H. Eun, H. Kang, J. Kim, S. Cho, J. Lee, and I. Kang, "Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors," J. Semicond. Technol. Sci., vol. 14, no. 5, pp. 508-517, Oct. 2014.
DOI
|
7 |
F. Jazaeri, L. Barbut, A. Koukab, and J. Sallese, "Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime," Solid-State Electron., vol. 82, pp. 103-110, Apr. 2013.
DOI
|
8 |
G. K. Celler and S. Cristoloveanu, "Frontiers of silicon-on-insulator," J. Appl. Phys., vol. 93, no. 9, pp. 4955-4978, May 2013.
|
9 |
C. Sun, R. Liang, L. Liu, J. Wang, and J. Xu, "Effect of channel doping profiles on performance of germanium-on-insulator based junctionless transistors." Proc. 2015 IEEE International Symposium on Next-Generation Electronics (ISNE), Taipei, Taiwan, May 4-6, 2015, pp. 1-3.
|
10 |
International Technology Roadmap for Semiconductors (ITRS), 2013 Edition, Online available at http://www.itrs2.net.
|
11 |
P. P. Debye and E. M. Conwell, "Electrical properties of n-type germanium," Phys. Rev. Appl, vol. 93, no. 4, pp. 693-706, Feb. 1954.
|
12 |
S. Lee, H. Kim, J. Lee, I. Yu, J. Lee and C. Hwang, "Effects of and as oxygen sources on the atomic layer deposition of gate dielectrics at different deposition temperatures," J. Mater. Chem. C, vol. 24, no. 2, pp. 2558-2568, Jan. 2014.
|
13 |
J. P. Colinge, C. W. Lee, N. Dehdashti, R. Yan, I. Ferain, P. Razavi, A. Kranti, and R. Yu, Junctiobnless Transistors: Physics and Properties, Springer-Verlag, Berlin, Germany, 2011.
|
14 |
C. W. Lee, F. Isabelle, A. Aryan, Y. Ran, D. Nima, R. Pedram, and J. P. Colinge, "Performance estimation of junctionless multigate transistors," Solid-State Electron., vol. 54, no.2, pp. 97-103, Feb. 2010.
DOI
|
15 |
J. P. Colinge, C. W. Lee, A. Afzalian, N. Dehdashti, R. Yan, I. Ferain, P. Razavi, B. O'Neill, A. Blake, M. White, A. Kelleher, B. McCarthy, and R. Murphy, "SOI gated resistor: CMOS without junctions," Proc. 2009 IEEE International SOI Conference, Foster City, USA, Oct. 5-8, 2009, pp. 1-2.
|
16 |
S. M. Sze and J. C. Irvin, "Resistivity, mobility and impurity levels in GaAs, Ge, and Si at ," Solid State Electron., vol. 11, no. 6, pp. 599-602, Jan. 1968.
DOI
|
17 |
D. M. Caughey and R. E. Thomas, "Carrier mobilities in silicon empirically related to doping and field," Proc. IEEE, vol. 55, no. 12, pp. 2192-2193, Sep. 1967.
DOI
|
18 |
G. Hellings, G. Eneman, R. Krom, B. D. Jaeger, J. Mitard, A. D. Keersgieter, T. Hoffmann, M. Meuris, and K. D. Meyer, "Electrical TCAD simulations of a Germanium pMOSFET technology," IEEE Trans. Electron Devices, vol. 57, no. 10, pp. 2539-2546, Oct. 2010.
DOI
|
19 |
S. A. Hareland, S. Jallepalli, G. Chindalore, W. K. Shih, A. F. Tasch, Jr., and C. M. Maziar, "A Simple Model for Quantum Mechanical Effects in Hole Inverson Layers in Silicon PMOS Device," IEEE Transactions On Electron Devices," vol. 44, no. 7, pp. 1172-1173, Jul. 1997.
DOI
|
20 |
L. Reggiani, C. Canali, F. Nava, and G. Ottaviani, "Hole drift velocity in germanium," Phys. Rev. B: Condens. Matter, vol. 16, no. 6, pp. 2781-2791, Sep. 1977.
DOI
|