• Title/Summary/Keyword: low leakage

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No-fat diet for treatment of donor site chyle leakage in vascularized supraclavicular lymph node transfer

  • Seong, Ik Hyun;Park, Jin-Woo;Woo, Kyong-Je
    • Archives of Craniofacial Surgery
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    • v.21 no.6
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    • pp.376-379
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    • 2020
  • Supraclavicular lymph node (SCLN) flap is a common donor site for vascularized lymph node transfer for the treatment of lymphedema. Chyle leakage is a rare but serious complication after harvesting SCLN flap in the neck. We report a case of chyle leakage at the SCLN donor site and its successful management. A 52-year-old woman underwent SCLN transfer for treatment of lower extremity lymphedema. After starting a regular diet and wheelchair ambulation on the 3rd postoperative day, the amount of drainage at the donor site increased (8-62 mL/day) with the color becoming milky, which suggested a chyle leak. Despite starting a low-fat diet on the 4th postoperative day, the chyle leakage persisted (70 mL/day). The patient was started on fat-free diet on the 5th postoperative day. The amount of drainage started to decrease and the drain color became more clear within 24 hours. The drainage amount remained less than 10 mL/day from the 8th postoperative day, and we removed the drain on the 12th postoperative day. There was no seroma or other wound complications at follow-up 4 weeks after the operation. The current case demonstrates that a fat-free diet can be a first-line treatment for low output chyle leakage after a SCLN flap.

A Study on High Performance Lateral Super Barrier Rectifier for Integration in BCD (Bipolar CMOS DMOS) Platform (BCD Platform과의 집적화에 적합한 고성능 Lateral Super Barrier Rectifier의 연구)

  • Kim, Duck-Soo;Lee, Hi-Deok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.6
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    • pp.371-374
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    • 2015
  • This paper suggests a high performance lateral super barrier rectifier (Lateral SBR) device which has the advantages of both Schottky diode and pn junction, that is, low forward voltage and low leakage current, respectively. Advantage of the proposed lateral SBR is that it can be easily implemented and integrated in current BCD platform. As a result of simulation using TCAD, BVdss = 48 V, $V_F=0.38V$ @ $I_F=35mA$, T_j = $150^{\circ}C$ were obtained with very low leakage current characteristic of 3.25 uA.

Self-Power Gating Technique For Low Power Asynchronous Circuit

  • Mai, Kim-Ngan Thi;Vo, Huan Minh
    • Journal of IKEEE
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    • v.22 no.3
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    • pp.548-557
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    • 2018
  • In this paper, Asynchronous Self-Power Gating technique (ASPG) is used to reduce consumption power in asynchronous digital watch application. The power gating control signal is automatically generated by internal system operation characteristics instead of using replica circuit delay or four-phase handshaking protocol. Isolation cell is designed to insert it between power gating domain and normal operation domain. By using self-power gating circuit, asynchronous digital watch application consumes very low power and maintains data during sleep mode. The comparison results show the proposed ASPG technique saves leakage power up to 40.47% and delay time is reduced to 71% compared to the conventional circuit.

Way-set Associative Management for Low Power Hybrid L2 Cache Memory (고성능 저전력 하이브리드 L2 캐시 메모리를 위한 연관사상 집합 관리)

  • Jung, Bo-Sung;Lee, Jung-Hoon
    • IEMEK Journal of Embedded Systems and Applications
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    • v.13 no.3
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    • pp.125-131
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    • 2018
  • STT-RAM is attracting as a next generation Non-volatile memory for replacing cache memory with low leakage energy, high integration and memory access performance similar to SRAM. However, there is problem of write operations as the other Non_volatile memory. Hybrid cache memory using SRAM and STT-RAM is attracting attention as a cache memory structure with lowe power consumption. Despite this, reducing the leakage energy consumption by the STT-RAM is still lacking access to the Dynamic energy. In this paper, we proposed as energy management method such as a way-selection approach for hybrid L2 cache fo SRAM and STT-RAM and memory selection method of write/read operation. According to the simulation results, the proposed hybrid cache memory reduced the average energy consumption by 40% on SPEC CPU 2006, compared with SRAM cache memory.

Efficiency Improvement for Concentrated Flux IPM Motors for Washing Machines

  • Yoon, Keun-Young;Kwon, Byung-Il
    • Journal of Electrical Engineering and Technology
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    • v.9 no.4
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    • pp.1277-1282
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    • 2014
  • Concentrated flux interior permanent magnet (CFIPM) motors have the advantage that their utilization of flux linkage is more efficient than that of general IPM motors and CFIPM motors are suitable for washing machine motors, which demand low-speed, high-torque specifications. However, low efficiency occurs in the low-speed high-torque mode considering the high-speed operation for spin mode. This paper proposes a magnet overhang structure between the rotor core that reduces leakage flux and improves efficiency for a CFIPM in wash mode. Optimization of the 3D design of magnet overhang structures is performed to improve the efficiency with the same quantity of permanent magnets. The validity of the optimal design is experimentally verified through the fabrication of prototypes.

An Experimental Study on the Efficiency of the Water Hydraulic Piston Pump System driven by an Electric Inverter (전기 인버터 구동 수압 피스톤 펌프 시스템의 효율 성능에 관한 실험적 연구)

  • Ham, Y.B.;Park, J.H.;Kim, S.D.
    • Transactions of The Korea Fluid Power Systems Society
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    • v.3 no.4
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    • pp.1-7
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    • 2006
  • A water hydraulic pump is likely to have serious problems of high leakage, friction and low energy efficiency. A water hydraulic pump has commonly a fixed displacement type and its outlet flow is adjusted by controlling rotation speed of the pump, which can be implemented by using an electric inverter. This study aims to investigate energy efficiency of the water hydraulic pump system which is driven by an electric inverter. The study is based on the experimental results. The pump which is used in the study shows relatively good efficiency and low leakage, low friction as well. The reasons for the good performance of pump is also investigated.

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Diode and MOSFET Properties of Trench-Gate-Type Super-Barrier Rectifier with P-Body Implantation Condition for Power System Application

  • Won, Jong Il;Park, Kun Sik;Cho, Doo Hyung;Koo, Jin Gun;Kim, Sang Gi;Lee, Jin Ho
    • ETRI Journal
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    • v.38 no.2
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    • pp.244-251
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    • 2016
  • In this paper, we investigate the electrical characteristics of two trench-gate-type super-barrier rectifiers (TSBRs) under different p-body implantation conditions (low and high). Also, design considerations for the TSBRs are discussed in this paper. The TSBRs' electrical properties depend strongly on their respective p-body implantation conditions. In the case of the TSBR with a low p-body implantation condition, it exhibits MOSFET-like properties, such as a low forward voltage ($V_F$) drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR with a high p-body implantation condition, it exhibits pn junction diode.like properties, such as a high $V_F$, low reverse leakage current, and high peak reverse recovery current owing to a minority carrier operation. As a result, the TSBR with a low p-body implantation condition is capable of operating as a MOSFET, and the TSBR with a high p-body implantation condition is capable of operating as either a pn junction diode or a MOSFET, but not both at the same time.

Design and Analysis of 16 V N-TYPE MOSFET Transistor for the Output Resistance Improvement at Low Gate Bias (16 V 급 NMOSFET 소자의 낮은 게이트 전압 영역에서 출력저항 개선에 대한 연구)

  • Kim, Young-Mok;Lee, Han-Sin;Sung, Man-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.2
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    • pp.104-110
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    • 2008
  • In this paper we proposed a new source-drain structure for N-type MOSFET which can suppress the output resistance reduction of a device in saturation region due to soft break down leakage at high drain voltage when the gate is biased around relatively low voltage. When a device is generally used as a switch at high gate bias the current level is very important for the operation. but in electronic circuit like an amplifier we should mainly consider the output resistance for the stable voltage gain and the operation at low gate bias. Hence with T-SUPREM simulator we designed devices that operate at low gate bias and high gate bias respectively without a extra photo mask layer and ion-implantation steps. As a result the soft break down leakage due to impact ionization is reduced remarkably and the output resistance increases about 3 times in the device that operates at the low gate bias. Also it is expected that electronic circuit designers can easily design a circuit using the offered N-type MOSFET device with the better output resistance.

Waveform analysis of leakage current on silicon insulator for various environment condition variation (환경조건변화에 대한 실리콘애자의 누설전류 파형분석)

  • Park, Jae-Jun
    • The Journal of Information Technology
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    • v.7 no.2
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    • pp.69-76
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    • 2004
  • This paper presents the results of spectral analysis about waveforms and leakage current waveforms on contaminated silicon insulators under various environment conditions.(salt fog, clean fog, rain). The larger the leakage current during 200ms, the higher the power spectrum at 60Hz. If contaminated insulators suffers from high salt density fog, the leakage current occurs with high crest value intermittently, results in the low spectrum. Analysis of leakage current data showed that this electrical activity was characterized by transient arcing behavior contaminants are deposited on the insulator surface during salt fog tests. This provides a path for the leakage current to flow along the surface of the insulator. It is important to have an indication of the pollution accumulation in order to evaluate the test performance of a particular insulator. If the drop in surface resistivity is severe enough, then the leakage current may escalate into service interrupting flashover that degrade power quality.

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A Study on Characteristics of a Compensator System for Swash Plate Type Axial Piston Pump (사판식 액시얼 피스톤 펌프의 가변용량 시스템의 특성에 관한 연구)

  • Kim, Shin;Oh, Suk-Hyung;Jung, Jae-Youn
    • Tribology and Lubricants
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    • v.14 no.4
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    • pp.15-22
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    • 1998
  • Recently, the importance of variable displacement piston pump is increasing in industrial world. Especially, most consumers require various range of pressures and flow rates. Pressure compensator is a system controlling flow rate in piston pump at low cost and, therefore, satisfies the need of consumers. However, the system has serious problems, such as response and leakage. The response and leakage are affected by clearance between actuator piston and cylinder, roughness of surface, and spool overlap. In this paper, these effects are investigated experimentally, and optimal clearance and chamfer is obtained. While diameter of cylinder is fixed and diameter of actuator piston is changed in this experiment, response and leakage are measured. Also parameters such as roughness and processing accuracy are changed for piston of fixed clearance. Experimental setup modelled into several parts of actuator piston, cylinder, spool, and swash plate. Input pressure is changed by function generator and proportional valve. The result of this experiment shows that leakage increases very much in proportion to the increase of clearance, and especially leakage occurs enormously when clearance is more than 0.002. The response is not good because as clearance increases leakage increases and as clearance decreases viscous damping effect increases. Accordingly, it is found out that optimal clearance range exists for tile response, within about 0.0012∼0.0014, at this time. Futhermore, the better roughness and geometrical accuracy of actuator piston are, the smaller are leakage and friction. The paper informs that response and leakage are influenced by and geometrical accuracy of actuator piston, roughness of surface, and the clearance between actuator piston and cylinder, and that optimal design of actuator piston in the pressure compensator is possible.