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http://dx.doi.org/10.4218/etrij.16.2515.0024

Diode and MOSFET Properties of Trench-Gate-Type Super-Barrier Rectifier with P-Body Implantation Condition for Power System Application  

Won, Jong Il (ICT Materials & Components Research Laboratory, ETRI)
Park, Kun Sik (ICT Materials & Components Research Laboratory, ETRI)
Cho, Doo Hyung (Department of Electronic Engineering, Sogang University)
Koo, Jin Gun (ICT Materials & Components Research Laboratory, ETRI)
Kim, Sang Gi (ICT Materials & Components Research Laboratory, ETRI)
Lee, Jin Ho (ICT Materials & Components Research Laboratory, ETRI)
Publication Information
ETRI Journal / v.38, no.2, 2016 , pp. 244-251 More about this Journal
Abstract
In this paper, we investigate the electrical characteristics of two trench-gate-type super-barrier rectifiers (TSBRs) under different p-body implantation conditions (low and high). Also, design considerations for the TSBRs are discussed in this paper. The TSBRs' electrical properties depend strongly on their respective p-body implantation conditions. In the case of the TSBR with a low p-body implantation condition, it exhibits MOSFET-like properties, such as a low forward voltage ($V_F$) drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR with a high p-body implantation condition, it exhibits pn junction diode.like properties, such as a high $V_F$, low reverse leakage current, and high peak reverse recovery current owing to a minority carrier operation. As a result, the TSBR with a low p-body implantation condition is capable of operating as a MOSFET, and the TSBR with a high p-body implantation condition is capable of operating as either a pn junction diode or a MOSFET, but not both at the same time.
Keywords
Schottky diode; pn junction diode; super-barrier rectifier; power device; SBR; TDMOS;
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Times Cited By KSCI : 2  (Citation Analysis)
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