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http://dx.doi.org/10.4313/JKEM.2015.28.6.371

A Study on High Performance Lateral Super Barrier Rectifier for Integration in BCD (Bipolar CMOS DMOS) Platform  

Kim, Duck-Soo (Department of Electronic Engineering, Chungnam National University)
Lee, Hi-Deok (Department of Electronic Engineering, Chungnam National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.28, no.6, 2015 , pp. 371-374 More about this Journal
Abstract
This paper suggests a high performance lateral super barrier rectifier (Lateral SBR) device which has the advantages of both Schottky diode and pn junction, that is, low forward voltage and low leakage current, respectively. Advantage of the proposed lateral SBR is that it can be easily implemented and integrated in current BCD platform. As a result of simulation using TCAD, BVdss = 48 V, $V_F=0.38V$ @ $I_F=35mA$, T_j = $150^{\circ}C$ were obtained with very low leakage current characteristic of 3.25 uA.
Keywords
BCD; Power rectifier; SBR; High performance rectifier;
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