1 |
B. Murara, F. Bertotti, and G. A. Vignola, Smart Power ICs (Springer, 2002) p. 9-15.
|
2 |
J. Baliga, Fundamentals of Power Semiconductor Devices, (Springer, 1999) p. 167-177.
|
3 |
J. Baliga, Fundamentals of Power Semiconductor Devices, (Springer, 1999) p. 203-211.
|
4 |
J. P Colinge and C. A. Colinge, Physics of Semiconductor Devices, 95 (2002).
|
5 |
www.ixys.com/Documents/AppNotes/IXAN0044.pdf
|
6 |
Baliga and B. Jayant, Analysis of a High-voltage Merged p-i-n/Schottky (MPS) Rectifier, 407 (1987).
|
7 |
TMBS-http://www.vishay.com/diodes/rectifiers/schottky-tmbs
|
8 |
Rodov, V. Super Barrier Rectifier - A New Gen eration of Power Diode (APD Semiconductor Inc, 2007 IEEE
|
9 |
http://onsemi.com/pub_link/Collateral/AMIS-30663-D.PDF
|
10 |
Q. Huang and G.A.J. Amaratunga, Sol. St. Elec., 38, 977 (1995).
DOI
|
11 |
P. Chang, G. C. Chern, W.Y.W. Hsuech, and V. Rodov, US Patent 6448160; September 10, 2002
|
12 |
J. Baliga, Fundamentals of Power Semiconductor Devices, (Springer, 1999) p. 91-113.
|