• Title/Summary/Keyword: logic gates

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Macro-model for Estimation of Maximum Power Dissipation of CMOS Digital Gates (CMOS 디지털 게이트의 최대소모전력 예측 매크로 모델)

  • Kim, Dong-Wook
    • The Transactions of the Korean Institute of Electrical Engineers A
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    • v.48 no.10
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    • pp.1317-1326
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    • 1999
  • As the integration ratio and operation speed increase, it has become an important problem to estimate the dissipated power during the design procedure as a method to reduce the TTM(time to market). This paper proposed a prediction model to estimate the maximum dissipated power of a CMOS logic gate. This model uses a calculational method. It was formed by including the characteristics of MOSFETs of which a CMOS gate consists, the operational characteristics of the gate, and the characteristics of the input signals. As the modeling process, a maximum power estimation model for CMOS inverter was formed first, and then a conversion model to convert a multiple input CMOS gate into a corresponding CMOS inverter was proposed. Finally, the power model for inverter was applied to the converted result so that the model could be applied to a general CMOS gate. For experiment, several CMOS gates were designed in layout level by $0.6{\mu}m$ layout design rule. The result by comparing the calculated results with those from HSPICE simulations for the gates showed that the gate conversion model has within 5% of the relative error rate to the SPICE and the maximum power estimation model has within 10% of the relative error rate. Thus, the proposed models have sufficient accuracies. Also in calculation time, the proposed models was more than 30 times faster than SPICE simulation. Consequently, it can be said that the proposed model could be used efficiently to estimate the maximum dissipated power of a CMOS logic gate during the design procedure.

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Delay Time Modeling for ED MOS Logic LSI and Multiple Delay Logic Simulator (ED MOS 논리 LSI 의 지연시간 모델링과 디자인 논리 시뮬레이터)

  • 김경호;전영준;이창우;박송배
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.24 no.4
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    • pp.701-707
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    • 1987
  • This paper is concerned with an accurate delay time modling of the ED MOS logic gates and its application to the multiple delay logic simulator. The proposed delay model of the ED MOS logic gate takes account of the effects of not only the loading conditions but also the slope of the input waveform. Defining delay as the time spent by the current imbalance of the active inverter to charge and discharge the output load, with respect to physical reference levels, rise and fall model delay times are obtained in an explicit formulation, using optimally weighted imbalance currents at the end points of the voltage transition. A logic simulator which uses multiple rise/fall delays based on the model as decribed in the above has been developed. The new delay model and timing verification method are evaluated with repect to delay accuracy and execution time.

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Realizing Mixed-Polarity MCT gates using NCV-|v1 > Library (NCV-|v1 >라이브러리를 이용한 Mixed-Polarity MCT 게이트 실현)

  • Park, Dong-Young;Jeong, Yeon-Man
    • The Journal of the Korea institute of electronic communication sciences
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    • v.11 no.1
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    • pp.29-36
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    • 2016
  • Recently a new class of quantum gate called $NCV-{\mid}v_1$ > library with low cost realizable potentialities is being watched with keen interest. The $NCV-{\mid}v_1$ > MCT gate is composed of AND cascaded-$CV-{\mid}v_1$ > gates to control the target qudit and its adjoint gates to erase junk ones. This paper presents a new symmetrical duality library named $NCV^{\dag}-{\mid}v_1$ > library corresponding to $NCV-{\mid}v_1$ > library. The new $NCV^{\dag}-{\mid}v_1$ > library can be operated on OR logic under certain conditions. By using both the $NCV-{\mid}v_1$ > and $NCV^{\dag}-{\mid}v_1$ > libraries it is possible to realize MPMCT gates, SOP and POS type synthesis of quantum logic circuits with extremely low cost, and expect dual gate property caused by different operational attributes with respect to forward and backward operations.

The Design of the Ternary Sequential Logic Circuit Using Ternary Logic Gates (3치 논리 게이트를 이용한 3치 순차 논리 회로 설계)

  • 윤병희;최영희;이철우;김흥수
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.10
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    • pp.52-62
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    • 2003
  • This paper discusses ternary logic gate, ternary D flip-flop, and ternary four-digit parallel input/output register. The ternary logic gates consist of n-channel pass transistors and neuron MOS(νMOS) threshold inverters on voltage mode. They are designed with a transmission function using threshold inverter that are in turn, designed using Down Literal Circuit(DLC) that has various threshold voltages. The νMOS pass transistor is very suitable gate to the multiple-valued logic(MVL) and has the input signal of the multi-level νMOS threshold inverter. The ternary D flip-flop uses the storage element of the ternary data. The ternary four-digit parallel input/output register consists of four ternary D flip-flops which can temporarily store four-digit ternary data. In this paper, these circuits use 3.3V low power supply voltage and 0.35m process parameter, and also represent HSPICE simulation result.

Design of Quaternary Logic gate Using Double Pass-transistor Logic with neuron MOS Threshold gate (뉴런 MOS 임계 게이트를 갖는 2중 패스-트랜지스터 논리를 이용한 4치 논리 게이트 설계)

  • Park, Soo-Jin;Yoon, Byoung-Hee;Kim, Heung-Soo
    • Journal of IKEEE
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    • v.8 no.1 s.14
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    • pp.33-38
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    • 2004
  • A multi-valued logic(MVL) pass gate is an important element to configure multi-valued logic. In this paper, we designed the Quaternary MIN(QMIN)/negated MIN(QNMIN) gate, the Quaternary MAX(QMAX)/negated MAX(QNMAX) gate using double pass-transistor logic(DPL) with neuron $MOS({\nu}MOS)$ threshold gate. DPL is improved the gate speed without increasing the input capacitance. It has a symmetrical arrangement and double-transmission characteristics. The threshold gates composed by ${\nu}MOS$ down literal circuit(DLC). The proposed gates get the valued to realize various multi threshold voltages. In this paper, these circuits are used 3V power supply voltage and parameter of 0.35um N-Well 2-poly 4-metal CMOS technology, and also represented HSPICE simulation results.

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Design of Low-Latency Architecture for AB2 Multiplication over Finite Fields GF(2m) (유한체 GF(2m)상의 낮은 지연시간의 AB2 곱셈 구조 설계)

  • Kim, Kee-Won;Lee, Won-Jin;Kim, HyunSung
    • IEMEK Journal of Embedded Systems and Applications
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    • v.7 no.2
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    • pp.79-84
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    • 2012
  • Efficient arithmetic design is essential to implement error correcting codes and cryptographic applications over finite fields. This article presents an efficient $AB^2$ multiplier in GF($2^m$) using a polynomial representation. The proposed multiplier produces the result in m clock cycles with a propagation delay of two AND gates and two XOR gates using O($2^m$) area-time complexity. The proposed multiplier is highly modular, and consists of regular blocks of AND and XOR logic gates. Especially, exponentiation, inversion, and division are more efficiently implemented by applying $AB^2$ multiplication repeatedly rather than AB multiplication. As compared to related works, the proposed multiplier has lower area-time complexity, computational delay, and execution time and is well suited to VLSI implementation.

All-Optical Binary Full Adder Using Logic Operations Based on the Nonlinear Properties of a Semiconductor Optical Amplifier

  • Kaur, Sanmukh;Kaler, Rajinder-Singh;Kamal, Tara-Singh
    • Journal of the Optical Society of Korea
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    • v.19 no.3
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    • pp.222-227
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    • 2015
  • We propose a new and potentially integrable scheme for the realization of an all-optical binary full adder employing two XOR gates, two AND gates, and one OR gate. The XOR gate is realized using a Mach-Zehnder interferometer (MZI) based on a semiconductor optical amplifier (SOA). The AND and OR gates are based on the nonlinear properties of a semiconductor optical amplifier. The proposed scheme is driven by two input data streams and a carry bit from the previous less-significant bit order position. In our proposed design, we achieve extinction ratios for Sum and Carry output signals of 10 dB and 12 dB respectively. Successful operation of the system is demonstrated at 10 Gb/s with return-to-zero modulated signals.

A Study of The Voltage Transfer Function Dependent On Input Conditions For An N-Input NAND Gate (N-Input NAND Gate에서 입력조건에 따른 Voltage Transfer Function에 관한 연구)

  • Kim In-Mo;Song Sang-Hun;Kim Soo-Won
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.10
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    • pp.510-514
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    • 2004
  • In this paper, we analytically examine the voltage transfer function dependent on input conditions for an N-Input NAND Gate. The logic threshold voltage, defined as a voltage at which the input and the output voltage become equal, changes as the input condition changes for a static NAND Gate. The logic threshold voltage has the highest value when all the N-inputs undergo transitions and it has the lowest value when only the last input connected to the last NMOS to ground, makes a transition. This logic threshold voltage difference increases as the number of inputs increases. Therefore, in order to provide a near symmetric voltage transfer function, a multistage N-Input Gate consisting of 2-Input Logic Gates is desirable over a conventional N-Input Gate.

A Study on Fault Detection Tests for Combintional Logic Networks (조합논리회로의 결함검출시험에 관한 연구)

  • 최흥문
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.14 no.6
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    • pp.10-15
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    • 1977
  • This paper proposes a simple and systematic method for the generation of the fault detection test sets for the combinational logic networks. Based on tile path sensitizing concept, the test patterns for the primary input gates of the network are defined, and then it is shown that, arranging these predefined test patterns according to the path sensitizing characteristics of the given network sturctures, the minimal complete test sets for the fan-out free combinational networks can be found easily. It is also shown that, taking into account the fan-out paths sensitizing compatibility, the proposed method can be extended to the irredundant reconvergent fan-out networks.

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All-Optical AND Logic Gates using Metal-Free Phthalocyanine Films (프탈로시안 박막소자를 이용한 순광학적 AND Logic Gate)

  • 유연석;오세권;신정록;김동균
    • Proceedings of the Optical Society of Korea Conference
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    • 2001.02a
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    • pp.150-151
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    • 2001
  • 광컴퓨터에 있어서 비선형 물질의 역할은 매우 중요하다. 그러한 비선형 물질들은 빛과 상호작용하고 빛의 성질을 변조시킨다. 광컴퓨터의 몇몇 구성 성분들은 그들이 작용하는데 있어서 중요한 비선형물질을 필요로 한다. 하지만 모든 광학적 장치들의 사용이 사실상 제한되는 것은 현재 이용할 수 있는 비선형 광물질이 비효과적이고 응답과 스위칭에 대해서 많은 에너지를 필요로 하기 때문이다. (중략)

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