A Study of The Voltage Transfer Function Dependent On Input Conditions For An N-Input NAND Gate

N-Input NAND Gate에서 입력조건에 따른 Voltage Transfer Function에 관한 연구

  • 김인모 (중앙대학교 전자전기공학부) ;
  • 송상헌 (중앙대학교 전자전기공학부) ;
  • 김수원 (고려대학교 전자컴퓨터공학과)
  • Published : 2004.10.01

Abstract

In this paper, we analytically examine the voltage transfer function dependent on input conditions for an N-Input NAND Gate. The logic threshold voltage, defined as a voltage at which the input and the output voltage become equal, changes as the input condition changes for a static NAND Gate. The logic threshold voltage has the highest value when all the N-inputs undergo transitions and it has the lowest value when only the last input connected to the last NMOS to ground, makes a transition. This logic threshold voltage difference increases as the number of inputs increases. Therefore, in order to provide a near symmetric voltage transfer function, a multistage N-Input Gate consisting of 2-Input Logic Gates is desirable over a conventional N-Input Gate.

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References

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