• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.271-271
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• 2006

The structural, dielectric and piezoelectric properties of $[Bi_{1-x}(Na_{0.7-x}K_{0.2}Li_{0.1})]_{0.5}BaxTiO_3$ (BNKLBxT) ceramics were studied for the compositional range, x = 0-0.08. The samples were prepared by conventional sintering technique. The result of X-ray diffraction (XRD) suggest that $Ba^{2+}$ diffuse into the $[Bi(Na_{0.7}K_{0.2}Li_{0.1})]_{0.5}TiO_3$ (BNKLT) lattices to form a solid solution with a single phase perovskite structure. The ceramic show excellent piezoelectric and ferroelectric properties, and optimum properties measured are as follows: piezoelectric constant $d_{33}=230pC/N$, planar electromechanical coupling factor $k_p\;=\;40.3%$, remanent polarization $P_r\;=\;30\;{\mu}C/cm^2$, and coercive field $E_c\; =\;2.5\;kV/mm$, respectively.

• Journal of Sensor Science and Technology
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• v.31 no.5
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• pp.312-317
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• 2022

Piezoelectric energy harvesting has attracted increasing attention over the last decade as a means for generating sustainable and long-lasting energy from wasted mechanical energy. To develop self-powered wearable devices, piezoelectric materials should be flexible, stretchable, and bio-eco-friendly. This study proposed the fabrication of stretchable piezoelectric composites via dispersing perovskite-structured BaTiO₃ nanoparticles inside an Ecoflex polymeric matrix. In particular, the stretchable piezoelectric sensor array was fabricated via a simple and cost-effective spin-coating process by exploiting the piezoelectric composite comprising of BaTiO₃ nanoparticles, Ecoflex matrix, and stretchable Ag coated textile electrodes. The fabricated sensor generated an output voltage of ~4.3 V under repeated compressing deformations. Moreover, the piezoelectric sensor array exhibited robust mechanical stability during mechanical pushing of ~5,000 cycles. Finite element method with multiphysics COMSOL simulation program was employed to support the experimental output performance of the fabricated device. Finally, the stretchable piezoelectric sensor array can be used as a self-powered touch sensor that can effectively detect and distinguish mechanical stimuli, such as pressing by a human finger. The fabricated sensor demonstrated potential to be used in a stretchable, lead-free, and scalable piezoelectric sensor array.

• Korean Journal of Materials Research
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• v.22 no.1
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• pp.35-41
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• 2012

Presently, the most promising family of lead-free piezoelectric ceramics is based on $K_{0.5}Na_{0.5}NbO_3$(KNN). Lithium, silver and antimony co-doped KNN ceramics show high piezoelectric properties at room temperature, but often suffer from abnormal grain growth. In the present work, the $(Ba_{0.85}Ca_{0.15})(Ti_{0.88}Zr_{0.12})O_3$ component, which has relaxor ferroelectric characteristics, was doped to suppress the abnormal grain growth. To investigate this effect, Lead-Free $0.95(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}NbO_3-(0.05-x)AgSbO_3-x(Ba_{0.85}Ca_{0.15})(Ti_{0.88}Zr_{0.12})O_3$[KNLN-AS-xBCTZ] piezoelectric ceramics were synthesized by ball mill and nanosized-milling processes in lead-Free $0.95(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}NbO_3-(0.05-x)AgSbO_3$ in order to suppress the abnormal grain growth. The nanosized milling process of calcined powders enhanced the sintering density. The phase structure, microstructure, and ferroelectric and piezoelectric properties of the KNLN-AS ceramics were systematically investigated. XRD patterns for the doped and undoped samples showed perovskite phase while tetragonality was increased with increasing BCZT content, which increase was closely related to the decrease of TO-T. Dense and uniform microstructures were observed for all of the doped BCZT ceramics. After the addition of BCTZ, the tetragonal-cubic and orthorhombic-tetragonal phase transitions shifted to lower temperatures compared to those for the pure KNNL-AS. A coexistence of the orthorhombic and tetragonal phases was hence formed in the ceramics with x = 0.02 mol at room temperature, leading to a significant enhancement of the piezoelectric properties. For the composition with x = 0.02 mol, the piezoelectric properties showed optimum values of: $d_{33}$ = 185 pC/N, $k_P$ = 41%, $T_C=325^{\circ}C$, $T_{O-T}=-4^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.723-727
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• 2011

0.935Ba$TiO_3$-0.065($Bi_{0.5}Na_{0.5}$)$TiO_3+xmol%MnO_2$ (BBNTM-x) ceramics with $0{\leq}x{\leq}0.05$ were fabricated with muffled sintering by a modified synthesis process. Their microstructure and enhanced positive temperature coefficient of resistivity (PTCR) characteristics were systematically investigated in order to obtain lead-free high TC PTCR thermistors. All specimens showed a perovskite structure with a tetragonal symmetry and no secondary phase was observed. Grain growth was achieved when the doped MnO2 was increased above 0.02 mol%. This is due to the effect of positive Mn ion doping as an acceptor compensating a Ba vacancy occurred by the higher donor dopant concentration of $Bi^{3+}$ ion. Especially, enhanced PTCR characteristics of the extremely low ${\rho}_{RT}$ of $9\;{\Omega}{\cdot}cm$, PTCR jump of $5.1{\times}10^3$, ${\alpha}$ of 15.5%/$^{\circ}C$ and high $T_C$ of $167^{\circ}C$ were achieved for the BBNTM-0.04 ceramics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.32-32
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• 2008

Microstructure and positive temperature coefficient of resistivity (PTCR) characteristics of $0.9BaTiO_3-0.1(Bi_{0.5}Na_{0.5})TiO_3$ [BaBiNT] ceramics doped with $Nb_2O_5$ were investigated in order to develop the Pb-free high Curie temperature ($T_c$)(>$160^{\circ}C$) PTC thermistor. The BaBiNT ceramics showed a tetragonal perovskite structure, irrespective of the added amount of $Nb_2O_5$. They also have a homogeneous microstructure. The resistivity of BaBiNT ceramics was gradually decreased by doping $Nb_2O_5$, which might be due to $Nb^{+5}$ ions substituting for $Ti^{+4}$ sites. The PTCR characteristics of BaBiNT ceramics appeared when the amount of doped $Nb_2O_5$ exceeded 0.0025mol%. Moreover, the abrupt grain growth was observed for the 0.03mol% $Nb_2O_5$added BaBiNT ceramics. It showed an especially high $T_c$ of approximately $172^{\circ}C$ and good PTCR characteristics of a high $\rho_{max}/\rho_{min}$ ratio ($2.96\times10^3$), a high resistivity temperature factor (11.40/$^{\circ}C$) along with a relatively low resistivity ($3.5\times10^4\Omega{\cdot}cm$).

• Advances in materials Research
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• v.5 no.3
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• pp.181-192
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• 2016

In this work effect of high energy milling on the structural and electrical properties of $Ba(Fe_{1/2}Ta_{1/2})O_3$ (BFT) ceramic synthesized using standard solid-state reaction method were investigated. X-ray diffraction studies indicated that the unit cell structure for all the samples to be hexagonal (space group: P3m1). FTIR spectra also confirmed the formation of BFT without any new phase. The milled (10 h) BFT ceramic showed the formation of small grain sizes (<$2{\mu}m$) which is beneficial for dielectric applications in high density integrated devices. Besides, the milled (10 h) BFT ceramic sample exhibited superior dielectric properties (enhancement in ${\varepsilon}^{\prime}-value$ and reduction in $tg{\delta}-value$) compared to un-milled one. Impedance analysis indicated the negative temperature coefficient of resistance (NTCR) character. The correlated barrier hopping model (jump relaxation type) is found to successfully explain the mechanism of charge transport in present ceramic samples.

• Journal of the Korean institute of surface engineering
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• v.50 no.4
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• pp.277-281
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• 2017

Ferroelectric ceramics are broadly used for various industrial applications. In this research, the lead-free ferroelectric ceramics of $(K_{0.5}Na_{0.5})NbO_3$ was fabricated by using the solid state synthesis. The $(K_{0.5}Na_{0.5})NbO_3$ pellets were sintered at 1200, 1150 and $1100^{\circ}C$ for 4 hours in air atmosphere. Field-emission scanning electron microscopy (FE-SEM) characterization of the sintered KNN ceramics revealed surface morphology and grain size. And we used the X-ray diffraction (XRD) for measuring the sample crystal phase. Temperature dependence of the dielectric constant was measured by using an LCR meter. The sintered at $1150^{\circ}C$ for 4 hours sample has a highest dielectric constant 6011 at Curie temperature ($T_C$) and dense structure with $2.33{\mu}m$ grain size.

• Korean Journal of Materials Research
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• v.25 no.7
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• pp.317-321
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• 2015

The effects of Nb doping on the crystal structure, microstructure, and dielectric ferroelectric and piezoelectric properties of $(Bi_{0.5}Na_{0.5})_{0.935}Ba_{0.065}Ti_{(1-x)}Nb_xO_3-0.01SrZrO_3$ (BNBTNb-SZ, with ${\chi}=0$, 0.01 and 0.02) ceramics have been investigated. X-ray diffraction patterns revealed that all ceramics have a pure perovskite structure with tetragonal symmetry. The grain size of the ceramics slightly decreased and a change in grain morphology from square to spherical shape was observed in the Nb-doped samples. The maximum dielectric constant temperature ($T_m$) increases with increasing amount of Nb; however, ferroelectric-relaxor transition temperature ($T_{F-R}$) and maximum dielectric constant (${\varepsilon}_m$) values decrease gradually. Nb addition disrupted the polarization hysteresis loops of the BNBT-SZ ceramics by leading a reduction in the remnant polarization coercive field and piezoelectric constant.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.105-106
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• 2006

The ferroelectric materials of the PZT, SBT attracted much attention for application to ferroelectric random access memory (FRAM) devices. Through the last decade, the lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for the ferroelectric products due to its higher remanant polarization and the ability to withstand higher coercive fields. FRAM has been currently receiving increasing attention for one of future memory devices due to its ideal memory properties such as non-volatility, high charge storage, and faster switching operations. In this study, we first applied the damascene process using chemical mechanical polishing (CMP) to the fabricate the $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitor in order to solve the problems of plasma etching such as low etching profile and ion charging. The structural characteristics were compared with specimens before and after CMP process of PZT films. The scanning electron microscopy (SEM) analysis was performed to compare the morphology surface characteristics of $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ capacitors. The densification by the vertical sidewall patterning and charging-free ferroelectric capacitor could be obtained by the damascene process without remarkable difference of the characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.870-875
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• 2011

The $(Na_{0.52}K_{0.44})(Nb_{0.9}Sb_{0.06})O_3-0.04dLiTaO_3$ (NKNS-LT) ceramics with various $Cu_2O$ concentration were prepared by the conventional solid state reaction method. The $Cu_2O$ content was varied in the range of 0.1~0.4 wt%. The effects of Cu on microstructure, crystallographic phase transition, and piezoelectric properties were investigated. The material with perovskite structure had a tetragonal phase (T1) when $Cu_2O$ concentration was less than 0.3 wt% and it transformed to another tetragonal phase (T2) when the $Cu_2O$ amount was greater than 0.3 wt%. The phase boundary between T1 and T2 phases appeared at around 0.3 wt% of $Cu_2O$ concentration. The piezoelectric properties were shown the maximum values at the composition of the phase boundary. The electro-mechanical coupling factor ($k_p$) was 0.42 and the piezoelectric charge constant ($d_{33}$) was 245 pC/N at the 0.3 wt% of $Cu_2O$ concentration.