Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2006.10a
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- Pages.105-106
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- 2006
Fabrication of $Pb(Zr,Ti)O_3$ Thin Film Capacitors by Damascene Process
Damascene 공정을 이용한 $Pb(Zr,Ti)O_3$ 캐패시터 제조 연구
- Ko, Pil-Ju (Department of Electrical Engineering, Chosun University) ;
- Lee, Woo-Sun (Department of Electrical Engineering, Chosun University)
- Published : 2006.10.27
Abstract
The ferroelectric materials of the PZT, SBT attracted much attention for application to ferroelectric random access memory (FRAM) devices. Through the last decade, the lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for the ferroelectric products due to its higher remanant polarization and the ability to withstand higher coercive fields. FRAM has been currently receiving increasing attention for one of future memory devices due to its ideal memory properties such as non-volatility, high charge storage, and faster switching operations. In this study, we first applied the damascene process using chemical mechanical polishing (CMP) to the fabricate the
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