• Journal of Navigation and Port Research
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• v.28 no.10 s.96
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• pp.881-889
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• 2004

Using the ETC Service, it is now possible to charge a vehicle for driving pass a specific toll booth electronically, without the vehicle even having to slow down. The smart card and card reader used to collect tolls electronically have a serious problem which it dose not have a standard for the ETC system. In this paper, we suggest the ETC system using mobile phone to collect tolls efficiently instead of existing system which is consist of a Interface Module to connect between a mobile phone and OEE, a mobile phone to send the information of tollgate fees and OEE to communication with RSE of roadway in the vehicle. This primary focus of this system is the IM functions and protocol to assist of the existing mobile phone and OBE.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.9
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• pp.13-21
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• 2011

In this paper, the CMOS programmable interface circuit for MEMS gyroscope is presented, and evaluated with the MEMS sensing element. The circuit includes the front-end charge amplifier with 10 bit programmable capacitor arrays, 9 bit DAC for accurate offset calibration, and 10 bit PGA for accurate gain calibration. The self oscillation loop with automatic gain control operates properly. The offset error and gain error after calibration are measured to be 0.36 %FSO and 0.19 %FSO, respectively. The noise equivalent resolution and bias instability are measured to be 0.016 deg/sec and 0.012 deg/sec, respectively. The calibration capability of this circuit can reduce the variations of the output offset and gain, and this can enhance the manufacturability and can improve the yield.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.10
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• pp.438-442
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• 2005

Si nanocrystal (Si NC) memory device has several advantages such as better retention, lower operating voltage, reduced punch-through and consequently a smaller cell area, suppressed leakage current. However, the physical and electrical reasons for this behavior are not completely understood but could be related to interface states of Si NCs. In order to find out this effect, we characterized electrical properties of Si NCs embedded in a SiO$_{2}$ layer by scanning probe microscopy (SPM). The Si NCs were generated by the laser ablation method with compressed Si powder and followed by a sharpening oxidation. In this step Si NCs are capped with a thin oxide layer with the thickness of 1$\~$2 nm for isolation and the size control. The size of 51 NCs is in the range of 10$\~$50 m and the density around 10$^{11}$/cm$^{2}$ It also affects the interface states of Si NCs, resulting in the change of electrical properties. Using a conducting tip, the charge was injected directly into each Si NC, and the image contrast change and dC/dV curve shift due to the trapped charges were monitored. The results were compared with C-V characteristics of the conventional MOS capacitor structure.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.1
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• pp.1-12
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• 1997

The acousto-optical spectrometer as a new type backend of the receiver system for radio astronomical observations is manufactured for radio signal analysis. We studied on the effect of Acousto-Optic and Acousto-Optic devices and designed the optics system. We manufactured the optical mount and the CCD detector for deflected beam and interface card. This acousto-optical spectrometer consisted of a laser, optics, acousto-optic deflector, CCD detector and Interface card. This system use He-Ne laser as a light source and use optics to get parallel beam and to focus the deflected beam. Acousto-optic deflector converts IF signal to ultrasonic wave and deflect the laser beam according to the Bragg deflection. The ultra wide band acousto-optic deflector has 1 GHz bandwidth and a total of 2,048 channel Charge Coupled Device for signal detection. In this study, we discuss the theoretical description on the effect of Acousto-optics, the design of the optics, manufacture of optical mount, CCD detector, interface card and we presented the results of experiment. As a result of measurement, we have 1,000 channels bandwidth from CCD channels.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.1-8
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• 2004

Experimental results are presented for gate oxide degradation, such as SILC and soft breakdown, and its effect on device parameters under negative and positive bias stress conditions using n-MOSFET's with 3 nm gate oxide. The degradation mechanisms are highly dependent on stress conditions. For negative gate voltage, both interface and oxide bulk traps are found to dominate the reliability of gate oxide. However, for positive gate voltage, the degradation becomes dominated mainly by interface trap. It was also found the trap generation in the gate oxide film is related to the breakage of Si-H bonds through the deuterium anneal and additional hydrogen anneal experiments. Statistical parameter variations as well as the “OFF” leakage current depend on both electron- and hole-trapping. Our results therefore show that Si or O bond breakage by tunneling electron and hole can be another origin of the investigated gate oxide degradation. This plausible physical explanation is based on both Anode-Hole Injection and Hydrogen-Released model.

• Current Photovoltaic Research
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• v.9 no.4
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• pp.145-159
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• 2021

Light soaking (LS) stability in polymer solar cells (PSCs) has always been a challenge to achieve due to unstable photoactive layer-electrode interface. Especially, the electron transport layer (ETL) and photoactive layer interface limits the LS stability of PSCs. Herein, we have modified the most commonly used and robust zinc oxide (ZnO) ETL-interface using an organic dye molecule and a co-adsorbent. Power conversion efficiencies have been slightly improved but when these PSCs were subjected to long term LS stability chamber, equipped with heat and humidity (45℃ and 85% relative humidity), an outstanding stability in the case of ZnO/dye+co-adsorbent ETL containing devices have been achieved. The enhanced LS stability occurred due to the suppressed interfacial defects and robust contact between the ZnO and photoactive layer. Current density as well as fill factors have been retained after LS with the modified ETL as compared to un-modified ETL, owing to their higher charge collection efficiencies which originated from higher electron mobilities. Moreover, the existence of less traps (as observed from light intensity-open circuit voltage measurements and dark currents at -2V) are also found to be one of the reasons for enhanced LS stability in the current study. We conclude that the mitigation ETL-surface traps using an organic dye with a co-adsorbent is an effective and robust approach to enhance the LS stability in PSCs.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.635-653
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• 1999

The present work considers work considers research strategies to address global warming. Specifically, this work considers the development of technologies of importance for the reduction of greenhouse gas emission and, especially, the materials that are critical to these technologies. It is argued that novel materials that are essential for the production of environmentally friendly energy may be developed through a special kind of engineering: interface engineering, rather than through classical bulk chemistry. Progress on the interface engineering requires to increase the present state of understanding on the local properties of materials interfaces and interfaces processes. This, consequently, requires coordinated international efforts in order to establish a strong background in the science of materials interfaces. This paper considers the impact of interfaces, such as surfaces and grain boundaries, on the functional properties of materials. This work provides evidence that interfaces exhibit outstanding properties that are not displayed by the bulk phase. It is shown that the local interface chemistry and structure and entirely different than those of the bulk phase. In consequence the transport of both charge and matter along and across interfaces, that is so important for energy conversion, is different than that in the bulk. Despite that the thickness of interfaces is of an order to a nanometer, their impact on materials properties is substantial and, in many cases, controlling. This leads to the conclusion that the development of novel materials with desired properties for specific industrial applications will be possible through controlled interface chemistry. Specifically, this will concern materials of importance for energy conversion and environmental monitoring. Therefore, there is a need to increase the present state of understanding of the local properties of materials interfaces and the relationship between interfaces and the functional properties of materials. In order to accomplish this task coordinated international efforts of specialized research centres are required. These efforts are specifically urgent regarding the development of materials of importance for the reduction of greenhouse gases. Success of research in this area depends critically on financial support that can be provided for projects on materials of importance for a sustainable environment, and these must be considered priorities for all of the global economies. The authors of the present work represent an international research group economies. The authors of the present work represent an international research group that has entered into a collaboration on the development of the materials that are critical for the reduction of greenhouse gas emissions.

• Journal of the Korean Society of Marine Environment & Safety
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• v.27 no.2
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• pp.266-274
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• 2021

Ship officers are subject to excessive job stress, which has negative physical and psychological impacts and may adversely affect the smooth supply and demand of human resources. In this study, a mobile web application was developed as a tool for systematic job stress measurement and management of officers and verified through quality evaluation. Requirement analysis was performed by ship officers and staff in charge of human resources of shipping companies, and the results were reflected in the application configuration step. The application was designed according to the waterfall model, which is a traditional software development method, and functions were implemented using JSP and Spring Framework. Performance evaluation on the user interface, confirmed that proper input and output results were implemented, and the respondent results and the database were configured in the administrator interface. The results of evaluation questionnaires for quality evaluation of the interface based on ISO/IEC 9126-2 metric were significant 4.60 for the user interface and 4.65 for the administrator interface in a 5-point scale. In the future, it is necessary to conduct follow-up research on the development of data analysis system through utilization of the collected big-data sets.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1783-1785
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• 1999

In this paper, we apply V-Q Lissajoucs' figure for observation of a V-Q (Voltage-Charge) hysteresis loop at interface between phosphor and insulation layer in P-ELDz which are a simple structure and the back lighting of LCDs (Liquid Crystal Display). In V-Q Lissajous' figure, we measured a change of hysteresis loop according to the thickness of Insulation and phosphor layer. From experiment result, we will be obtained a optimum thickness of insulation with comparing the correlation of a V-L (Voltage-Luminance) and V-Q hysteresis loop.