Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1999.07d
- /
- Pages.1783-1785
- /
- 1999
Memory Characteristic Measurement of Electroluminescent Device using V-Q Lissajous' Figure
V-Q lissajous 도형을 이용한 전계발광 소자의 메모리 특성 측정
- Jeong, D.Y. (Department of Electrical Eng., Chungbuk Nat'l University) ;
-
Lim, M.S.
(Department of Electrical Eng., Chungbuk Nat'l University)
;
- Yun, S.H. (Department of Electrical Eng., Chungbuk Nat'l University) ;
- Shin, Y.S. (Department of Electrical Eng., Chungbuk Nat'l University) ;
- Kwon, S.S. (Department of Electrical Eng., Chungbuk Nat'l University) ;
-
Lim, K.J.
(Department of Electrical Eng., Chungbuk Nat'l University)
- 정득영 (충북대학교 전기공학과) ;
-
임민수
(충북대학교 전기공학과)
;
- 윤성현 (충북대학교 전기공학과) ;
- 신유섭 (충북대학교 전기공학과) ;
- 권순석 (충북대학교 전기공학과) ;
-
임기조
(충북대학교 전기공학과)
- Published : 1999.07.19
Abstract
In this paper, we apply V-Q Lissajoucs' figure for observation of a V-Q (Voltage-Charge) hysteresis loop at interface between phosphor and insulation layer in P-ELDz which are a simple structure and the back lighting of LCDs (Liquid Crystal Display). In V-Q Lissajous' figure, we measured a change of hysteresis loop according to the thickness of Insulation and phosphor layer. From experiment result, we will be obtained a optimum thickness of insulation with comparing the correlation of a V-L (Voltage-Luminance) and V-Q hysteresis loop.
Keywords