• Korean Journal of Materials Research
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• v.6 no.4
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• pp.349-356
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• 1996

완화형 강유전체의 가장 대표적인 PMN계에서 첨가제의 종류와 함량, 측정온도, 인가 전계의형태 등의 변화에 따른 전계인가 변화특성을 광법위하게 조사하였다. Columbite precursor법에의해 분말을 준비하고 고상소결방법에 의하여 모든 시편을 제조하였다. 순수한 PMN에 첨가제로서 PbTiO3와 Pb(Zr, Ti)O3를 첨가한 경우에 완전한 perovskite 구조의 고용체가 형성되었음을 알 수 있었다. T$\varepsilon$max이상에서는 변위의 이력이 크게 발생하는 강유전체의 거동을 보여주었다. 양방향으로 전계를 인가하여 변위를 이용하면 발생 strain은 실온 근방에서 온도에 대하여 안정적이지만 단방향 전계에 따른 변위는 온도에 따라 크기가 변한다는 것을 알 수 있었고 유전상수가 큰 경우가 전왜의 크기 또한 큰 것을 알 수 있었다. 0.9MN-0.1PT와 0.8PMN-0.2PZT의 경우 최대가 되는 온도는 유전율이 최대가 되는 온도보다 더 낮은 온도에서 나타났다.

• Journal of Convergence for Information Technology
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• v.11 no.2
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• pp.10-15
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• 2021

In this paper, we formed perovskite (CH3NH3PbI3) thin films on glass with wet coating methods, and used various analytical techniques to discuss film thickness, surface roughness, crystallinity, composition, and optical property. The coated semiconductor material has no defects and is uniform, the surface roughness value is very small, and a high absorption rate has been observed in the visible light area. Next, in order to implement the hole shape in the organic-inorganic layer, Samples in the order of a metal mask with holes at regular intervals, a glass coated with a perovskite material, and a magnet were etched with atmospheric pressure plasma equipment. The shape of the hole formed in the perovskite material was analyzed by changing the time. It can be seen that more etching is performed as the time increases. The sample with the longest processing time was examined in more detail, and it was classified into 7 regions by the difference according to the location of the plasma.

• Journal of Convergence for Information Technology
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• v.11 no.6
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• pp.146-153
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• 2021

Recently, research on perovskite semiconductor materials has been performed, and the evaluation of properties using surface treatment for this material is the basis for subsequent studies. We studied the results of surface treatment of perovskite thin films exposed to air for about 6 months by generating oxygen plasma with an atmospheric pressure plasma equipment. The reason for exposure for 6 months is that the perovskite thin film is made of organic and inorganic substances, so when exposed to air, the surface changes through reaction with oxygen or water vapor. Therefore, this change is to investigate whether it is possible to restore the original film. The surface shape and the ratio of elements were analyzed by varying the process time from 1 s to 1200 s in an oxygen plasma atmosphere. It was found that the crystal grains change over a process time of 5 s or more. In order to maintain the properties of the deposited film, it is the optimal process condition between 2 s and 5 s.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.260-267
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• 1998

A homogeneous and stoichimetric fine powder of the ferroelectric $Pb_[0.97}La_{0.02}(Zr_{0.64}Sn_{0.25}Ti_{0.11})O_3$ (PLZST) has been prepared by the hydroxide coprecipitation method. Studies on the crystallization behavior of precursor as a function of temperature by X-ray powder diffraction and transmission electron microscopy technique were consistent with the formation of the pyrochlore phase from amorphous, initially at low temperatures around 500~$550^{\circ}C$. Further heat treatment up to $750^{\circ}C$ resulted in development of the perovskite phase with no significant pyrochlore crystallite growth. At intermediate temperatures the precursor yields a fine mixture of pyrochlore and perovskite phases. When the pyrochlore phase was heat teated in air, slight weight increase was observed in the temperature range of 300~$700^{\circ}C$, which is thought to be caused from oxygen absorption. In argon atmosphere, weight increase was not observed. On the other hand, weight loss began to occur near $700^{\circ}C$, with giving off mostly CO2 gas. This implies that the pyrochlore phase seems to be crystallorgraphycally and thermodynamically metastable. An apparent activation energy of 53.9 ㎉/mol was estimated for the pyrochlore-perovskite phase transformation.

• Journal of the Korean Ceramic Society
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• v.45 no.8
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• pp.453-458
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• 2008

New inorganic red pigments based on Cr-doped $Y_2O_3$ and $Al_2O_3$ were synthesized by solid state method and characterization of their pigments were characterized by using XRD, FT-IR, SEM and UV-Vis spectrophotometer. The single perovskite phase revealed at $1450^{\circ}C{\sim}1550^{\circ}C$ for 6 h due to using mineralizers. The color of pigment powders resulted out various red-shades depending on the compositions of used materials and temperatures. Glazed tiles painted with pigment powders showed red color in oxidation and reduction firing. The best red colour was obtained when the $Cr_2O_3$ was used 0.04 mole at $1450^{\circ}C$ for 6 h.

• Current Photovoltaic Research
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• v.4 no.3
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• pp.98-107
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• 2016

Third-generation photovoltaics are of low cost based on solution processes and are targeting a high efficiency. To meet the commercial demand, however, significant improvements of both efficiency and stability are required. In this sense, interfacial engineering can be useful key to solve these issues because trap sites and interfacial energy barrier and/or chemical instability at organic/organic and organic/inorganic interfaces are critical factors of efficiency and stability degradation. Here, we thoroughly review the interfacial engineering strategies applicable to three representative third-generation photovoltaics - organic, perovskite, colloidal quantum dot solar cell devices.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.71-75
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• 2023

In this study, inorganic perovskite films with different compositions were grown by thermal chemical vapor deposition depending on the substrate and their optical properties were compared. Inorganic perovskite crystals were grown on SiO₂/Si and c-Al₂O₃ substrates using CsBr and PbBr₂, respectively, under the same growth conditions. Cs₄PbBr₆-CsPbBr₃ crystallites were grown on the SiO₂ with polycrystalline structure, while a CsPbBr₃ (100) dominant thin film was formed on the c-Al₂O₃ substrate with single crystal structure. From the photoluminescence measurement, CsPbBr₃ showed typical green emission centered at 534 nm with a full width at half maximum (FWHM) of about 91 meV. The Cs₄PbBr₆-CsPbBr₃ mixed structure exhibits blue-shifted emission at 523 nm with a narrow FWHM of 63 meV and a fast decay time of 6.88 ns. These results are expected to be useful for application in photoelectric devices such as displays, solar cells, and light sensors based on inorganic metal perovskites.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.3
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• pp.106-111
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• 2018

Halide perovskite nanocrystals have become attractive for LED applications due to their high color purity and excellent luminescent properties. $CsPbX_3$ (X = I, Br, and Cl) nanocrystals were synthesized by hot-injection method and the emission wavelength was controlled by changing the composition of halide ion. Green- and red-emitting films were fabricated using a polymer binder. The outstanding optical properties of the synthesized nanocrystals and fabricated films were confirmed. The wLED designed by green- and red-emitting perovskite nanocrystal films on blue InGaN LED was characterized.

• Current Photovoltaic Research
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• v.10 no.4
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• pp.101-106
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• 2022

We prepared a CsPbI₂Br solution using Cesium iodide (CsI), Lead (II) bromide (PbBr₂) and Lead (II) iodide (PbI₂) materials into a polar solvent mixture of N,N-dimethylformamide (DMF) and Dimethyl sulfoxide (DMSO). A simple spin coating technique was used for the fabrication of CsPbI₂Br absorber layer in the solution process. In order to prepare uniform coating of absorber film we adopted a hot-air process in assocation with the spin coating. It was confirmed that the thin film manufactured by the hot-air process had a higher absorption rate than that without it, and the optical band gap was measured 1.93 eV. The thin film of absorber was uniformly prepared and revealed the Black α-Cubic crystal phase as proved through X-ray diffraction analysis. Finally, a perovskite solar cell having an n-i-p structure was manufactured with a CsPbI₂Br perovskite absorption layer. From the solar cell, we obtained a power conversion efficiency (PCE) of 5.97% in a forward measurement.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.378-381
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• 2015

To produce low cost and efficient photovoltaic cells, inorganic-organic lead halide perovskite materials appear promising for most suitable solar cells owing to their high power conversion efficiency. Most recent research showes that formamidinium lead iodide ($FAPbI_3$) with methylammonium lead bromide ($MAPbBr_3$) improves the power conversion efficiency of the solar cell to more than 18 per cent under a standard illumination because incorporated $MAPbBr_3$ makes $FAPbI_3$-relatively unstable but comparatively narrow band gap-more stable composition. In respect to first principle study, we investigated band gap of $MAPbI_3$, $FAPbI_3$, $MAPbBr_3$, $(FAPbI_3)_{0.89}-(MAPbBr_3)_{0.11}$ and 0.615(eV), 0.466, 1.197, 0.518 respectively through EDISON DFT software. These results emphasize enhancing structure stability is important factor as well as finding narrow band gap.