Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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A Growth and Characterization of CsPbBr3 Thin Film Grown by Thermal Chemical Vapor Deposition

열화학기상증착법을 이용한 CsPbBr3 박막 성장 및 특성 연구

  • Ga Eun Kim (School of Chemical Engineering, Chonnam National University) ;
  • Min Jin Kim (School of Chemical Engineering, Chonnam National University) ;
  • Hyesu Ryu (School of Chemical Engineering, Chonnam National University) ;
  • Sang Hyun Lee (School of Chemical Engineering, Chonnam National University)
  • 김가은 (전남대학교 화학공학부) ;
  • 김민진 (전남대학교 화학공학부) ;
  • 류혜수 (전남대학교 화학공학부) ;
  • 이상현 (전남대학교 화학공학부)
  • Received : 2023.06.21
  • Accepted : 2023.06.30
  • Published : 2023.06.30
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Abstract

In this study, inorganic perovskite films with different compositions were grown by thermal chemical vapor deposition depending on the substrate and their optical properties were compared. Inorganic perovskite crystals were grown on SiO2/Si and c-Al2O3 substrates using CsBr and PbBr2, respectively, under the same growth conditions. Cs4PbBr6-CsPbBr3 crystallites were grown on the SiO2 with polycrystalline structure, while a CsPbBr3 (100) dominant thin film was formed on the c-Al2O3 substrate with single crystal structure. From the photoluminescence measurement, CsPbBr3 showed typical green emission centered at 534 nm with a full width at half maximum (FWHM) of about 91 meV. The Cs4PbBr6-CsPbBr3 mixed structure exhibits blue-shifted emission at 523 nm with a narrow FWHM of 63 meV and a fast decay time of 6.88 ns. These results are expected to be useful for application in photoelectric devices such as displays, solar cells, and light sensors based on inorganic metal perovskites.

본 연구에서는 열화학기상증착법을 이용한 세슘계 무기 페로브스카이트의 성장기판에 따른 결정 구조의 변화 및 광학적 특성을 비교 분석하였다. 무기 페로브스카이트 결정은 CsBr과 PbBr2를 전구체로 사용하여 SiO2/Si와 c-Al2O3 기판 위에 동일한 조건으로 CsPbBr3를 성장하였다. 비정질 구조를 가진 SiO2 표면에서는 Cs4PbBr6-CsPbBr3 혼합상의 결정 입자가 성장하였으며, 단결정 구조인 c-Al2O3 기판에서는 CsPbBr3 (100) 결정 면방향이 우세한 단일상의 박막이 형성되었다. 광학적 분석 결과 CsPbBr3는 약 91 meV의 반치폭을 갖고 약 534 nm 중심의 발광특성을 보였으며, Cs4PbBr6-CsPbBr3 혼합구조에서는 청색 변이에 의해 523 nm의 발광 및 6.88 ns의 빠른 광 소결시간을 확인하였다. 열화학기상증착법을 이용한 페로브스카이트의 결정구조의 제어 및 광특성의 변화는 디스플레이, 태양 전지, 광센서 등 다양한 광전 소자에 적용할 수 있을 것으로 기대된다.

Keywords

Acknowledgement

본 연구는 전남대학교 학술연구비 지원에 의하여 연구되었음.

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