• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.2
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• pp.43-49
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• 2000

In this paper, the CMOS four-quadrant analog multipliers for low-voltage low-power applications ate presented. The circuit approach is based on the characteristic of the LV(Low-Voltage) composite transistor which is one of the useful analog building blocks. SPICE simulations are carried out to examine the performances of the designed multipliers. Simulation results are obtained by 0.6${\mu}{\textrm}{m}$ CMOS parameters with 2V power supply. The LV composite transistor can easily be extended to perform a four-quadrant multiplication. The multiplier has a linear input range up to $\pm$0.5V with a linearity error of less than 1%. The measured -3㏈ bandwidth is 290MHz and the power dissipation is 373㎼. The proposed multiplier is expected to be suitable for analog signal processing applications such as portable communication equipment, radio receivers, and hand-held movie cameras.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.12
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• pp.31-38
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• 2010

This paper presents the design of a graphic memory for QVGA-scale LCD Driver IC (LDI). The graphic memory is designed based on the pseudo-SHAM for the purpose of small area, and the memory cell structure is designed using a bit line partitioning method to improve sensing characteristics and drivabilties in the line-read operation. Also, a collision protection circuit using C-gate is designed to control collisions between read/write operations and self-refresh/line-read operations effectively. The graphic memory circuit has been designed in transistor level using $0.18{\mu}m$ CMOS technology library and the operations of the graphic memory have been verified using Hspice. The results show that the bit-bitb line voltage difference, ${\Delta}V$ increases by 40%, the charge sharing time between bit and bitb voltages $T_{CHGSH}$ decreases by 30%, and the current during line-read decreases by 40%.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.1
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• pp.1-7
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• 2007

An MTJ element not only computes Boolean function but also stores the output result in itself. We can make the most use of magneto-logic's merits by employing the magneto-logic in substitution for the sequential logic as well as the combinational logic. This unique feature opens a new horizon for potential application of MTJ as a universal logic element. Magneto-logic circuits using MTJ elements are more integrative and non-volatile. This paper presents novel 3-bit magneto-logic up/down counters and presents simulation results based on the HSPICE macro-model of MTJ that we have developed.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.12
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• pp.1345-1352
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• 2014

Bus architecture of SoC has been replaced by NoC in recent years. Noc uses the multi-clock domains to transmit and receive data between neighbor network interfaces and they have same frequency, but a phase difference because of clock skew. So a synchronizer is used for a mesochronous frequency in interconnection between network interfaces. In this paper the metastability is defined and analyzed in a D latch and a D flip-flop to search the possibilities that data can be lost in the process of sending and receiving data between interconnects when a local frequency and a transmitted frequency have a phase difference. 180nm CMOS model parameter and 1GHz are used to simulate them in HSpice. The simulation results show that the metastability happens in a latch and a flip-flop when input data change near the clock edges and there are intermediate states for a longer time as input data change closer at the clock edge. And the next stage can lose input data depending on environmental conditions such as temperature, processing variations, power supply, etc. The simulation results are very useful to design a mescochronous synchronizer for NoC.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.8A
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• pp.1259-1264
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• 1999

In this paper, the High-speed, Low-power Analog-Digital Conversion Archecture is porposed using the Pipelined archecture for High-speed conversion rate and the Successive-Approximation archecture for Low-power consumption. This archecture is the Successive-Approximation archecture using Pipelined Comparator array to change reference voltage during Holding Time. The Analog-to-Digital Converter for video processing is designed using 0.8${\mu}{\textrm}{m}$ CMOS tchnology. When an 6-bit 10MS/s Analog-to-Digital Converter is simulatined, the INL/DNL errors are $\pm$0.5/$\pm$1, respectively. The SNR is 37dB at a sampling rate of 10MHz with 100KHz sine input signal. The power consumption is 1.46mW at 10MS/s. When an 8-bit 10MS/s Analog-to Digital Converter is simulatined, the INL/DNL errors are $\pm$0.5/$\pm$1, respectively. The SNR is 41dB at a sampling rate of 100MHz with 100KHz sine input signal. The power consumption is 4.14m W at 10MS/s.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.48 no.10
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• pp.1317-1326
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• 1999

As the integration ratio and operation speed increase, it has become an important problem to estimate the dissipated power during the design procedure as a method to reduce the TTM(time to market). This paper proposed a prediction model to estimate the maximum dissipated power of a CMOS logic gate. This model uses a calculational method. It was formed by including the characteristics of MOSFETs of which a CMOS gate consists, the operational characteristics of the gate, and the characteristics of the input signals. As the modeling process, a maximum power estimation model for CMOS inverter was formed first, and then a conversion model to convert a multiple input CMOS gate into a corresponding CMOS inverter was proposed. Finally, the power model for inverter was applied to the converted result so that the model could be applied to a general CMOS gate. For experiment, several CMOS gates were designed in layout level by $0.6{\mu}m$ layout design rule. The result by comparing the calculated results with those from HSPICE simulations for the gates showed that the gate conversion model has within 5% of the relative error rate to the SPICE and the maximum power estimation model has within 10% of the relative error rate. Thus, the proposed models have sufficient accuracies. Also in calculation time, the proposed models was more than 30 times faster than SPICE simulation. Consequently, it can be said that the proposed model could be used efficiently to estimate the maximum dissipated power of a CMOS logic gate during the design procedure.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.12
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• pp.20-26
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• 1999

A CMOS 6-bit 100MSPS ADC for DBS receiver is designed. The proposed ADC is composed of folding block, latch block, and digital block. The cascode interpolating block and kickback reduced latch are proposed with a high speed architecture. To verify the performance of ADC, simulations are carried out by HSPICE. The ADC achieves a clock frequency of 100MHz with a power dissipation of 40mW for 3 V supply voltage. The active chip area is $1500{\mu}m{\times}1000{\mu}m$with $0.65{\mu}m$ 2-poly 2-metal CMOS process. Further, INL and DNL are within ${\pm}0.6LSB$, ${\pm}0.5LSB$, respectively. SNDR is about 33dB at 10MHz input frequency.

• Journal of the Institute of Convergence Signal Processing
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• v.9 no.1
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• pp.54-61
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• 2008

This paper presents a new TIQ based CMOS flash 6-bit ADC to process digital signal in real time. In order to improve the conversion speed of ADC by designing new logic or layout of ADC circuits, a new design method is proposed in encoding logic circuits. The proposed encoding circuits convert analog input into digitally encoded double base number system(DBNS), which uses two bases unlike the normal binary representation scheme. The DBNS adopts binary and ternary radix to enhance digital arithmetic processing capability. In the DBNS, the addition and multiplication can be processed with just shift operations only. Finding near canonical representation is the most important work in general DBNS. But the main disadvantage of DBNS representation in ADC is the fan-in problem. Thus, an equal distribution algorithm is developed to solve the fan-in problem after assignment the prime numbers first. The conversion speed of simulation result was 1.6 GSPS, at 1.8V power with the Magna $0.18{\mu}m$ CMOS process, and the maximum power consumption was 38.71mW.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.2
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• pp.273-280
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• 2017

As massive integration technology of transistors has been developing, multi-core circuit is fabricated on a silicon chip and a clock frequency is getting faster to meet the system requirement. But increasing the clock frequency can induce some problems to violate the operation of system such as clock synchronization, so it is very import to avoid metastability events to design digital chips. In this paper, metastability windows are measured by bisection method in H-spice depending on temperature, supply voltage, and the size of transmission gate with D-FF designed with 180nm CMOS process. The simulation results show that the metastability window(: MW) is slightly increasing to temperature and supply voltage, but is quadratic to the area of a transmission gate, and the best area ration of P and Ntransitor in transmission gate is P/N=4/2 to get the least MW.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.4
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• pp.917-922
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• 2010

In this paper, a new temperature-insensitive CMOS dual-mode current reference for low-voltage low-power mixed-mode circuits is proposed. The temperature independent reference current is generated by summing a proportional to absolute temperature(PTAT) current and a complementary to absolute temperature(CTAT) current. The temperature insensitivity was achieved by the mobility and the other which is inversely proportional to mobility. As the results, the temperature dependency of output currents was measured to be $0.38{\mu}A/^{\circ}C$ and $0.39{\mu}A/^{\circ}C$, respectively. And also, the power dissipation is 0.84mW on 2V voltage supply. These results are verified by the $0.18{\mu}m$ n-well CMOS parameter.