• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.7
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• pp.57-65
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• 2002

In this paper, a 2.5V 10-bit 300MSPS CMOS D/A Converter is described. The architecture of the D/A Converter is based on a current steering 8+2 segmented type, which reduces non-linearity error and other secondary effects. In order to achieve a high performance D/A Converter, a novel current cell with a low spurious deglitchnig circuit and a novel inverse thermomeer decoder are proposed. To verify the performance, it is integrated with $0.25{\mu}m$ CMOS 1-poly 5-metal technology. The effective chip area is $1.56mm^2$ and power consumption is about 84mW at 2.5V power supply. The simulation and experimental results show that the glitch energy is 0.9pVsec at fs=100MHz, 15pVsec at fs=300MHz in worst case, respectively. Further, both of INL and DNL are within ${\pm}$1.5LSB, and the SFDR is about 45dB when sampling, frequency, is 300MHz and output frequency is 1MHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.187-191
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• 2007

This paper describes a 3.3V 10 bit CMOS digital-to-analog converter with a divided architecture of a 7 MSB and a 3 LSB, which uses an optimal Thermal-to-Binary Decoding method with monotonicity, glitch energy. The output stage utilizes here implements a return-to-zero circuit to obtain the dynamic performance. Most of D/A converters in decoding circuit is complicated, occupies a large chip area. For these problems, this paper describes a D/A converter using an optimal Thermal-to-Binary Decoding method. the designed D/A converter using the CMOS n-well $0.35{\mu}m$ process0. The experimental data shows that the rise/fall time, settling time, and INL/DNL are 1.90ns/2.0ns, 12.79ns, and a less than ${\pm}2.5/{\pm}0.7$ LSB, respectively. The power dissipation of the D/A converter with a single power supply of 3.3V is about 250mW.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.37-44
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• 2011

This paper presents the method of improving the data rate and BER in the inductive coupling link using a BPM signaling method. A complementary switching transmitter is used to remove invalid glitches at transmitted data, and the concept of pre-distortion is introduced to optimize received data. Also, an integrating receiver is used to increase the sampling margin and equalizing transistors are added in the pre-charge path of the integrator and comparator for high frequency operation. The transceiver designed with a 0.13 um CMOS technology operates at 2.4 Gb/s and consumes 5.99 mW from 1.2 V power supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.1
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• pp.55-68
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• 2001

This paper presents a new ALU architecture to minimize glitching power consumption which is appeared in the conventional one with P(carry propagation)/G(carry generation) blocks. In general, A lot of glitches generated once are propagating into the next stage of circuits to make unnecessary power dissipation. Therefore, a new ALU architecture which removes the glitches at the output of P/G blocks is presented in this paper. If a lot of glitches at the output of P/G blocks are removed, then the signal transitions caused by glitches are reduced in the sum generation block and hence power consumption is also reduced. A latch is inserted into the conventional P/G blocks to remove the glitches at the output of P/G blocks. Latch enable signal can make a role in eliminating a lot of glitches at the P/G's outputs by controlling output enable time. Experimental results from HSPICE simulations with implementing 16-b ALU show 28% reduction in glitching power consumption with negligible delay penalty.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.4
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• pp.691-698
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• 2008

This paper describes a 3.3V 10 bit CMOS digital-to-analog converter with a divided architecture of a 7 MSB and a 3 LSB, which uses an optimal Thermal-to-Binary Decoding method with monotonicity, glitch energy. The output stage utilizes here implements a return-to-zero circuit to obtain the dynamic performance. Most of D/A converters in decoding circuit is complicated, occupies a large chip area. For these problems, this paper describes a D/A converter using an optimal Thermal-to-Binary Decoding method. the designed D/A converter using the CMOS n-well $0.35{\mu}m$ process0. The experimental data shows that the rise/fall time, settling time, and INL/DNL are 1.90ns/2.0ns, 12.79ns, and a less than ${\pm}2.5/{\pm}0.7\;LSB$, respectively. The power dissipation of the D/A converter with a single power supply of 3.3V is about 250mW.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.10
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• pp.2359-2368
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• 2013

In this paper, an IRD (internal read data) circuit preventing the reentry into the read mode while keeping the read-out DOUT datum at power-up even if noise such as glitches occurs at signal ports such as an input signal port RD (read) when a power IC is on, is proposed. Also, a pulsed WL (word line) driving method is used to prevent a DC current of several tens of micro amperes from flowing into the read transistor of a differential paired eFuse OTP cell. Thus, reliability is secured by preventing non-blown eFuse links from being blown by the EM (electro-migration). Furthermore, a compared output between a programmed datum and a read-out datum is outputted to the PFb (pass fail bar) pin while performing a sensing margin test with a variable pull-up load in consideration of resistance variation of a programmed eFuse in the program-verify-read mode. The layout size of the 8-bit eFuse OTP IP with a $0.18{\mu}m$ process is $189.625{\mu}m{\times}138.850{\mu}m(=0.0263mm^2)$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.15-22
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• 2006

In this paper, 1.8V 8-bit 500MSPS Low-power CMOS Digital-to-Analog Converter(DAC) for UWB(Ultra Wide Band) Communication Systeme is proposed. The architecture of the DAC is based on a current steering 6+2 full matrix type which has low glitch and high linearity. In order to achieve a high speed and good performance, a current cell with a high output impedance and wide swing output range is designed. Further a thermometer decoder with same delay time and low-power switching decoder for high efficiency performance are proposed. The proposed DAC was implemented with TSMC 0.18um 1-poly 6-metal N-well CMOS technology. The measured SFDR was 49dB when the output frequency was 50MHz at 500MS/s sampling frequency. The measured INL and DNL were 0.9LSB and 0.3LSB respectively. The DAC power dissipation was 20mW and the effective chip area was $0.63mm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.1-9
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• 2009

In this paper, a small area 12-bit 300MSPS CMOS Digital-to-Analog Converter(DAC) is proposed for display systems. The architecture of the DAC is based on a current steering 6+6 segmented type, which reduces non-linearity error and other secondary effects. In order to improve the linearity and glitch noise, an analog current cell using monitoring bias circuit is designed. For the purpose of reducing chip area and power dissipation, furthermore, a noble self-clocked switching logic is proposed. To verify the performance, it is fabricated with $0.13{\mu}m$ thick-gate 1-poly 6-metal N-well Samsung CMOS technology. The effective chip area is $0.26mm^2$ ($510{\mu}m{\times}510{\mu}m$) with 100mW power consumption. The measured INL (Integrated Non Linearity) and DNL (Differential Non Linearity) are within ${\pm}3LSB$ and ${\pm}1LSB$, respectively. The measured SFDR is about 70dB, when the input frequency is 15MHz at 300MHz clock frequency.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.48-57
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• 2006

This work describes a 12b 200KHz 0.52mA $0.47mm^2$ algorithmic ADC for sensor applications such as motor controls, 3-phase power controls, and CMOS image sensors simultaneously requiring ultra-low power and small size. The proposed ADC is based on the conventional algorithmic architecture with recycling techniques to optimize sampling rate, resolution, chip area, and power consumption. The input SHA with eight input channels for high integration employs a folded-cascode architecture to achieve a required DC gain and a sufficient phase margin. A signal insensitive 3-D fully symmetrical layout with critical signal lines shielded reduces the capacitor and device mismatch of the MDAC. The improved switched bias power-reduction techniques reduce the power consumption of analog amplifiers. Current and voltage references are integrated on the chip with optional off-chip voltage references for low glitch noise. The employed down-sampling clock signal selects the sampling rate of 200KS/s or 10KS/s with a reduced power depending on applications. The prototype ADC in a 0.18um n-well 1P6M CMOS technology demonstrates the measured DNL and INL within 0.76LSB and 2.47LSB. The ADC shows a maximum SNDR and SFDR of 55dB and 70dB at all sampling frequencies up to 200KS/s, respectively. The active die area is $0.47mm^2$ and the chip consumes 0.94mW at 200KS/s and 0.63mW at 10KS/s at a 1.8V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.3
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• pp.75-85
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• 2009

This work proposes a 13b 100MS/s 0.13um CMOS ADC for 3G communication systems such as two-carrier W-CDMA applications simultaneously requiring high resolution, low power, and small size at high speed. The proposed ADC employs a four-step pipeline architecture to optimize power consumption and chip area at the target resolution and sampling rate. Area-efficient high-speed high-resolution gate-bootstrapping circuits are implemented at the sampling switches of the input SHA to maintain signal linearity over the Nyquist rate even at a 1.0V supply operation. The cascode compensation technique on a low-impedance path implemented in the two-stage amplifiers of the SHA and MDAC simultaneously achieves the required operation speed and phase margin with more reduced power consumption than the Miller compensation technique. Low-glitch dynamic latches in sub-ranging flash ADCs reduce kickback-noise referred to the differential input stage of the comparator by isolating the input stage from output nodes to improve system accuracy. The proposed low-noise current and voltage references based on triple negative T.C. circuits are employed on chip with optional off-chip reference voltages. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates the measured DNL and INL within 0.70LSB and 1.79LSB, respectively. The ADC shows a maximum SNDR of 64.5dB and a maximum SFDR of 78.0dB at 100MS/s, respectively. The ABC with an active die area of $1.22mm^2$ consumes 42.0mW at 100MS/s and a 1.2V supply, corresponding to a FOM of 0.31pJ/conv-step.