• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.37-40
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• 1999

For the first time, charge trapping nonvolatile semiconductor memories with the deoxidized oxynitride gate dielectric is proposed and demonstrated. Gate dielectric wit thickness of less than 1 nm have been grown by postnitridation of pregrown thermal silicon oxides in NO ambient and then reoxidation. The nitrogen distribution and chemical state due to NO anneal/reoxidation were investigated by M-SIMS, TOF-SIMS, AES depth profiles. When the NO anneal oxynitride film was reoxidized on the nitride film, the nitrogen at initial oxide interface not only moved toward initial oxide interface, but also diffused through the newly formed tunnel oxide by exchange for oxygen. The results of reoxidized oxynitride(ONO) film analysis exhibits that it is made up of SiO$_2$(blocking oxide)/N-rich SiON interface/Si-rich SiON(nitrogen diffused tunnel oxide)/Si substrate. In addition, the SiON and the S1$_2$NO Phase is distributed mainly near the tunnel oxide, and SiN phase is distributed mainly at tunnel oxide/Si substrate interface.

• 전기전자학회논문지
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• 제25권2호
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• pp.350-355
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• 2021

IGBT는 MOSFET과 BJT의 구조를 동시에 포함하고 있는 전력반도체 소자이며, MOSFET의 빠른 스위칭 속도와 BJT의 고 내압, 높은 전류내량 특성을 갖고 있다. GBT는 높은 항복전압, 낮은 V_CE-SAT, 빠른 스위칭 속도, 고 신뢰성의 이상적인 파워 반도체 소자의 요구사항을 목표로 하는 소자이다. 본 논문에서는 1,200V 급 Trench Gate Field Stop IGBT의 상단 공정 파라미터인 Gate oxide thickness, Trench Gate Width, P+ Emitter width를 변화시키면서 변화하는 Eoff, V_CE-SAT을 분석하였고, 이에 따른 최적의 상단 공정 파라미터를 제시하였다. Synopsys T-CAD Simulator를 통해 항복전압 1,470V와 V_CE-SAT 2.17V, Eon 0.361mJ, Eoff 1.152mJ의 전기적 특성을 갖는 IGBT 소자를 구현하였다.

• 전기전자학회논문지
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• 제26권3호
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• pp.500-505
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• 2022

본 연구에서는 새로운 구조의 dual gate tri-layer split channel 박막트랜지스터를 제작하였다. 전류 구동 능력을 향상시키기 위해 액티브 층의 양쪽에 게이트를 형성하였고 전하이동도를 증가시키기 위하여 액티브 층에서 채널이 형성되는 구간인 첫번째 층과 세번째 층에 전도성이 높은 ITO 층을 배치하였다. 추가적으로 분할 채널을 이용하여 채널의 series 저항을 낮추면서 분할한 채널의 측면에서도 accumulation을 유도하여 전하이동도를 향상시켰다. 기존의 single gate a-ITGZO 박막트랜지스터가 15 cm²/Vs의 전하이동도를 가지는 반면 dual gate tri-layer split channel 박막트랜지스터는 134 cm²/Vs의 높은 전하이동도를 가졌다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1530-1533
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• 2005

We investigated under-gate type carbon nanotube field emitter arrays (FEAs) for back light unit (BLU) in liquid crystal display (LCD). Gate oxide was formed by wet etching of ITO coated glass substrate instead of depositing $SiO_2$ on the glass substrate. Wet etching is easer and simpler than depositing and etching of thick gate oxide to isolate the gate metal from cathode electrode in triode. Field emission characteristic s of triode structure were measured. The maximum current density of 92.5 ${\mu}A/cm^2$ was when the gate and anode voltage was 95 and 2500 V, respectively at the anode-cathode spacing of 1500 ${\mu}m$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.389-389
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• 2010

In this paper, an investigation of the benefits of gate oxide for 8" the manufacturing of Trench MOSFETs and its impact on device performance is presented. Layout dimensions of trench power MOSFETs have been continuously reduced in order to decrease the specific on-resistance, maintaining equal vertical dimensions. We discuss experimental results for devices with a pitch size down fabricated with an unconventional gate trench topology and a simplified manufacturing scheme. The fabricated Trench MOSFETs are observed the trench gate oxidation by SEM.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.243-246
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• 1999

We studied the MOSFET characteristics and the hot-carrier reliability with the sidewall spacer composition and the post gate oxidation thickness in 0.20${\mu}{\textrm}{m}$ gate length transistor. The MOSFET with NO(Nitride＋Oxide) sidewall spacer exhibits the large degradation of hot-carrier lifetime because there is no buffering oxide against nitride stress. When the post gate oxidation is skipped, the hot-carrier lifetime is improved, but GIDL (Gate Induced Drain Leakage) current is also increased.

• 전자공학회논문지A
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• 제28A권9호
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• pp.736-742
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• 1991

N$^{+}$poly gate NMOSFETs and p$^{+}$ poly gate (surface type) PMOSFETs with three different gate oxides(SiO2, NO, and ONO) were fabricated. The rapid thermal nitridation and reoxidation techniques have been applied to gate oxide formation. The current drivability of the ONO NMOSFET shows larger values than that of the SiO2 NMOSFET. The snap-back occurs at a lower drain voltage for SiO$_2$ cases for ONO NMOSFET. Under the maximum substrate current bias conditions, hot-carrier effects inducting threshold voltage shift and transconductance degradation were investigated. The results indicate that ONO films exhibit less degradation in terms of threshold voltage shift. It was confirmed that the ONO samples achieve good improvement of hot-carrier immunity. In a SiO$_2$ SC-PMOSFET, with significant boron penetration, it becomes a depletion type (normally-on). But ONO films show excellent impurity barrier properties to boron penetration from the gate.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1292-1294
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• 1993

This paper proposes a new structure of polycrystalline silicon(poly-Si) thin film transistor(TFT) having a thick gate-oxide below the gate edge. The new structure is fabricated by the gate re-oxidation in wet ambient. It is shown that the thick gate-oxide below the gate edge is effective in reducing the leakage current and the gate-drain overlap capacitance. We have simulated this device by using the SSUPREM4 process simulator and the SPISCES-2B device simulator. As a simulation result it is found that the new structure provides a low tentage current less than 0.2 pA and achieves a on/off ratio as high as $5{\times}10^7$.

• 전기전자학회논문지
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• 제15권2호
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• pp.143-148
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• 2011

MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1063-1066
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• 2009

In this study, we fabricated pentacene organic thin film trasistors(OTFTs) which used aluminum oxide as the gate insulator. Aluminum oxide for OTFTs was deposited on glass substrate with a different deposition rate by E-beam evaporation. In case of the deposition rate of $0.1\;{\AA}$, the fabricated aluminum oxide gate insulating OTFT showed a threshold voltage of -1.36 V, an on/off current ratio of $1.9{\times}10^3$ and field effect mobility $0.023\;cm^2/V_s$.