Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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A Study on Switching Characteristics of 1,200V Trench Gate Field stop IGBT Process Variables

1,200V 급 Trench Gate Field stop IGBT 공정변수에 따른 스위칭 특성 연구

  • Jo, Chang Hyeon (Dept. of Energy IT Engineering, Far East University) ;
  • Kim, Dea Hee (Dept. of Energy IT Engineering, Far East University) ;
  • Ahn, Byoung Sup (Dept. of Energy IT Engineering, Far East University) ;
  • Kang, Ey Goo (Dept. of Energy IT Engineering, Far East University)
  • Received : 2021.05.17
  • Accepted : 2021.06.25
  • Published : 2021.06.30
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Abstract

IGBT is a power semiconductor device that contains both MOSFET and BJT structures, and it has fast switching speed of MOSFET, high breakdown voltage and high current of BJT characteristics. IGBT is a device that targets the requirements of an ideal power semiconductor device with high breakdown voltage, low VCE-SAT, fast switching speed and high reliability. In this paper, we analyzed Gate oxide thickness, Trench Gate Width, and P+Emitter width, which are the top process parameters of 1,200V Trench Gate Field Stop IGBT, and suggested the optimized top process parameters. Using the Synopsys T-CAD Simulator, we designed IGBT devices with electrical characteristics that has breakdown voltage of 1,470 V, VCE-SAT 2.17 V, Eon 0.361 mJ and Eoff 1.152 mJ.

IGBT는 MOSFET과 BJT의 구조를 동시에 포함하고 있는 전력반도체 소자이며, MOSFET의 빠른 스위칭 속도와 BJT의 고 내압, 높은 전류내량 특성을 갖고 있다. GBT는 높은 항복전압, 낮은 VCE-SAT, 빠른 스위칭 속도, 고 신뢰성의 이상적인 파워 반도체 소자의 요구사항을 목표로 하는 소자이다. 본 논문에서는 1,200V 급 Trench Gate Field Stop IGBT의 상단 공정 파라미터인 Gate oxide thickness, Trench Gate Width, P+ Emitter width를 변화시키면서 변화하는 Eoff, VCE-SAT을 분석하였고, 이에 따른 최적의 상단 공정 파라미터를 제시하였다. Synopsys T-CAD Simulator를 통해 항복전압 1,470V와 VCE-SAT 2.17V, Eon 0.361mJ, Eoff 1.152mJ의 전기적 특성을 갖는 IGBT 소자를 구현하였다.

Keywords

Acknowledgement

This work was supported by the Korea Institute of Energy Technology Evaluation and Planning(KETEP) and the Ministry of Trade, Industry & Energy(MOTIE) of the Republic of Korea (No. 20194010201810, No. 20194010000050). This research was supported by the MOTIE (Ministry of Trade, Industry, and Energy) in Korea, under the Fostering Global Talents for Innovative Growth Program (P0017308) supervised by the Korea Institute for Advancement of Technology (KIAT)

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