Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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MOSFET Characteristics and Hot-Carrier Reliability with Sidewall Spacer and Post Gate Oxidation

Sidewall Spacer와 Post Gate Oxidation에 따른 MOSFET 특성 및 Hot Carrier 신뢰성 연구

  • 이상희 (현대전자산업주식회사 선행기술연구소) ;
  • 장성근 (현대전자산업주식회사 선행기술연구소) ;
  • 이선길 (현대전자산업주식회사 선행기술연구소) ;
  • 김선순 (현대전자산업주식회사 선행기술연구소) ;
  • 최준기 (현대전자산업주식회사 선행기술연구소) ;
  • 김용해 (현대전자산업주식회사 선행기술연구소) ;
  • 한대희 (현대전자산업주식회사 선행기술연구소) ;
  • 김형덕 (현대전자산업주식회사 선행기술연구소)
  • Published : 1999.06.01
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Abstract

We studied the MOSFET characteristics and the hot-carrier reliability with the sidewall spacer composition and the post gate oxidation thickness in 0.20${\mu}{\textrm}{m}$ gate length transistor. The MOSFET with NO(Nitride＋Oxide) sidewall spacer exhibits the large degradation of hot-carrier lifetime because there is no buffering oxide against nitride stress. When the post gate oxidation is skipped, the hot-carrier lifetime is improved, but GIDL (Gate Induced Drain Leakage) current is also increased.

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