• Proceedings of the KIEE Conference
• /
• 1994.11a
• /
• pp.156-158
• /
• 1994

In recent days, the various adjustable speed drives are widely employed at the industrial applications for the purpose of energy saving and speed control. In particular, for the machine control applications. the switching frequency is required to be increased for better dynamic performance of the drive. Moreover, this also leads to the reduction of the switching loss of the device. For IGBT (Insulated Gate Bipolar Transistor), the most widely used switching device in the inverters below the 100[kW] range, the falling and falling time is of the order about $200{\sim}300[ns]$. Therefore unexpected phenomena occurs such as voltage spikes due to high gradient of current at the switching instant, the weakening of motor insulation due to high gradient of voltage. In this paper, a new voltage gradient suppression technique is presented in both theoretically and experimentally.

• Proceedings of the KIEE Conference
• /
• 1994.11a
• /
• pp.178-180
• /
• 1994

In recent days, the inverter is widely used at the industrial applications. In the range lower than 100[kW], IGBT(Insulated Gate Bipolar Transistor) is most widely used as the switching device. In that case of IGBT, the rising time and the filling time are very short(about $200[ns]{\sim}300[ns]$). Especially for motor control applications, the switching frequency is required to be increased for better dynamic performance of the drive. However, the higher switching frequency leads to the unexpected problem occurs such as voltage spike due to stray inductance in the bus at switching instant. In this paper, a new methodology for reducing the stray inductance existing in the bus that induces the voltage spike will be presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.273-277
• /
• 1999

A cold cathode flourescent lamp for the backlight in the notebook computer requires high input voltage about 1300(V) when it turns on. But once a discharge starts, the input voltage can be dropped by about one-third for continued output. The equivalent impedance also varies from open to several dozens of kilo-ohms. The piezoelectric transformer converts electrical energy into mechanical energy and then converts it back to electrical energy at a high voltage. Its high output voltage, high efficiency and small size are suitable for driving the LCD backlight in the notebook computer. The piezoelectric transformer operates near the resonance frequency and the output waveform is close to sine wave with very little noise. This paper suggests an inverter for LCD backlight of notebook computer using piezoelectric transformer that includes voltage to frequency converter for gate signal which is useful for tracking of variable resonance frequency depending on load impedance.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.6
• /
• pp.245-248
• /
• 2011

The scaling down of metal oxide semiconductor field-effect transistors (MOSFETs) for the last several years has contributed to the reduction of the scaling variables and device parameters as well as the operating voltage of the MOSFET. At the same time, the variation in the electrical characteristics of MOSFETs is one of the major issues that need to be solved. Especially because the issue with variation is magnified as the drive voltage is decreased. Therefore, this paper will focus on the variations between electrical characteristics and drain voltage. In order to do this, the test patterned multi-finger MOSFETs using 90-nm process is used to investigate the characteristic variations, such as the threshold voltage, DIBL, subthreshold swing, transconductance and mobility via parasitic resistance extraction method. These characteristics can be analyzed by varying the gate width and length, and the number of fingers. Through this modeling scheme, the characteristic variations of multi-finger MOSFETs can be analyzed.

• Prospectives of Industrial Chemistry
• /
• v.23 no.2
• /
• pp.1-11
• /
• 2020

In this report, we summarize recent progress in the development of electrolyte-gated transistors (EGTs) for various printed electronics. EGTs, employing a high capacitance electrolyte as gate dielectric layer in transistors, exhibits increasing of drive current, lowering operation voltage, and new transistor architectures. While the use of electrolytes in electronics goes back to the early days of silicon transistors, the new printable, fast-responsive polymer electrolytes are expanding their range of applications from printable and flexible digital circuits to various neuromorphic devices. This report introduces the structure and operating mechanism of EGT and reviews key developments in electrolyte materials used in printed electronics. Additionally, we will look at various applications with EGTs that are currently underway.

• Proceedings of the KIPE Conference
• /
• 2020.08a
• /
• pp.221-223
• /
• 2020

반도체 기반 고전압 펄스 발생장치에 적용 가능한 고전압 스위치는 주로 수 kV 정격의 반도체 스위치를 직렬로 스태킹하여 구성되며, 이때 각 스위치 소자에는 절연과 동기화된 각각의 게이트 신호가 인가되어야 한다. 본 논문에서는 짧은 펄스 폭의 온, 오프 게이트 펄스와, 단일 턴의 고전압 전선을 일차측으로 갖는 게이트 변압기를 통해 직렬로 구성된 반도체 스위치 스택 기반의 펄스 모듈레이터에 적용 가능한 간단한 구조의 게이트 구동회로가 설계되었다. 각 스위치에 게이트 신호를 전달하기 위해 온, 오프 게이트 펄스를 사용함으로써 게이트 변압기의 포화를 방지할 수 있으며, 이때 각 스위치의 게이트 턴-온, 오프 전압은 변압기 이차측의 제너 다이오드와 스토리지 커패시터를 통해 유지된다. Pspice 시뮬레이션을 통해 12개의 IGBT를 직렬로 구성하여 설계된 구조의 게이트 회로를 적용, 최대 10kV 펄스 출력 조건에서 안정적인 동작을 확인하고 설계를 검증하였으며 1200V 급 IGBT를 사용하여 실제 스위치 스택과 게이트 구동회로 모듈을 1리터 이내의 부피로 고밀도화하여 제작하였다.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
• /
• v.8 no.7
• /
• pp.475-484
• /
• 2018

The propulsion control device of an electric railway vehicle is a key main component corresponding to an engine of an automobile, and a device for controlling this is a device called a GDU (Gate Drive Unit). Also, when the frequency of failure of the propulsion control system was analyzed, the nonconformity ratio of GDU was the highest. GDU was not able to access core technologies due to the introduction of foreign products, and there were general problems with overall maintenance activities due to discontinuation of GDU of the manufacturer. The GDU has reached the end of its life with 23 to 14 years of long-term use.In order to solve these problems, this study was designed to identify the proper life span by analyzing compatible GDU's acquisition and failure, and to improve the existing system of maintenance focusing on health inspection. Maintenance of the components with a short life span compared to the entire service life is essential. Most foreign parts introduced at the beginning of the construction are not replaced due to technical problems or long-term operation. However, due to the characteristics of railway vehicles with a long life span of more than 25 years, it is necessary to maintain them for a long period of time. The study should be more concrete and empirical. The replacement type GDU of capacitors was able to easily measure the life of the capacitance by removing the capacitor modules, measure the life span of each unit test, and accurately perform preventive maintenance of the capacitor.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.5
• /
• pp.615-624
• /
• 2014

In this paper, we explore the electrical properties and high-frequency performance of carbon nanotube field-effect transistors (CNTFETs), based on the non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. The calculated results show that CNTFETs exhibit superior performance compared with graphene nanoribbon field-effect transistors (GNRFETs), such as better control ability of the gate on the channel, higher drive current with lower subthreshold leakage current, and lower subthreshold-swing (SS). Due to larger band-structure-limited velocity in CNTFETs, ballistic CNTFETs present better high-frequency performance limit than that of Si MOSFETs. The parameter effects of CNTFETs are also investigated. In addition, to enhance the immunity against short - channel effects (SCE), hetero - material - gate CNTFETs (HMG-CNTFETs) have been proposed, and we present a detailed numerical simulation to analyze the performances of scaling down, and conclude that HMG-CNTFETs can meet the ITRS'10 requirements better than CNTs.

• Journal of Internet of Things and Convergence
• /
• v.6 no.1
• /
• pp.97-102
• /
• 2020

Multi-Channel Switch ICs for IoT have integrated several solid state structure low ON-resistance bi-directional relay MOS switches with level shifter to drive high voltage and they should be independently controlled by external serialized logic control. These devices are designed for using in applications requiring high-voltage switching control by low-voltage control signals, such as medical ultra-sound imaging, ink-jet printer control, bare board open/short and leakage test system using Kelvin 4-terminal measurement method. This paper describes implementation of analog switch control block and its verification using Field programmable Gate Array (FPGA) test pattern generation. Each block has been implemented using Verilog hardware description language then simulated by Modelsim and prototyped in a FPGA board. Compare to conventional IC, The proposed architecture can be applied to fields where multiple entities need to be controlled simultaneously in the IoT environment and the proposed pattern generation method can be applied to test similar types of ICs.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.60-60
• /
• 2003

디자인 룰에 의해 Gate Length 가 100nm 이하로 줄어듦에 따라 Gate delay 감소와 Switch speed 향상을 위해 보다 더 큰 drive current 를 요구하게 되었다. 본 연구는 dirve current 를 증가시키기 위해 고안된 Strained Si substrate 를 만들기 위한 SiGe layer 성장에 관한 연구이다. SiGe layer를 성장시킬 때 SiH$_4$ gas와 GeH$_4$ gas를 furnace에 flow시켜 Chemical 반응에 의해 Si Substrate를 성장시키는 LPCVD(low pressure chemical vapor depositio)법을 사용하였고 SIMS와 nanospec을 이용하여 박막 두께 및 Ge concentration을 측정하였고, AFM으로 surface의 roughness를 측정하였다. 본 연구에서 우리는 10,20,30,40%의 Ge concentration을 갖는 10nm 이하의 SiGe layer를 얻기 위하여 l0nm 이하의 fixed 된 두께로 SiGe layer를 성장시킬 때 temperature, GeH$_4$ gas pre-flow, SiH$_4$ 와 GeH$_4$의 gas ratio를 변화시켜 성장시킨 후 Ge 의 concentration과 실제 형성된 두께를 측정하였고, SiGe의 mole fraction의 변화에 따른 surface의 roughness 를 측정하였다. 그 결과 10 nm의 두께에서 temperature, GeH$_4$ gas pre-flow, SiH$_4$ 와 GeH$_4$ 의 gas ratio의 변화와 Ge concentration 과의 의존성을 확인 할 수 있었고, SiGe 의 mole traction이 증가하였을 때 surfcace의 roughness 가 증가함을 알 수 있었다. 이 연구 결과는 strained Si 가 가지고 있는 strained Si 내에서 n-FET 와 P-FET사이의 불균형에 대한 해결과 좀 더 발전된 형태인 fully Depleted Strained Si 제작에 기여할 것으로 보인다.