JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Quantum Transport Simulations of CNTFETs: Performance Assessment and Comparison Study with GNRFETs

  • Wang, Wei (College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications) ;
  • Wang, Huan (College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications) ;
  • Wang, Xueying (College of Telecommunications and information Engineering, Nanjing University of Posts and Telecommunications) ;
  • Li, Na (College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications) ;
  • Zhu, Changru (College of Telecommunications and information Engineering, Nanjing University of Posts and Telecommunications) ;
  • Xiao, Guangran (College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications) ;
  • Yang, Xiao (College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications) ;
  • Zhang, Lu (College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications) ;
  • Zhang, Ting (College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications)
  • Received : 2013.11.07
  • Accepted : 2014.08.03
  • Published : 2014.10.30
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Abstract

In this paper, we explore the electrical properties and high-frequency performance of carbon nanotube field-effect transistors (CNTFETs), based on the non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. The calculated results show that CNTFETs exhibit superior performance compared with graphene nanoribbon field-effect transistors (GNRFETs), such as better control ability of the gate on the channel, higher drive current with lower subthreshold leakage current, and lower subthreshold-swing (SS). Due to larger band-structure-limited velocity in CNTFETs, ballistic CNTFETs present better high-frequency performance limit than that of Si MOSFETs. The parameter effects of CNTFETs are also investigated. In addition, to enhance the immunity against short - channel effects (SCE), hetero - material - gate CNTFETs (HMG-CNTFETs) have been proposed, and we present a detailed numerical simulation to analyze the performances of scaling down, and conclude that HMG-CNTFETs can meet the ITRS'10 requirements better than CNTs.

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