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http://dx.doi.org/10.5573/JSTS.2014.14.5.615

Quantum Transport Simulations of CNTFETs: Performance Assessment and Comparison Study with GNRFETs  

Wang, Wei (College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications)
Wang, Huan (College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications)
Wang, Xueying (College of Telecommunications and information Engineering, Nanjing University of Posts and Telecommunications)
Li, Na (College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications)
Zhu, Changru (College of Telecommunications and information Engineering, Nanjing University of Posts and Telecommunications)
Xiao, Guangran (College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications)
Yang, Xiao (College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications)
Zhang, Lu (College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications)
Zhang, Ting (College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.14, no.5, 2014 , pp. 615-624 More about this Journal
Abstract
In this paper, we explore the electrical properties and high-frequency performance of carbon nanotube field-effect transistors (CNTFETs), based on the non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. The calculated results show that CNTFETs exhibit superior performance compared with graphene nanoribbon field-effect transistors (GNRFETs), such as better control ability of the gate on the channel, higher drive current with lower subthreshold leakage current, and lower subthreshold-swing (SS). Due to larger band-structure-limited velocity in CNTFETs, ballistic CNTFETs present better high-frequency performance limit than that of Si MOSFETs. The parameter effects of CNTFETs are also investigated. In addition, to enhance the immunity against short - channel effects (SCE), hetero - material - gate CNTFETs (HMG-CNTFETs) have been proposed, and we present a detailed numerical simulation to analyze the performances of scaling down, and conclude that HMG-CNTFETs can meet the ITRS'10 requirements better than CNTs.
Keywords
CNTFETs; GNRFETs; HMG-CNTFETs; Non-equilibrium Green's function;
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