• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.61-62
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• 2009

This paper describes the characteristics of lightning impulse current of ZnO block for transmission line arrester with external gap. The ageing parameters of lightning arresters ate impulse current, moisture ingress, temperature ageing and so on. Especially it is important to estimate the change of electrical characteristics by impulse current. Total energy applied to the ZnO arrester each time is $4/10{\mu}s$, 30kA and $2/20{\mu}s$, 10kA impulse current. Before and After the test, the residual voltage variation of varistors passed was below 5%. According to the test, it is thought that the ZnO arrester shows good stability with impulse current test.

• 한국전기전자재료학회논문지
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• 제30권1호
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• pp.37-41
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• 2017

In this paper, the fault current limiting characteristics of the flux-lock type SFCL (superconducting fault current limiter) using magnetic application circuit were analyzed. The flux-lock type SFCL has the structure to install the magnetic application circuit, which can increase the resistance of HTSC ($high-T_C$ superconducting element comprising) the SFCL. To analyze the fault current limiting effect of the flux-lock type SFCL through the magnetic flux application circuit, the flux-lock type SFCL either with the magnetic flux circuit or without the magnetic flux circuit was constructed and the fault current limiting characteristics of the SFCL were compared each other through the short-circuit tests.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.428-431
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• 2003

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $113.4{\AA}$ and $814{\AA}$, which have the gate area 10-3cm2. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.90-93
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• 1996

The conduction mechanisms of the off-current in low temperature ($\leq$600$^{\circ}C$) processed polycrystalline silicon thin film transistors (LTP poly-Si TFT's) has been systematically studied. Especially, the temperature and bias dependence of the off-current between unpassivated and passivated poly-Si TFT's was investigated and compared. The off-current of unpassivated poly-Si TFT's is due to a resistive current at low gate and drain voltage, thermal emission current at high gate, low drain voltage, and field enhanced thermal emission current in the depletion region near the drain at high gate and drain voltage. After hydrogenation, it was observed that the off-currents were remarkably reduced by plasma-hydrogenation. It was also observed that the off-currents of the passivated poly-Si TFT's are more critically dependent on temperature rather than electric field.

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1045-1053
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• 2002

This paper describes characteristics of the developed current sensor by means of two identically wound magnetic cores forming a clamp like for measurement of a low DC, or AC current. This sensor consists of peak value detectors, a sensor of an electrically compensated current transformer type, a reference alternating voltage, Precision measuring circuits to measure the output signals of sensor with harmonics, and can be measured up to 2 A at DC, or AC current. The current sensor shows a measurement accuracy of less than 0.3% in the frequency range 40 Hz - 10 HBz. The resolution and sensitivity of the sensor were evaluated 0.1 mA and 10 mV/mA, respectively.

• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.112-115
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• 2011

To stabilize the electric characteristic of Silicon Thin Film Transistor, reducing the current leakage is most important issue. To reduce the current leakage, many ideas were suggested. But the increase of mask layer also increased the cost. On this research Bird's Beak process was use to present element. Using Silvaco simulator, it was proven that it was able to reduce current leakage without mask layer. As a result, it was possible to suggest the structure that can reduce the current leakage to 1.39nA without having mask layer increase. Also, I was able to lead the result that electric characteristic (on/off current ratio) was improved compare from conventional structure.

• Journal of Information Display
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• 제6권4호
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• pp.11-15
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• 2005

We propose a current mode logic circuit design method for LTPS TFT for enhancing circuit operating speed. Current mode inverter/buffers with passive resistive load had been designed and fabricated. Measurement results indicated that the smaller logic swing of the current mode allowed significantly faster operation than the static CMOS. In order to reduce the chip size, both all pTFT and all nTFT active load current mode inverter/buffer had been designed and analyzed by HSPICE simulation. Even though the active load current mode circuits were inferior to the passive load circuits, it was superior to static CMOS gates.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.67-70
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• 2000

In this paper, all SCR recombination currents including setback and graded layer's recombination currents are analytically introduced for the first time. Different emitter-base structures are tested to prove the validity of the model. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. In this paper, recombination current model included setback layer and graded layer is proposed. New recombination current model also includes abrupt heterojunction's recombination current model. In this paper, new recombination current model analytically explains effects of setback layer and graded layer.

• Transactions on Electrical and Electronic Materials
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• 제3권1호
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• pp.38-41
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• 2002

We have investigated current-voltage-luminance characteristics of organic light-emitting diodes based on TPD/Alq$_3$organics depending on the application of forward-backward bias voltage. Luminance-voltage characteristics and luminous efficiency were measured at the same time when the current-voltage characteristics were measured. We have observed that the current-voltage characteristics shows a reversible current maxima at low voltage, which is possibly not related to the emission from Alq$_3$. Current-voltage-luminance characteristics imply that the conduction luminance mechanism at low voltage is different from that of high voltage one.

• Journal of Power Electronics
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• 제4권2호
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• pp.87-95
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• 2004

A new fast-response high-current clamp DC-DC converter circuit design is presented that will meet the requirements and features of the new generation of microprocessors and digital systems. The clamp in the proposed converter amplifies the current in case of severe load changes and is able to produce high slew rate of output current and capability to keep constant the output voltage. This proposed high-current clamp technique is theoretically loss less, low cost and easy to implement with simple control scheme. This is modified from a basic buck topology by replacing the output inductor with two magnetically coupled inductors. Inductors are difference in inductance, one has large inductance and other has small inductance. The inductor with small inductance will take over the output inductor during fast load transient. It speedup the output current slew rate and reduce the output voltage drop in the case of heavy burden load changes.