• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.7-11
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• 2006

The changes of the electrical conductivity in chalcogenide amorphous semiconductors, $Ge_{1}Se_{1}Te_{2}$, have been studied. A phase change random access memory (PRAM) device without an access transistor is successfully fabricated with the $Ge_{1}Se_{1}Te_{2}$-phase-change resistor, which has much higher electrical resistivity than $Ge_{2}Sb_{2}Te_{5}$ and its electric resistivity can be varied by the factor of $10^5$ times, relating with the degree of crystallization. 100 nm thick $Ge_{1}Se_{1}Te_{2}$ thin film was formed by vacuum deposition at $1.5{\times}10^{-5}$ Torr. The static mode switching (DC test) is tested for the $100\;{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device. In the first sweep, the amorphous $Ge_{1}Se_{1}Te_{2}$ thin film showed a high resistance state at low voltage region. However, when it reached to the threshold voltage, $V_{th}$, the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The pulsed mode switching of the $20{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device showed that the reset of device was done with a 80 ns-8.6 V pulse and the set of device was done with a 200 ns-4.3 V pulse.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.294-298
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• 2002

Polycrystalline $La_{2.1}Sr_{1.9}Mn_3O_{10}$ with layered perovskite structure have been successfully synthesized and investigated with respect to their thermoelectric, electric and magnetic properties. The large magnetoresistance (MR) effect with $-{\Delta}{\rho}/{\rho}_0$ of ∼120% at 0.85T was observed in a wide temperature range below a cusp temperature in resistivity of about 120K, which is well below the magnetic $T_C$. At high temperature, a singnificant difference between the activation energy deduced from the electrical resistivity and thermoelectric power, a characteristic of small polaron, is observed. All of the experimental data can be well explained on the basis of the small polaron model.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.759-764
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• 2012

Copper Pillar Tin Bump (CPTB) was investigated for high density chip interconnect technology development, which was prepared by electroplating and electro-less plating methods. Copper pillar tin bumps that have $100{\mu}m$ pitch were introduced with fabrication process using a KM-1250 dry film photoresist (DFR), with copper electroplating for Copper Pillar Bump (CPB) formation firstly, and then tin electro-less plating on it for control oxidation. Electric resistivity and mechanical shear strength measurements were introduced to characterize the oxidation effects and bonding process as a function of thermo-compression. Electrical resistivity increased with increasing oxidation thickness, and shear strength had maximum value with $330^{\circ}C$ and 500 N at thermo-compression process. Through the simulation work, it was proved that the CPTB decreased in its size of conduction area as time passes, however it was largely affected by the copper oxidation.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.1
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• pp.49-53
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• 2000

Sodium borate silicate glass of composition $10Na_2O-39B_2O_3-50SiO_2-CoO$ and $20Na_2O-14B_2O_3-65SiO_2-CoO$ were prepared by melting oxide mixtures in alumina crucible at $1210^{\circ}C$ in an electric furance in air for 2h, and then quenching in air. The dielectric behavior of the quenched glasses are the subject of the present work. Properties such as dielectric constant and resistivity as a function frequency and temperature are reported. From the dielectric spectra, the glass phase transition temperature has been found to decrease at a rate $Na_2O$ 20 mol% and the dielectric constants increase with increasing $Na_2O$ content. The frequency dependent resistivity response of glass exhibits a non-Debye type relaxation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.2
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• pp.92-97
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• 1999

The mechanical and electrical properties of the hot-pressed and annealed $\beta-Sic$+39vol.%$ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of $Al_2O_3+Y_2O_3(6:4wt%)$. In this microstructures, no reactions and elongated $\alpha$-SiC grains with equiaxed $ZrB_2$, gains were observed between $\beta-SiC$ and $ZrB_2$, and the relative density was over 97.6% of the theoretical density. Phase analysis of the composites by XRD revealedmostly of $\alpha$-SiC(6H, 4H), $ZrB_2$, and weakly $\beta-SiC$(15R) phase. The fracture toughness decreased with increasing $Al_2O_3+Y_2O_3$ contents and showed the highest of $6.37MPa.m^{\fraction ane-half}$ for composite added with 4wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity increased with increasing $Al_2O_3+Y_2O_3$contents and showed the lowest of $1.51\times10^{-4}\Omega.cm$ for composite added with $Al_2O_3+Y_2O_3$ additives at $25^{\circ}C$. This reason is the increasing tendency of pore formation according to amount of liquid forming additives $Al_2O_3+Y_2O_3$. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) against temperature up to $700^{\circ}C$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.10a
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• pp.726-729
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• 2010

Copper Pillar Tin Bump (CPTB) was investigated for high density chip interconnect technology development, which was prepared by electroplating and electro-less plating methods. Copper pillar tin bumps that have $100{\mu}m$ pitch were introduced with fabrication process using a KM-1250 dry film photoresist (DFR), with copper electroplating for Copper Pillar Bump (CPB) formation firstly, and then tin electro-less plating on it for control oxidation. Electric resistivity and mechanical shear strength measurements were introduced to characterize the oxidation effects and bonding process as a function of thermo-compression. Electrical resistivity increased with increasing oxidation thickness, and shear strength had maximum value with $330^{\circ}C$ and 500 N thermo-compression process. Through the simulation work, it was proved that when the CPTB decreased in its size, it was largely affected by the copper oxidation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.169-173
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• 2005

Ni oxide thin films were formed through annealing treatment in the atmosphere after Ni thin films deposited by a r.f. magnetron sputtering method and then electric and material properties were analyzed for application to thermal sensors. Resistivity of Ni thin films decreased after annealing treatment at 30$0^{\circ}C$ and 40$0^{\circ}C$ for five hours due to crystallization of Ni thin films but the value increased over 45$0^{\circ}C$ because of Ni thin film's oxidation. Resistivity values of Ni thin films were in the range of 10.5 $\mu$Ωcm/$^{\circ}C$ to 2.84${\times}$10$^4$$\mu$Ωcm/$^{\circ}C$ according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation such as 2,188 ppm/$^{\circ}C$ to 5,630 ppm/$^{\circ}C$ in the temperature range of 0 $^{\circ}C$∼150 $^{\circ}C$. The results demonstrate that Ni oxide thin films of annealing treatment at 40$0^{\circ}C$ for 5hours could be more advantageous than pure Ni thin films and Pt thin films from a point of output properties and TCR, applied to thermal sensors.

• Journal of Powder Materials
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• v.25 no.2
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• pp.144-150
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• 2018

$Al_2O_3-SiC$ ceramic composites are produced using pressureless sintering, and their plasma resistance, electrical resistance, and mechanical properties are evaluated to confirm their applicability as electrostatic-discharge-safe components for semiconductor devices. Through the addition of Mg and Y nitrate sintering aids, it is confirmed that even if SiC content exceeded 10%, complete densification is possible by pressureless sintering. By the uniform distribution of SiC, the total grain growth is suppressed to about $1{\mu}m$; thus an $Al_2O_3-SiC$ sintered body with a high strength over 600 MPa is obtained. The optimum amount of SiC to satisfy all the desired properties of electrostatic-discharge-safe ceramic components is obtained by finding the correlation between the plasma resistance and the electrical resistivity as a function of SiC amount.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.92-97
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta$-SiC+39vol. %ZrB2 electroconductive ceramic composites were investigated by adding 1, 2, 3wt% Al2O3+Y2O3(6:4wt%) of the liquid forming additives. In this microstructures, no reactions were observed between $\beta-SiC$ and ZrB2. The relative density is over 90.8% of the theoretical density and the porosity decreased with increasing Al2O3+Y2O3 contents. Phase analysis of the composites by XRD revealed $\alpha-SiC(6H, 4H)$, ZrB2 and $\beta-SiC$(15R). Flexural srength showed the highest of 315.5MPa for composites added with 3wt% Al2O3+Y2O3 additives as room temperature. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 5.5MPa.m1/2 and 5.3MPa.m1/2 for composites added with 2wt% and 3wt% Al2O3+Y2O3 additives respectively at room temperature. The area fraction of the elongated SiC grain in the etched surface of sample showed 65% and 65.1% for composite added with 2wt% and 3wt% Al2O3+Y2O3 additives respectively. The electrical resistivity at room temperature. The electrical resistivity of the composites wall all positive temperature coefficient(PTCR) against temperature up to $700^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.4
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• pp.141-146
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• 2002

The mechanical and electrical properties of the pressureless sintered SiC-TiB$_2$electroconductive ceramic composites were investigated as functions of the transition metal of TiB$_2$. The result of phase analysis for the SiC-TiB$_2$ composites by XRD revealed $\alpha$-SiC(6H), TiB$_2$, and YAG(Al$_{5}$Y$_3$O$_{12}$) crystal phases. The relative density showed the lowest 84.8% for the SiC-TiB$_2$composites added with 39vol.%TiB$_2$. Owing to crack deflection, crack bridging and YAG of fracture toughness mechanism, the fracture toughness showed the highest value of 7.8 MPa.m$^{1}$2/ for composites added with 39vol.%TiB$_2$under a pressureless annealing at room temperature. The electrical resistivity of the SiC-27vol.%TiB$_2$ composites was negative temperature coefficient resistance(NTCR), and the electrical resistivity of the besides SiC-27vol.%TiB$_2$composites was all positive temperature coefficient resistance(PCTR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.EX>.