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http://dx.doi.org/10.4313/JKEM.2005.18.2.169

Formation of Ni Oxide Thin Film and Analysis of Its Characteristics for Thermal Sensors  

Lee, Eung-Ahn (대양전기공업(주) 연구소 센서시스템팀)
Seo, Jeong-Hwan (대양전기공업(주) 연구소 센서시스템팀)
Noh, Sang-Soo (대양전기공업(주) 연구소 센서시스템팀)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.2, 2005 , pp. 169-173 More about this Journal
Abstract
Ni oxide thin films were formed through annealing treatment in the atmosphere after Ni thin films deposited by a r.f. magnetron sputtering method and then electric and material properties were analyzed for application to thermal sensors. Resistivity of Ni thin films decreased after annealing treatment at 30$0^{\circ}C$ and 40$0^{\circ}C$ for five hours due to crystallization of Ni thin films but the value increased over 45$0^{\circ}C$ because of Ni thin film's oxidation. Resistivity values of Ni thin films were in the range of 10.5 $\mu$Ωcm/$^{\circ}C$ to 2.84${\times}$10$^4$$\mu$Ωcm/$^{\circ}C$ according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation such as 2,188 ppm/$^{\circ}C$ to 5,630 ppm/$^{\circ}C$ in the temperature range of 0 $^{\circ}C$∼150 $^{\circ}C$. The results demonstrate that Ni oxide thin films of annealing treatment at 40$0^{\circ}C$ for 5hours could be more advantageous than pure Ni thin films and Pt thin films from a point of output properties and TCR, applied to thermal sensors.
Keywords
Ni oxide; Ni thin film; R.F. magnetron sputtering; TCR; Thermal sensor;
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