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H. B. Chung and C. Y. Park, 'Electrical characteristics of the thin film interface of amorphous chalcogenide semiconductor', J. of KIEE, Vol. 29, p. Ill, 1979
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H. Y. Lee, S. H. Park, J. Y. Chun, and H. B. Chung, 'Photo-induced transformation in amorphous thin films by XeCL excimer laser exposure', J. Appl. Phys., Vol. 83, No. 10, p. 5381, 1998
DOI
ScienceOn
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J. M. Lee, S. J. Yang, K. Shin, and H. B. Chung, 'The study on the characteristics of phase transition in differential thickness of , thin film', Trans. EEM, Vol. 5, No.6, p. 241, 2004
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4 |
G. Wicker, 'Nonvolatile, high density, high performance phase change memory', SPIE, Vol. 3891, p. 2,1999
DOI
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5 |
S. Lai and T. Lowrey, 'OUM - A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications', Intel Corporation, RN3-01, p. 804, 2001
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6 |
M. Gill, T. Lowrey, and J. Park, 'Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications', IEEE ISSCC 2002 Dig. Tech. Pap., Vol. 1, p. 202, 2002
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7 |
J.-H. Park, J.-I. Park, E.-S. Kim, and H.-B. Chung, 'Holographic grating formation by wet etching of amorphous thin film', Jpn, J. Appl. Phys., Vol. 41, No.5, p. 4271. 2002
DOI
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G. Wicker, 'A comprehensive model of submicron chalcogenide switching devices', Ph. D. Dissertation Wayne State University, Detroit, MI 1996
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9 |
S. Tyson, S. Hudgens, B. Pashmakov, and W. Czubatyj, 'Total dose radiation response and high temperature imprint characteristics of chalcogenide based RAM resistor elements', IEEE Transactions on nuclear science, Vol. 47, No.6, p. 2528, 2000
DOI
ScienceOn
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N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, 'Rapid-phase transitions of GeTe- pseudo-binary amorphous thin films for an optical disk memory', J. App. Phys., Vol. 69, No.5, p. 2849,1991
DOI
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11 |
M. Gill, T. Lowrey, and J. Park, 'Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications', IEEE ISSCC 2002 Dig. Tech. Pap., Vol. 2, p. 158,2002
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