• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.16 no.12 s.117
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• pp.1272-1278
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• 2006

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin(Au/Sn) eutectic solder bonding. The membrane chip has $2.5mm{\times}2.5mm$, 0.5${\mu}m$ thick low stress silicon nitride membrane, $2mm{\times}2mm$ Au/Ni/Cr membrane electrode, and 3${\mu}m$ thick Au/Sn layer. The backplate chip has $2mm{\times}2mm$, 150${\mu}m$ thick single crystal silicon rigid backplate, $1.8mm{\times}1.8mm$ backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50{\sim}60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is 39.8 ${\mu}V/Pa$(-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.53-58
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• 2008

In this study, we fabricated embedded IC (Double Pole Double throw switch chip) polymer substrate and evaluate it for 2.4 GHz WiFi application. The switch chips were laminated using FR4 and ABF(Ajinomoto build up film) as dielectric layer. The embedded DPDT chip substrate were interconnected by laser via and Cu pattern plating process. DSC(Differenntial Scanning Calorimetry) analysis and SEM image was employed to calculate the amount of curing and examine surface roughness for optimization of chip embedding process. ABF showed maximum peel strength with Cu layer when the procuring was $80\sim90%$ completed and DPDT chip was laminated in a polymer substrate without void. An embedded chip substrate and wire-bonded chip on substrate were designed and fabricated. The characteristics of two modules were measured by s-parameters (S11; return loss and S21; insertion loss). Insertion loss is less than 0.55 dB in two presented embedded chip board and wire-bonded chip board. Return loss of an embedded chip board is better than 25 dB up to 6 GHz frequency range, whereas return loss of wire-bonding chip board is worse than 20 dB above 2.4 GHz frequency.

• Journal of Sensor Science and Technology
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• v.10 no.2
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• pp.91-100
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• 2001

A $8{\times}8$ foveated (log-polar) retina chip for edge detection has been designed and fabricated using CMOS technology. Retina chip performs photo-input sensing, edge extraction and motion detection and we focused edge extraction. The pixel distribution follows the log-polar transform having more resolution in the center than in the periphery and can reduce image information selectively. This kind of structure has been already employed in simple image sensors for normal cameras, but never in edge detection retina chip. A scaling mechanism is needed due to the different pixel size from circumference to circumference. A mechanism for current scaling in this research is channel width scaling of MOS transistor. The designed chip has been fabricated using standard $1.5{\mu}m$ single-poly double-metal CMOS technology.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.11
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• pp.924-927
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• 2017

This paper presents a 6~18 GHz 8-bit true time delay (TTD) circuit. The unit delay circuit is based on m-derived filter with relatively constant group delay. The designed 8-bit TTD is implemented with two single-pole double-throw (SPDT) switches and seven double- pole double-throw (DPDT) switches. The reflection characteristics are improved by using inductors. The designed 8-bit TTD was fabricated using $0.18{\mu}m$ CMOS. The measured delay control range was 250 ps with 1 ps of delay resolution. The measured RMS group delay error was less than 11 ps at 6~18 GHz. The measured input/output return losses are better than 10 dB. The chip consumes zero power at 1.8 V supply. The chip size is $2.36{\times}1.04mm^2$.

• ETRI Journal
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• v.20 no.1
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• pp.37-45
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• 1998

Reduced surface field lateral double-diffused MOS transistor for the driving circuits of plasma display panel and field emission display in the 120V region have been integrated for the first time into a low-voltage $1.2{\mu}m$ analog CMOS process using p-type bulk silicon. This method of integration provides an excellent way of achieving both high power and low voltage functions on the same chip; it reduces the number of mask layers double-diffused MOS transistor with a drift length of $6.0{\mu}m$ and a breakdown voltage greater than 150V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffused MOS in $4.8m{\Omega}{\cdot}cm^2$ at a gate voltage of 5V.

• Journal of Sensor Science and Technology
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• v.11 no.2
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• pp.84-92
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• 2002

A $32{\times}32$ pixels foveated (linear-polar) structure retina chip with the function of local-light adaptation for edge detection has been designed and fabricated using CMOS technology. Human retina can detect a wide range of light intensity. In this study, we use the biologically-inspired visual signal processing mechanism that consists of photoreceptors, horizontal cells, and bipolar cells in order to implement the function of edge detection in the retina chip. For a local-light adaptive function, the size of receptive field is changed locally according to the input light intensity. The spatial distribution of sensing pixels in the foveated retina chip has the advantages of selective reduction of image data and good resolution in central part to carry out the elaborate image processing with still enough resolution in the outer parts. The designed chip has been fabricated using standard $0.6\;{\mu}m$ double-poly triple-metal CMOS technology and optimized using HSPICE simulator.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.4 no.4
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• pp.264-271
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• 2011

ILS(Instrument Landing System) is the international standard system for approach and landing guidance. ILS was adopted by ICAO(International Civil Aviation Organization) in 1947 and is currently being used in commercial systems. To design the digital transmitter and receiver modules that can be mounted in the integrated ILS, we propose the digital design methods of digital double AM modulator and demodulator using FPGA chip, DDS(Direct Digital Synthesizer) for generation of sampling clock, demodulator of DDC(Digital Down Converter) structure, and spectrum analyzer using DSP chip. We demonstrate the efficiency of the proposed design method through experiments using developed transmitter and receiver modules. This system can be used as a high-performance commercial system.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.44-50
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• 1985

This paper describes the design and fabrication of an integrated circuit which controls the phase of VTR servo systems. The integrated circuit was designed using 6#m design rule and its chip size is 3.6$\times$3.55mm$^2$. On the other hand it was fabricated using SBC, analog-compatible 12 L and double layer metal fabrication process technology. As a result, we succeeded in fabrication of If which satisfied D. C. characteristics and phase control function.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.2
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• pp.293-298
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• 2009

In this contribution, a 193-bit elliptic curve cryptography coprocessor was implemented on an FPGA board. Optimized algorithms and numerical expressions which had been verified through C program simulation, should be analyzed again with HDL (hardware description language) such as Verilog, so that the verified ones could be modified to be applied directly to hardware implementation. The reason is that the characteristics of C programming language design is intrinsically different from the hardware design structure. The hardware IP which was double-checked in view of hardware structure together with algoritunic verification, was implemented on the Altera CycloneII FPGA device equipped with ARM9 microprocessor core, to a real chip prototype, using Altera embedded system development tool kit. The implemented finite field calculation IPs can be used as library modules as Elliptic Curve Cryptography finite field operations which has more than 193 bit key length.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.9
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• pp.251-258
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• 2012

Recently, NAND Flash memory structure is evolving from SDR (Single Data Rate) to high speed DDR(Double Data Rate) to fulfill the high performance requirement of SSD and SSS. Accordingly, the proper ways of transferring data that latches valid data stably and minimizing data skew between pins by using PHY(Physical layer) circuit techniques have became new issues. Also, rapid growth of speed in NAND flash increases the operating frequency and power consumption of NAND flash controller. Internal voltage variation margin of NAND flash controller will be narrowed through the smaller geometry and lower internal operating voltage below 1.5V. Therefore, the increase of power budge deviation limits the normal operation range of internal circuit. Affection of OCV(On Chip Variation) deteriorates the voltage variation problem and thus causes internal logic errors. In this case, it is too hard to debug, because it is not functional faults. In this paper, we propose new architecture that maintains the valid timing window in cost effective way under sudden power fluctuation cases. Simulation results show that the proposed technique minimizes the data skew by 379% with reduced area by 20% compared to using PHY circuits.